Extreme Short-Channel Effect on RTS and Inverse Scaling Behavior: Source-Drain Implantation Effect in 25-nm nand Flash Memory von Taehoon Kim, Franklin, N., Srinivasan, C., Kalavade, P., Goda, A.

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Scanning Electron Microscopy of Nanoscale Chemical Patterns von Srinivasan, Charan, Mullen, Thomas J., Hohman, J. Nathan, Anderson, Mary E., Dameron, Arrelaine A., Andrews, Anne M., Dickey, Elizabeth C., Horn, Mark W., Weiss, Paul S.

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Self-Assembled Multilayers of Transition-Metal−Terpyridinyl Complexes; Formation, and Characterization von Kosbar, Laura, Srinivasan, Charan, Afzali, Ali, Graham, Teresita, Copel, Matt, Krusin-Elbaum, Lia

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Sub- 30 - nm patterning on quartz for imprint lithography templates von Srinivasan, Charan, Hohman, J. Nathan, Anderson, Mary E., Weiss, Paul S., Horn, Mark W.

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Microcontact insertion printing von Mullen, Thomas J., Srinivasan, Charan, Hohman, J. Nathan, Gillmor, Susan D., Shuster, Mitchell J., Horn, Mark W., Andrews, Anne M., Weiss, Paul S.

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Reliability improvements for memory technologies von Bshara, Nafea, Srinivasan, Charan

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Combining Conventional Lithography with Molecular Self-Assembly for Chemical Patterning von Anderson, M. E., Srinivasan, C., Hohman, J. N., Carter, E. M., Horn, M. W., Weiss, P. S.

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Combining electrochemical desorption and metal deposition on patterned self-assembled monolayers von Mullen, Thomas J., Zhang, Pengpeng, Srinivasan, Charan, Horn, Mark W., Weiss, Paul S.

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Hybrid approaches to nanometer-scale patterning: Exploiting tailored intermolecular interactions von Mullen, Thomas J., Srinivasan, Charan, Shuster, Mitchell J., Horn, Mark W., Andrews, Anne M., Weiss, Paul S.

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Identifying a failing group of memory cells in a multi-plane storage operation von Srinivasan, Charan, Gurgi, Eyal

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Recovering from Addressing Fault in a Non-Volatile Memory von Srinivasan, Charan, Gurgi, Eyal

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IDENTIFYING A FAILING GROUP OF MEMORY CELLS IN A MULTI-PLANE STORAGE OPERATION von Srinivasan, Charan, Gurgi, Eyal

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DATA STORAGE IN A MULTI-LEVEL MEMORY DEVICE USING ONE-PASS PROGRAMMING von Gurgi Eyal, Srinivasan Charan

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One-pass programming in a multi-level nonvolatile memory device with improved write amplification von Gurgi Eyal, Srinivasan Charan

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DATA STORAGE IN A MULTI-LEVEL MEMORY DEVICE USING ONE-PASS PROGRAMMING von Gurgi Eyal, Srinivasan Charan

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Electrically isolated nanostructures fabricated using self-assembled multilayers and a novel negative-tone bi-layer resist stack von Srinivasan, Charan, Anderson, Mary E., Jayaraman, R., Weiss, Paul S., Horn, Mark W.

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Early prediction of failure in programming a nonvolatile memory von Gurgi Eyal, Srinivasan Charan

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Detection and localization of failures in 3D NAND flash memory von Gurgi Eyal, Srinivasan Charan

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PROGRAMMING MEMORIES WITH MULTI-LEVEL PASS SIGNAL von KALAVADE, Pranav, SRINIVASAN, Charan, PARAT, Krishna K, RAGHUNATHAN, Shyam Sunder

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Relaxing verification conditions in memory programming and erasure operations von SRINIVASAN CHARAN, GURGI EYAL

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