Demonstration of 4H-SiC Digital Integrated Circuits Above 800 °C von Neudeck, Philip G., Spry, David J., Liangyu Chen, Prokop, Norman F., Krasowski, Michael J.

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Direct Tertiary Butyl Alcohol Formation via Catalytic Liquid Phase Isobutane Oxidation with Molecular Oxygen von Maiti, Swarup K., Snavely, Kirk, Ramanathan, Anand, Dakka, Jihad, Nandi, Partha, Spry, David B., Subramaniam, Bala

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Towards Making SiC ICs Durable and Accessible for Use in the Most Extreme Environments (Including Venus) von Neudeck, Philip G., Spry, David J.

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Prolonged 500 °C Demonstration of 4H-SiC JFET ICs With Two-Level Interconnect von Spry, David J., Neudeck, Philip G., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.

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Early Burn-In Parasitic Conduction in 500 °C Durable SiC JFET ICs von Spry, David J., Lukco, Dorothy, Neudeck, Philip G., Chen, Liang Yu

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Optimization of TaSi2 Processing for 500 °C Durable SiC JFET-R Integrated Circuits von Spry, David J., Rajgopal, Srihari, Neudeck, Philip G., Chang, Carl W., Gonzalez, Jose M.

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Experimental Study on Mitigation of Lifetime-Limiting Dielectric Cracking in Extreme Temperature 4H-SiC JFET Integrated Circuits von Neudeck, Philip G., Spry, David J., Chang, Carl W.

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Extreme temperature 6H-SiC JFET integrated circuit technology von Neudeck, Philip G., Garverick, Steven L., Spry, David J., Chen, Liang-Yu, Beheim, Glenn M., Krasowski, Michael J., Mehregany, Mehran

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Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions von Neudeck, Philip G., Chen, Liangyu, Meredith, Roger D., Lukco, Dorothy, Spry, David J., Nakley, Leah M., Hunter, Gary W.

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Experimental Study of Structural Materials for Prolonged Venus Surface Exploration Missions von Lukco, Dorothy, Spry, David J, Neudeck, Philip G, Nakley, Leah M, Phillips, Kyle G, Okojie, Robert S, Hunter, Gary W

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Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages von Neudeck, Philip G., Krasowski, Michael J., Prokop, Norman F., Chen, Liang Yu, Spry, David J.

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Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C von Neudeck, Philip G., Chen, Liang Yu, Spry, David J.

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Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 °C von NEUDECK, Philip G, SPRY, David J, PROKOP, Norman F, CHEN, Liang-Yu, BEHEIM, Glenn M, OKOJIE, Robert S, CHANG, Carl W, MEREDITH, Roger D, FERRIER, Terry L, EVANS, Laura J, KRASOWSKI, Michael J

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Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect von Beheim, Glenn M., Krasowski, Michael J., Chang, Carl W., Neudeck, Philip G., Prokop, Norman F., Spry, David J., Lukco, Dorothy, Chen, Liang Yu

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Magnetic Field Sensing with 4H SiC Diodes: N vs P Implantation von Cochrane, Corey J., Ashton, James, Waskiewicz, Ryan J., Kraus, Hannes, Neudeck, Philip G., Lenahan, Patrick M., Spry, David J.

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Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits von Spry, David J., Chen, Liang Yu, Lukco, Dorothy, Krasowski, Michael J., Chang, Carl W., Neudeck, Philip G., Prokop, Norman F., Beheim, Glenn M.

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Experimentally observed electrical durability of 4H-SiC JFET ICs operating from 500 °C to 700 °C von Neudeck, Philip G., Spry, David J., Liangyu Chen, Lukco, Dorothy, Chang, Carl W., Beheim, Glenn M.

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Evidence of Processing Non-Idealities in 4H-SiC Integrated Circuits Fabricated with Two Levels of Metal Interconnect von Chen, Liang Yu, Neudeck, Philip G., Beheim, Glenn M., Chang, Carl W., Lukco, Dorothy, Evans, Laura J., Spry, David J.

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Prolonged silicon carbide integrated circuit operation in Venus surface atmospheric conditions von Neudeck, Philip G., Meredith, Roger D., Chen, Liangyu, Spry, David J., Nakley, Leah M., Hunter, Gary W.

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Electrical Characterization of a 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design von Spry, David J., Neudeck, Philip G., Chen, Liang Yu, Chang, Carl W., Beheim, Glenn M.

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