Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory von Lefevre, Gauthier, Dewolf, Tristan, Guillaume, Nicolas, Blonkowski, Serge, Charpin-Nicolle, Christelle, Jalaguier, Eric, Nowak, Etienne, Bernier, Nicolas, Blomberg, Tom, Tuominen, Marko, Sprey, Hessel, Audoit, Guillaume, Schamm-Chardon, Sylvie

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MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier von Deijkers, Johanna (Sanne) H., Jong, Arthur A., Mattinen, Miika J., Schulpen, Jeff J. P. M., Verheijen, Marcel A., Sprey, Hessel, Maes, Jan Willem, Kessels, Wilhelmus (Erwin) M. M., Bol, Ageeth A., Mackus, Adriaan J. M.

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Effect of ultraviolet curing wavelength on low-k dielectric material properties and plasma damage resistance von Marsik, Premysl, Urbanowicz, Adam M., Verdonck, Patrick, De Roest, David, Sprey, Hessel, Baklanov, Mikhail R.

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Characterization and optimization of porogen-based PECVD deposited extreme low- k materials as a function of UV-cure time von Verdonck, Patrick, De Roest, David, Kaneko, Shinya, Caluwaerts, Rudy, Tsuji, Naoto, Matsushita, Kiyohiro, Kemeling, Nathan, Travaly, Youssef, Sprey, Hessel, Schaekers, Marc, Beyer, Gerald

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Nano-analytical investigation of the forming process in an Hf O 2-based resistive switching memory von Lefevre, Gauthier, Dewolf, Tristan, Guillaume, Nicolas, Blonkowski, Serge, Charpin-Nicolle, Christelle, Jalaguier, Eric, Nowak, Etienne, Bernier, Nicolas, Blomberg, Tom, Tuominen, Marko, Sprey, Hessel, Audoit, Guillaume, Schamm-Chardon, Sylvie

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Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora ® LK HM von Demuynck, Steven, Huffman, Craig, Claes, Martine, Suhard, Samuel, Versluijs, Janko, Volders, Henny, Heylen, Nancy, Kellens, Kristof, Croes, Kristof, Struyf, Herbert, Vereecke, Guy, Verdonck, Patrick, Roest, David De, Beynet, Julien, Sprey, Hessel, Beyer, Gerald P.

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Dielectric Reliability of 50 nm Half Pitch Structures in Aurora ® LK von Demuynck, Steven, Kim, Honggun, Huffman, Craig, Darnon, Maxime, Struyf, Herbert, Versluijs, Janko, Claes, Martine, Vereecke, Guy, Verdonck, Patrick, Volders, Henny, Heylen, Nancy, Kellens, Kristof, Roest, David De, Sprey, Hessel, Beyer, Gerald

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Integration of Porogen-Based Low-$k$ Films: Influence of Capping Layer Thickness and Long Thermal Anneals on Low-$k$ Damage and Reliability von Roest, David De, Vereecke, Bart, Huffman, Craig, Heylen, Nancy, Croes, Kristof, Arai, Hirofumi, Takamure, Noboru, Beynet, Julien, Sprey, Hessel, Matsushita, Kiyohiro, Kobayashi, Nobuyoshi, Verdonck, Patrick, Demuynck, Steven, Beyer, Gerald, Tokei, Zsolt, Struyf, Herbert

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MoS 2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barrier von Deijkers, Johanna (Sanne) H., de Jong, Arthur A., Mattinen, Miika J., Schulpen, Jeff J. P. M., Verheijen, Marcel A., Sprey, Hessel, Maes, Jan Willem, Kessels, Wilhelmus (Erwin) M. M., Bol, Ageeth A., Mackus, Adriaan J. M.

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A robust k ∼ 2.3 SiCOH low- k film formed by porogen removal with UV-cure von Kemeling, Nathan, Matsushita, Kiyohiro, Tsuji, Naoto, Kagami, Ken-ichi, Kato, Manabu, Kaneko, Shinya, Sprey, Hessel, de Roest, David, Kobayashi, Nobuyoshi

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Evaluation of integrity and barrier performance of atomic layer deposited WNxCy films on plasma enhanced chemical vapor deposited SiO2 for Cu metallization von Kim, Ki-Su, Lee, Moon-Sang, Yim, Sung-Soo, Kim, Hyun-Mi, Kim, Ki-Bum, Park, Hyung-Sang, Koh, Wonyong, Li, Wei-Min, Stokhof, Maarten, Sprey, Hessel

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Use of MIR-FTIR and k-value Measurements to Assess Potential Solutions to Reduce Damage During Porous Low-k Integration von Beynet, Julien, De Roest, David, Rochat, Nevine, Kellens, Kristof, Verdonck, Patrick, Sprey, Hessel

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Development of sub-10-nm atomic layer deposition barriers for Cu/low- k interconnects von Beyer, Gerald, Satta, Alessandra, Schuhmacher, Jörg, Maex, Karen, Besling, Wim, Kilpela, Olli, Sprey, Hessel, Tempel, Georg

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A robust k2.3 SiCOH low-k film formed by porogen removal with UV-cure von Kemeling, Nathan, Matsushita, Kiyohiro, Tsuji, Naoto, Kagami, Ken-ichi, Kato, Manabu, Kaneko, Shinya, Sprey, Hessel, de Roest, David, Kobayashi, Nobuyoshi

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Dielectric Reliability of 50nm Half Pitch Structures in Aurora® LK von Demuynck, S., Kim, H., Huffman, C., Darnon, Maxime, .Struyf, H., Versluijs, J., Claes, M., Vereecke, G., Verdonck, P., Volders, H., Heylen, N., Kellens, K., de Roest, D., Sprey, H., Beyer, G.

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Evaluation of integrity and barrier performance of atomic layer deposited W N x C y films on plasma enhanced chemical vapor deposited Si O 2 for Cu metallization von Kim, Ki-Su, Lee, Moon-Sang, Yim, Sung-Soo, Kim, Hyun-Mi, Kim, Ki-Bum, Park, Hyung-Sang, Koh, Wonyong, Li, Wei-Min, Stokhof, Maarten, Sprey, Hessel

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Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora\text{\textregistered LK HM von Demuynck, Steven, Huffman, Craig, Claes, Martine, Suhard, Samuel, Versluijs, Janko, Volders, Henny, Heylen, Nancy, Kellens, Kristof, Croes, Kristof, Struyf, Herbert, Vereecke, Guy, Verdonck, Patrick, De Roest, David, Beynet, Julien, Sprey, Hessel, Beyer, Gerald P

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Supplementary Material von Deijkers, J.H. (Sanne), Thepass, H., Verheijen, Marcel, Sprey, Hessel, Maes, Jan Willem, Kessels, W.M.M. (Erwin), Mackus, Adriaan

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Supplementary Material von Deijkers, J.H. (Sanne), Thepass, H., Verheijen, Marcel, Sprey, Hessel, Maes, Jan Willem, Kessels, W.M.M. (Erwin), Mackus, Adriaan

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Evaluation of integrity and barrier performance of atomic layer deposited WN{sub x}C{sub y} films on plasma enhanced chemical vapor deposited SiO{sub 2} for Cu metallization von Kim, Ki-Su, Lee, Moon-Sang, Yim, Sung-Soo, Kim, Hyun-Mi, Kim, Ki-Bum, Park, Hyung-Sang, Koh, Wonyong, Li, Wei-Min, Stokhof, Maarten, Sprey, Hessel, ASM Genitech Korea Ltd., Daejeon 306-230, ASM Microchemistry Ltd., Vaeinoe Auerin katu 12 A, 00560 Helsinki, ASM Belgium N.V., Kapeldreef 75, B-3001, Leuven

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