Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices von Jacobs, Alan G., Feigelson, Boris N., Spencer, Joseph A., Tadjer, Marko J., Hite, Jennifer K., Hobart, Karl D., Anderson, Travis J.

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A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3 von Spencer, Joseph A., Mock, Alyssa L., Jacobs, Alan G., Schubert, Mathias, Zhang, Yuhao, Tadjer, Marko J.

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Atomic layer deposition on particles using a fluidized bed reactor with in situ mass spectrometry von King, David M., Spencer, Joseph A., Liang, Xinhua, Hakim, Luis F., Weimer, Alan W.

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PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates von Spencer, Joseph A., Jacobs, Alan G., Hobart, Karl D., Koehler, Andrew D., Anderson, Travis J., Zhang, Yuhao, Tadjer, Marko J.

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Novel Codoping Moiety to Achieve Enhanced P‐Type Doping in GaN by Ion Implantation von Jacobs, Alan G., Spencer, Joseph A., Hite, Jennifer K., Hobart, Karl D., Anderson, Travis J., Feigelson, Boris N.

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Collective Phonon–Polaritonic Modes in Silicon Carbide Subarrays von Lu, Guanyu, Gubbin, Christopher R, Nolen, J. Ryan, Folland, Thomas G, Diaz-Granados, Katja, Kravchenko, Ivan I, Spencer, Joseph A, Tadjer, Marko J, Glembocki, Orest. J, De Liberato, Simone, Caldwell, Joshua D

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Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN von Jacobs, Alan G., Feigelson, Boris N., Lundh, James S., Spencer, Joseph A., Freitas, Jaime A., Gunning, Brendan P., Kaplar, Robert J., Zhang, Yuhao, Tadjer, Marko J., Hobart, Karl D., Anderson, Travis J.

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Novel Processing to Produce Polymer/Ceramic Nanocomposites by Atomic Layer Deposition von Liang, Xinhua, Hakim, Luis F., Zhan, Guo-Dong, McCormick, Jarod A., George, Steven M., Weimer, Alan W., Spencer II, Joseph A., Buechler, Karen J., Blackson, John, Wood, Charles J., Dorgan, John R.

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Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3 von Jacobs, Alan G., Spencer, Joseph A., Tadjer, Marko J., Feigelson, Boris N., Lamb, Abbey, Lee, Ming-Hsun, Peterson, Rebecca L., Alema, Fikadu, Osinsky, Andrei, Zhang, Yuhao, Hobart, Karl D., Anderson, Travis J.

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Corn Rootworm: Biology, Ecology, Behavior and Integrated Management

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PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates von Spencer, Joseph A., Jacobs, Alan G., Hobart, Karl D., Koehler, Andrew D., Anderson, Travis J., Zhang, Yuhao, Tadjer, Marko J.

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NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV von Wan, Hsiao-Hsuan, Li, Jian-Sian, Chiang, Chao-Ching, Xia, Xinyi, Ren, Fan, Masten, Hannah N., Lundh, James Spencer, Spencer, Joseph A., Alema, Fikadu, Osinsky, Andrei, Jacobs, Alan G., Hobart, Karl, Tadjer, Marko J., Pearton, S. J.

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Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging von Lundh, James Spencer, Pavlidis, Georges, Sasaki, Kohei, Centrone, Andrea, Spencer, Joseph A., Masten, Hannah N., Currie, Marc, Jacobs, Alan G., Konishi, Keita, Kuramata, Akito, Hobart, Karl D., Anderson, Travis J., Tadjer, Marko J.

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Electrothermal enhancement of β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer von Lundh, James Spencer, Cress, Cory, Jacobs, Alan G., Cheng, Zhe, Masten, Hannah N., Spencer, Joseph A., Sasaki, Kohei, Gallagher, James, Koehler, Andrew D., Konishi, Keita, Graham, Samuel, Kuramata, Akito, Anderson, Travis J., Tadjer, Marko J., Hobart, Karl D., Mastro, Michael A.

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Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility von Spencer, Joseph A., Tadjer, Marko J., Jacobs, Alan G., Mastro, Michael A., Lyons, John L., Freitas, Jaime A., Gallagher, James C., Thieu, Quang T., Sasaki, Kohei, Kuramata, Akito, Zhang, Yuhao, Anderson, Travis J., Hobart, Karl D.

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Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond von Masten, Hannah N., Lundh, James Spencer, Feygelson, Tatyana I., Sasaki, Kohei, Cheng, Zhe, Spencer, Joseph A., Liao, Pai-Ying, Hite, Jennifer K., Pennachio, Daniel J., Jacobs, Alan G., Mastro, Michael A., Feigelson, Boris N., Kuramata, Akito, Ye, Peide, Graham, Samuel, Pate, Bradford B., Hobart, Karl D., Anderson, Travis J., Tadjer, Marko J.

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Atmospheric pressure spatial atomic layer deposition web coating with in situ monitoring of film thickness von Yersak, Alexander S., Lee, Yung C., Spencer, Joseph A., Groner, Markus D.

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Operation of NiO/β-(Al 0.21 Ga 0.79 ) 2 O 3 /Ga 2 O 3 Heterojunction Lateral Rectifiers at up to 225 °C von Wan, Hsiao-Hsuan, Li, Jian-Sian, Chiang, Chao-Ching, Xia, Xinyi, Ren, Fan, Masten, Hannah N., Lundh, James Spencer, Spencer, Joseph A., Alema, Fikadu, Osinsky, Andrei, Jacobs, Alan G., Hobart, Karl, Tadjer, Marko J., Pearton, S. J.

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Operation of NiO/β-(Al0.21Ga0.79)2O3/Ga2O3 Heterojunction Lateral Rectifiers at up to 225 °C von Wan, Hsiao-Hsuan, Li, Jian-Sian, Chiang, Chao-Ching, Xia, Xinyi, Ren, Fan, Masten, Hannah N., Lundh, James Spencer, Spencer, Joseph A., Alema, Fikadu, Osinsky, Andrei, Jacobs, Alan G., Hobart, Karl, Tadjer, Marko J., Pearton, S. J.

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Outline of the evolution of the falls of Niagara von Spencer, Joseph William Winthrop, 1851- [from old catalog]

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