The electronic structure at the atomic scale of ultrathin gate oxides von Muller, D. A., Sorsch, T., Moccio, S., Baumann, F. H., Evans-Lutterodt, K., Timp, G.

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Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers von Green, M. L., Ho, M.-Y., Busch, B., Wilk, G. D., Sorsch, T., Conard, T., Brijs, B., Vandervorst, W., Räisänen, P. I., Muller, D., Bude, M., Grazul, J.

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Nanopores in solid-state membranes engineered for single molecule detection von Dimitrov, V, Mirsaidov, U, Wang, D, Sorsch, T, Mansfield, W, Miner, J, Klemens, F, Cirelli, R, Yemenicioglu, S, Timp, G

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Multi-component high- K gate dielectrics for the silicon industry von Manchanda, L, Morris, M.D, Green, M.L, van Dover, R.B, Klemens, F, Sorsch, T.W, Silverman, P.J, Wilk, G, Busch, B, Aravamudhan, S

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Tunneling into interface states as reliability monitor for ultrathin oxides von Ghetti, A., Sangiorgi, E., Bude, J., Sorsch, T.W., Weber, G.

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MEMS thermal imager with optical readout von Jones, C.D.W., Bolle, C.A., Ryf, R., Simon, M.E., Pardo, F., Aksyuk, V.A., Lai, W.Y.-C., Bower, J.E., Miner, J.F., Klemens, F.P., Cirelli, R.A., Sorsch, T.W., Ferry, E.J., Fetter, L.A., Pai, C.-S., Taylor, J.A., Vyas, B., Watson, G.P., Stekas, B., Baker, M.R., Papazian, A.R., Basavanhally, N.R., Mansfield, W.M., Kornblit, A., Keller, R.C., Gates, J.V., Ramirez, A.P.

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Flexible fabrication of large pixel count piston-tip-tilt mirror arrays for fast spatial light modulators von Pardo, Flavio, Cirelli, R.A., Ferry, E.J., Lai, W.Y.-C., Klemens, F.P., Miner, J.F., Pai, C.S., Bower, J.E., Mansfield, W.M., Kornblit, A., Sorsch, T.W., Taylor, J.A., Baker, M.R., Fullowan, R., Simon, M.E., Aksyuk, V.A., Ryf, R., Dyson, H., Arney, S.

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Beyond the gene chip von Heng, Jiunn Benjamin, Aksimentiev, Aleksei, Ho, Chuen, Dimitrov, Valentin, Sorsch, Thomas W., Miner, John F., Mansfield, William M., Schulten, Klaus, Timp, Gregory

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Small-signal performance and modeling of sub-50 nm nMOSFETs with fT above 460-GHz von DIMITROV, V, HENG, J. B, KORNBLIT, A, KLEMENS, F, BOWER, J, CIRELLI, R, FERRY, E. J, TAYLOR, A, FENG, M, TIMP, G, TIMP, K, DIMAURO, O, CHAN, R, HAFEZ, M, FENG, J, SORSCH, T, MANSFIELD, W, MINER, J

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Rapid thermal processing of silicon wafers with emissivity patterns von RABUS, M, FIORY, A. T, MANSFIELD, W, RAVINDRA, N. M, FRISELLA, P, AGARWAL, A, SORSCH, T, MINER, J, FERRY, E, KLEMENS, F, CIRELLI, R

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Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS von GREEN, M. L, SORSCH, T. W, TIMP, G. L, MULLER, D. A, WEIR, B. E, SILVERMAN, P. J, MOCCIO, S. V, KIM, Y. O

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Gate oxide reliability projection to the sub-2 nm regime von Weir, B E, Alam, M A, Bude, J D, Silverman, P J, Ghetti, A, Baumann, F, Diodato, P, Monroe, D, Sorsch, T, Timp, G L, Ma, Y, Brown, M M, Hamad, A, Hwang, D, Mason, P

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Monolithic fringe-field-activated crystalline silicon tilting-mirror devices von Greywall, D.S., Chien-Shing Pai, Sang-Hyun Oh, Chorng-Ping Chang, Marom, D.M., Busch, P.A., Cirelli, R.A., Taylor, J.A., Klemens, F.P., Sorsch, T.W., Bower, J.E., Lai, W.Y.-C., Soh, H.T.

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The role of native traps on the tunneling characteristics of ultra-thin (1.5–3 nm) oxides von Ghetti, A., Sangiorgi, E., Sorsch, T.W., Kizilyalli, I.

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Ultra-thin gate oxide reliability projections von Weir, B.E., Alam, M.A., Silverman, P.J., Baumann, F., Monroe, D., Bude, J.D., Timp, G.L., Hamad, A., Ma, Y., Brown, M.M., Hwang, D., Sorsch, T.W., Ghetti, A., Wilk, G.D.

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Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy von Donnelly, V. M., Klemens, F. P., Sorsch, T. W., Timp, G. L., Baumann, F. H.

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The relentless march of the MOSFET gate oxide thickness to zero von Timp, G, Bude, J, Baumann, F, Bourdelle, K.K, Boone, T, Garno, J, Ghetti, A, Green, M, Gossmann, H, Kim, Y, Kleiman, R, Kornblit, A, Klemens, F, Moccio, S, Muller, D, Rosamilia, J, Silverman, P, Sorsch, T, Timp, W, Tennant, D, Tung, R, Weir, B

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Progress toward a 30 nm silicon metal–oxide–semiconductor gate technology von Tennant, D. M., Timp, G. L., Ocola, L. E., Green, M., Sorsch, T., Kornblit, A., Klemens, F., Kleiman, R., Kim, Y., Timp, W.

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Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon von Lu, H. C., Gusev, E. P., Garfunkel, E., Busch, B. W., Gustafsson, T., Sorsch, T. W., Green, M. L.

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COM2 enhanced graded base SiGe technology for high speed applications von Ivanov, T., Shive, S., Esry, T., Lee, C., Johnson, R., Sorsch, T., Banoo, K., Smith, P., Carroll, M., Moinian, S., Mastrapasqua, M., Frei, A., Chen, A., King, C., Hamad, A., Martin, E.

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