Stability, Reliability, and Robustness of GaN Power Devices: A Review von Kozak, Joseph P., Zhang, Ruizhe, Porter, Matthew, Song, Qihao, Liu, Jingcun, Wang, Bixuan, Wang, Rudy, Saito, Wataru, Zhang, Yuhao

Volltext

Gate Switching Lifetime of P-Gate GaN HEMT: Circuit Characterization and Generalized Model von Wang, Bixuan, Song, Qihao, Zhang, Yuhao

Volltext

Output Capacitance Loss of GaN HEMTs in Steady-State Switching von Song, Qihao, Zhang, Ruizhe, Li, Qiang, Zhang, Yuhao

Volltext

Origin of Soft-Switching Output Capacitance Loss in Cascode GaN HEMTs at High Frequencies von Song, Qihao, Zhang, Ruizhe, Li, Qiang, Zhang, Yuhao

Volltext

Overvoltage Robustness of p-Gate GaN HEMTs in High Frequency Switching up to Megahertz von Zhang, Ruizhe, Song, Qihao, Li, Qiang, Zhang, Yuhao

Volltext

Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching von Song, Qihao, Zhang, Ruizhe, Kozak, Joseph, Liu, Jingcun, Li, Qiang, Zhang, Yuhao

Volltext

True Breakdown Voltage and Overvoltage Margin of GaN Power HEMTs in Hard Switching von Kozak, Joseph P., Zhang, Ruizhe, Song, Qihao, Liu, Jingcun, Saito, Wataru, Zhang, Yuhao

Volltext

Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching von Wang, Bixuan, Zhang, Ruizhe, Wang, Hengyu, He, Quanbo, Song, Qihao, Li, Qiang, Udrea, Florin, Zhang, Yuhao

Volltext

Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage von Kozak, Joseph P., Song, Qihao, Zhang, Ruizhe, Ma, Yunwei, Liu, Jingcun, Li, Qiang, Saito, Wataru, Zhang, Yuhao

Volltext

Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method von Wang, Bixuan, Zhang, Ruizhe, Song, Qihao, Wang, Hengyu, He, Quanbo, Li, Qiang, Udrea, Florin, Zhang, Yuhao

Volltext

Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit von Song, Qihao, Yang, Xin, Wang, Bixuan, Litchford, Everest, Sun, Yi, Kong, Pengju, Li, Qiang, Zhang, Yuhao

Volltext

Dynamic RON Free 1.2-kV Vertical GaN JFET von Yang, Xin, Zhang, Ruizhe, Wang, Bixuan, Song, Qihao, Walker, Andy, Pidaparthi, Subhash, Drowley, Cliff, Zhang, Yuhao

Volltext

Minimizing Output Capacitance Loss in GaN Power HEMT von Song, Qihao, Briga, Adam, Veprinsky, Valery, Volkov, Roman, Li, Qiang, Zhang, Yuhao

Volltext

Robust Avalanche in 1.7 kV Vertical GaN Diodes with a Single-Implant Bevel Edge Termination von Xiao, Ming, Wang, Yifan, Zhang, Ruizhe, Song, Qihao, Porter, Matthew, Carlson, Eric, Cheng, Kai, Ngo, Khai, Zhang, Yuhao

Volltext

Dynamic R ON Free 1.2-kV Vertical GaN JFET von Yang, Xin, Zhang, Ruizhe, Wang, Bixuan, Song, Qihao, Walker, Andy, Pidaparthi, Subhash, Drowley, Cliff, Zhang, Yuhao

Volltext

Chip Size Minimization for Wide and Ultrawide Bandgap Power Devices von Wang, Boyan, Xiao, Ming, Zhang, Zichen, Wang, Yifan, Qin, Yuan, Song, Qihao, Lu, Guo-Quan, Ngo, Khai, Zhang, Yuhao

Volltext

Evaluation and MHz Converter Application of 1.2-kV Vertical GaN JFET von Yang, Xin, Zhang, Ruizhe, Yang, Qiuzhe, Song, Qihao, Litchford, Everest, Walker, Andy J., Pidaparthi, Subhash, Drowley, Cliff, Dong, Dong, Li, Qiang, Zhang, Yuhao

Volltext

Optical scanning Fourier ptychographic microscopy von Wang, Lin, Song, Qihao, Zhang, Hongbo, Yuan, Caojin, Poon, Ting-Chung

Volltext

(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices von Zhang, Yuhao, Zhang, Ruizhe, Song, Qihao, Li, Qiang, Liu, J.

Volltext

(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices von Zhang, Yuhao, Zhang, Ruizhe, Song, Qihao, Li, Qiang, Liu, J.

Volltext