Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces von Sobiesierski, Z, Westwood, D I, Matthai, C C

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In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy von Ozanyan, K. B., Parbrook, P. J., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z., Westwood, D. I.

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As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy von Sobiesierski, Z., Westwood, D. I., Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R.

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Reflectance anisotropy spectroscopy and the growth of low-dimensional materials von Sobiesierski, Z, Westwood, D.I

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The molecular beam epitaxial growth of GaAs/GaAs(111)B : doping and growth temperature studies von WOOLF, D. A, SOBIESIERSKI, Z, WESTWOOD, D. I, WILLIAMS, R. H

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On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films von Westwood, D.I., Sobiesierski, Z., Steimetz, E., Zettler, T., Richter, W.

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Optical monitoring of InP monolayer growth rates von Parbrook, P. J., Ozanyan, K. B., Hopkinson, M., Whitehouse, C. R., Sobiesierski, Z., Westwood, D. I.

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The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects von Westwood, D.I, Sobiesierski, Z, Matthai, C.C

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Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces von SOBIESIERSKI, Z, DHARMADASA, I. M, WILLIAMS, R. H

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Phonon study of temperature evolution of strain in GaAs/Si(0 0 1) and GaAs/Si(1 1 1) heterostructures von Quagliano, L.G, Sobiesierski, Z, Orani, D, Ricci, A

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Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy von Parbrook, P.J., Ozanyan, K.B., Hopkinson, M., Whitehouse, C.R., Sobiesierski, Z., Westwood, D.I.

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Evidence for hydrogen accumulation at strained layer heterojunctions von SOBIESIERSKI, Z, CLEGG, J. B

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Metal contacts to II-VI semiconductors: CdS and CdTe von Williams, R.H., Forsyth, N., Dharmadasa, I.M., Sobiesierski, Z.

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Hydrogen activated radiative states in GaAs/GaAlAs heterostructures and InGaAs/GaAs multiquantum wells von Capizzi, M., Coluzza, C., Emiliani, V., Frankl, P., Frova, A., Sarto, F., Bonapasta, A. Amore, Sobiesierski, Z., Sacks, R. N.

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Growth optimization of n -type GaAs on GaAs(201) substrates von Williams, J. P., Westwood, D. I., Sobiesierski, Z., Aubrey, J. E.

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Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy von SOBIESIERSKI, Z, WOOLF, D. A, WESTWOOD, D. I, WILLIAMS, R. H

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Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy von SOBIESIERSKI, Z, CLARK, S. A, WILLIAMS, R. H, TABATA, A, BENYATTOU, T, GUILLOT, G, GENDRY, M, HOLLINGER, G, VIKTOROVITCH, P

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Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy von Sobiesierski, Z., Westwood, D.I., Williams, R.H.

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The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies von Woolf, D.A., Williams, J.P., Westwood, D.I., Sobiesierski, Z., Aubrey, J.E., Williams, R.H.

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Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation von SOBIESIERSKI, Z, WOOLF, D. A, WESTWOOD, D. I, FROVA, A, COLUZZA, C

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