Preparation and characterization of oxidized silver thin films von Pettersson, L.A.A., Snyder, P.G.

Volltext

Determination of AlAs optical constants by variable angle spectroscopic ellipsometry and a multisample analysis von Herzinger, C. M., Yao, H., Snyder, P. G., Celii, F. G., Kao, Y.-C., Johs, B., Woollam, J. A.

Volltext

Characterization of pulsed laser deposited zinc oxide von Ianno, N.J., McConville, L., Shaikh, N., Pittal, S., Snyder, P.G.

Volltext

Dielectric functions and electronic band structure of lead zirconate titanate thin films von Lee, Hosun, Kang, Youn Seon, Cho, Sang-Jun, Xiao, Bo, Morkoç, Hadis, Kang, Tae Dong, Lee, Ghil Soo, Li, Jingbo, Wei, Su-Huai, Snyder, P. G., Evans, J. T.

Volltext

Control of etch depth in patterned semiconductor substrates using real time spectroscopic ellipsometry von Cho, S.-J., Snyder, P.G., Ianno, N.J., Herzinger, C.M., Johs, B.

Volltext

Spectroscopic analysis of photochromic films von Mo, Yeon-Gon, Dillon, R. O., Snyder, P. G.

Volltext

InP optical constants between 0.75 and 5.0 eV determined by variable-angle spectroscopic ellipsometry von Herzinger, C. M., Snyder, P. G., Johs, B., Woollam, J. A.

Volltext

Optical properties of photochromic organic–inorganic composites von Mo, Yeon-Gon, Dillon, R.O, Snyder, P.G, Tiwald, T.E

Volltext

Temperature dependence of optical properties of GaAs von Yao, Huade, Snyder, Paul G., Woollam, John A.

Volltext

Studies of thin strained InAs, AlAs, and AlSb layers by spectroscopic ellipsometry von Herzinger, C. M., Snyder, P. G., Celii, F. G., Kao, Y.-C., Chow, D., Johs, B., Woollam, J. A.

Volltext

Visible and infrared photochromic properties of amorphous WO3−x films von Mo, Yeon-Gon, Dillon, R. O., Snyder, P. G.

Volltext

Characterization of polycrystalline silicon thin-film multilayers by variable angle spectroscopic ellipsometry von Snyder, Paul G., Xiong, Yi-Ming, Woollam, John A., Krosche, Eric R., Strausser, Yale

Volltext

Optical properties of boron carbide (B5C) thin films fabricated by plasma-enhanced chemical-vapor deposition von Ahmad, Ahmad A., Ianno, N. J., Snyder, P. G., Welipitiya, D., Byun, D., Dowben, P. A.

Volltext

Modeling AlxGa1-xAs optical constants as functions of composition von SNYDER, P. G, WOOLLAM, J. A, ALTEROVITZ, S. A, JOHS, B

Volltext

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry von Alterovitz, S.A., Sieg, R.M., Yao, H.D., Snyder, P.G., Woollam, J.A., Pamulapati, J., Bhattacharya, P.K., Sekula-Moise, P.A.

Volltext

Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb von Snyder, P.G., Tiwald, T.E., Thompson, D.W., Ianno, N.J., Woollam, J.A., Mauk, M.G., Shellenbarger, Z.A.

Volltext

Study of concentration-dependent dielectric properties of n-type GaAs using variable angle spectroscopic ellipsometry von Snyder, Paul G., Xiong, Yi-Ming

Volltext

Variable angle of incidence spectroscopic ellipsometry: application to GaAs-AlxGa1-xAs multiple heterostructures von SNYDER, P. G, ROST, M. C, BU-ABBUD, G. H, WOOLLAM, J. A, ALTEROVITZ, S. A

Volltext

Etch depth control in bulk GaAs using patterning and real time spectroscopic ellipsometry von Cho, Sang-Jun, Snyder, P. G., Herzinger, C. M., Johs, B.

Volltext

Optical characterization of porous alumina from vacuum ultraviolet to midinfrared von Thompson, Daniel W., Snyder, Paul G., Castro, Leon, Yan, Li, Kaipa, Prasuna, Woollam, John A.

Volltext