In situ fabricated 3D micro-lenses for photonic integrated circuits von Thomas, R, Li, J, Ladak, Sam, Barrow, D, Smowton, P M

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Design and characterisation of multi-mode interference reflector lasers for integrated photonics von Albeladi, F T, Gillgrass, S, Nabialek, J, Mishra, P, Forrest, R, Albiladi, T R, Allford, C P, Deng, H, Tang, M, Liu, H-Y, Shutts, S, Smowton, P M

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Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs von Gillgrass, S J, Allford, C P, Peach, T, Baker, J, Johnson, A D, Davies, J I, Joel, A M, Shutts, S, Smowton, P M

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Gain measurements on VCSEL material using segmented contact technique von Hentschel, C, Allford, C P, Gillgrass, S-J, Travers-Nabialek, J, Forrest, R, Baker, J, Meiklejohn, J, Powell, D, Meredith, W, Haji, M, Davies, J I, Shutts, S, Smowton, P M

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Photonic integration platform with pump free microfluidics von Thomas, R, Harrison, A, Barrow, D, Smowton, P M

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Dual-wavelength InP quantum dot lasers von Shutts, S., Smowton, P. M., Krysa, A. B.

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Fermi-dirac and random carrier distributions in quantum dot lasers von Hutchings, M., O'Driscoll, I., Smowton, P. M., Blood, P.

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Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers von Matthews, D. R., Summers, H. D., Smowton, P. M., Hopkinson, M.

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Characterization of semiconductor laser gain media by the segmented contact method von Blood, P., Lewis, G.M., Smowton, P.M., Summers, H., Thomson, J., Lutti, J.

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Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm von Pope, I. A., Smowton, P. M., Blood, P., Thomson, J. D., Kappers, M. J., Humphreys, C. J.

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InAsP AlGaInP GaAs QD laser operating at ∼770 nm von Krysa, A B, Roberts, J S, Devenson, J, Beanland, R, Karomi, I, Shutts, S, Smowton, P M

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Determination of the piezoelectric field in InGaN quantum wells von Brown, I. H., Pope, I. A., Smowton, P. M., Blood, P., Thomson, J. D., Chow, W. W., Bour, D. P., Kneissl, M.

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Effect of Growth Temperature on InP QD Lasers von Smowton, P.M., Al-Ghamdi, M.S., Shutts, S., Edwards, G., Hutchings, M., Krysa, A.B.

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Optical absorption cross section of quantum dots von Osborne, S W, Blood, P, Smowton, P M, Xin, Y C, Stintz, A, Huffaker, D, Lester, L F

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Polarization response of quantum-confined structures using edge-photovoltage spectroscopy von Mexis, M, Blood, P, Smowton, P M

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Long wavelength quantum-dot lasers selectively populated using tunnel injection von George, A A, Smowton, P M, Mi, Z, Bhattacharya, P

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InP-GaInP quantum-dot lasers emitting between 690-750 nm von Smowton, P.M., Lutti, J., Lewis, G.M., Krysa, A.B., Roberts, J.S., Houston, P.A.

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Determination of single-pass optical gain and internal loss using a multisection device von Thomson, J. D., Summers, H. D., Hulyer, P. J., Smowton, P. M., Blood, P.

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Recombination mechanisms in 1.3-μm InAs quantum-dot lasers von Sandall, I.C., Smowton, P.M., Walker, C.L., Liu, H.Y., Hopkinson, M., Mowbray, D.J.

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Thermodynamic balance in quantum dot lasers von Summers, H D, Thomson, J D, Smowton, P M, Blood, P, Hopkinson, M

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