In-plane imperfections in GaN studied by x-ray diffraction von Vickers, M E, Kappers, M J, Datta, R, McAleese, C, Smeeton, T M, Rayment, F D G, Humphreys, C J

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Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope von Smeeton, T. M., Kappers, M. J., Barnard, J. S., Vickers, M. E., Humphreys, C. J.

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Optical and microstructural studies of InGaN∕GaN single-quantum-well structures von Graham, D. M., Soltani-Vala, A., Dawson, P., Godfrey, M. J., Smeeton, T. M., Barnard, J. S., Kappers, M. J., Humphreys, C. J., Thrush, E. J.

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Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering von Vickers, M. E., Kappers, M. J., Smeeton, T. M., Thrush, E. J., Barnard, J. S., Humphreys, C. J.

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Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy von Smeeton, T. M., Kappers, M. J., Barnard, J. S., Vickers, M. E., Humphreys, C. J.

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Exciton localization in InGaN/GaN single quantum well structures von Graham, D. M., Vala, A. Soltani, Dawson, P., Godfrey, M. J., Kappers, M. J., Smeeton, T. M., Barnard, J. S., Humphreys, C. J., Thrush, E. J.

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Continuous-wave operation of ingan multiple quantum well laser diodes grown by molecular beam epitaxy von KAUER, M, HOOPER, S. E, BOUSQUET, V, JOHNSON, K, ZELLWEGER, C, BARNES, J. M, WINDLE, J, SMEETON, T. M, HEFFEMAN, J

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The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy von Smeeton, T M, Humphreys, C J, Barnard, J S, Kappers, M J

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Degradation of InGaN∕GaN laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings von Rossetti, M., Smeeton, T. M., Tan, W.-S., Kauer, M., Hooper, S. E., Heffernan, J., Xiu, H., Humphreys, C. J.

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Sensitisation of erbium luminescence in erbium-implanted alumina von Kenyon, A.J., Chryssou, C.E., Smeeton, T.M., Humphreys, C.J., Hole, D.E.

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Hydrogen permeation through mild steel in temperature range 20-500°C measured by hydrogen collection method von Dean, F. W. H., Smeeton, T. M., Fray, D. J.

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High-power and long-lifetime InGaN blue-violet laser diodes grown by molecular beam epitaxy von TAN, W. S, KAUER, M, HOOPER, S. E, BARNES, J. M, ROSSETTI, M, SMEETON, T. M, BOUSQUET, V, HEFFERNAN, J

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Performance and degradation characteristics of blue-violet laser diodes grown by molecular beam epitaxy von Tan, W. S., Kauer, M., Hooper, S. E., Smeeton, T. M., Bousquet, V., Rossetti, M., Heffernan, J., Xiu, H., Humphreys, C. J.

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Strong carrier confinement and negligible piezoelectric effect in InGaN/GaN quantum dots von Sénès, M., Smith, K.L., Smeeton, T.M., Hooper, S.E., Heffernan, J.

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Degradation of III-nitride laser diodes grown by molecular beam epitaxy von Xiu, H., Thrush, E. J., Kauer, M., Smeeton, T. M., Hooper, S. E., Heffernan, J., Humphreys, C. J.

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Broadband sensitization of 1.53μm Er3+ luminescence in erbium-implanted alumina von Chryssou, C. E., Kenyon, A. J., Smeeton, T. M., Humphreys, C. J., Hole, D. E.

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Degradation of In Ga N ∕ Ga N laser diodes analyzed by microphotoluminescence and microelectroluminescence mappings von Rossetti, M., Smeeton, T. M., Tan, W.-S., Kauer, M., Hooper, S. E., Heffernan, J., Xiu, H., Humphreys, C. J.

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Atomic force microscopy analysis of cleaved facets in III-nitride laser diodes grown on free-standing GaN substrates von Smeeton, T. M., Bousquet, V., Hooper, S. E., Kauer, M., Heffernan, J.

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High-power and long-lifetime InGaN blue-violet laser diodes grown by molecular beam epitaxy von Tan, W S, Kauer, M, Hooper, S E, Barnes, J M, Rossetti, M, Smeeton, T M, Bousquet, V, Heffernan, J

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Optical and microstructural studies of In Ga N ∕ Ga N single-quantum-well structures von Graham, D. M., Soltani-Vala, A., Dawson, P., Godfrey, M. J., Smeeton, T. M., Barnard, J. S., Kappers, M. J., Humphreys, C. J., Thrush, E. J.

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