Teaching Series and Parallel Connections von Skromme, B. J., Wong, M. L., Redshaw, C. J., O'Donnell, M. A.

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Surface recombination and sulfide passivation of GaN von Martinez, G. L., Curiel, M. R., Skromme, B. J., Molnar, R. J.

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Design and optimization of junction termination extension (JTE) for 4H–SiC high voltage Schottky diodes von Mahajan, Atul, Skromme, B.J.

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Band-edge exciton states in AlN single crystals and epitaxial layers von Chen, L., Skromme, B. J., Dalmau, R. F., Schlesser, R., Sitar, Z., Chen, C., Sun, W., Yang, J., Khan, M. A., Nakarmi, M. L., Lin, J. Y., Jiang, H.-X.

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Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes von Wang, Y., Ali, G. N., Mikhov, M. K., Vaidyanathan, V., Skromme, B. J., Raghothamachar, B., Dudley, M.

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Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers von Skromme, B.J., Sasikumar, A., Green, B.M., Hartin, O.L., Weitzel, C.E., Miller, M.G.

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Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity von Skromme, B. J., Luckowski, E., Moore, K., Bhatnagar, M., Weitzel, C. E., Gehoski, T., Ganser, D.

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Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates von Bai, J., Dudley, M., Chen, L., Skromme, B. J., Wagner, B., Davis, R. F., Chowdhury, U., Dupuis, R. D.

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Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy von Skromme, B. J., Jayapalan, J., Vaudo, R. P., Phanse, V. M.

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Optical spectroscopy of Si-related donor and acceptor levels in Si-doped GaN grown by hydride vapor phase epitaxy von Jayapalan, J., Skromme, B. J., Vaudo, R. P., Phanse, V. M.

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Optical characterization of bulk GaN grown by a Na–Ga melt technique von Skromme, B.J, Palle, K, Poweleit, C.D, Yamane, H, Aoki, M, DiSalvo, F.J

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Optical spectroscopy of bulk GaN crystals grown from a Na–Ga melt von Skromme, B. J., Palle, K. C., Poweleit, C. D., Yamane, H., Aoki, M., DiSalvo, F. J.

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Optical and magneto-optical characterization of heteroepitaxial gallium nitride von Skromme, B.J

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Effects of passivating ionic films on the photoluminescence properties of GaAs von SKROMME, B. J, SANDROFF, C. J, YABLONOVITCH, E, GMITTER, T

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Correlated structural and optical characterization of ammonothermally grown bulk GaN von Bai, J., Dudley, M., Raghothamachar, B., Gouma, P., Skromme, B. J., Chen, L., Hartlieb, P. J., Michaels, E., Kolis, J. W.

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Photoluminescence studies of type-II CdSe/CdTe superlattices von Li, Jing-Jing, Yin, Leijun, Johnson, Shane R., Skromme, B. J., Wang, Shumin, Liu, Xinyu, Ding, Ding, Ning, Cun-Zheng, Furdyna, Jacek K., Zhang, Yong-Hang

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Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults von Aoki, M., Yamane, Hisanori, DiSalvo, F.J., Chen, L., Skromme, B.J., Mikhov, M.K.

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Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates von Bhat, I., Wang, Rong Jun, Chen, L., Skromme, B.J., Mikhov, M.K., Samson, G., Li, Can Hua

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Optical Spectroscopy of Polytypic Quantum Wells in SiC von Samson, G, Chen, L, Skromme, B J, Wang, R, Li, C, Bhat, I

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Band bending, Fermi level pinning, and surface fixed charge on chemically prepared GaAs surfaces von YABLONOVITCH, E, SKROMME, B. J, BHAT, R, HARBISON, J. P, GMITTER, T. J

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