Ultrafast relaxation dynamics of highly excited hot electrons in silicon von Tanimura, Hiroshi, Kanasaki, Jun'ichi, Tanimura, Katsumi, Sjakste, Jelena, Vast, Nathalie

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Theoretical phase diagram of boron carbide from ambient to high pressure and temperature von Jay, Antoine, Hardouin Duparc, Olivier, Sjakste, Jelena, Vast, Nathalie

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Energy relaxation mechanism of hot-electron ensembles in GaAs: Theoretical and experimental study of its temperature dependence von Sjakste, Jelena, Vast, Nathalie, Barbarino, Giuliana, Calandra, Matteo, Mauri, Francesco, Kanasaki, Junichi, Tanimura, Hiroshi, Tanimura, Katsumi

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Nanoscale mechanisms for the reduction of heat transport in bismuth von Markov, Maxime, Sjakste, Jelena, Fugallo, Giorgia, Paulatto, Lorenzo, Lazzeri, Michele, Mauri, Francesco, Vast, Nathalie

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Carbon-rich icosahedral boron carbide designed from first principles von Jay, Antoine, Vast, Nathalie, Sjakste, Jelena, Duparc, Olivier Hardouin

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Occurrence of the collective Ziman limit of heat transport in cubic semiconductors Si, Ge, AlAs and AlP: scattering channels and size effects von Sjakste, Jelena, Markov, Maxime, Sen, Raja, Fugallo, Giorgia, Paulatto, Lorenzo, Vast, Nathalie

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Ab initio study of defective chains in icosahedral boron carbide B4C von Betranhandy, Emmanuel, Vast, Nathalie, Sjakste, Jelena

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Hot electron relaxation and energy loss rate in silicon: Temperature dependence and main scattering channels von Sen, R., Vast, N., Sjakste, J.

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epiq: An open-source software for the calculation of electron-phonon interaction related properties von Marini, Giovanni, Marchese, Guglielmo, Profeta, Gianni, Sjakste, Jelena, Macheda, Francesco, Vast, Nathalie, Mauri, Francesco, Calandra, Matteo

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Theoretical Raman spectrum of boron carbide B4.3C under pressure von Jay, Antoine, Hardouin Duparc, Olivier, Sjakste, Jelena, Vast, Nathalie

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Role of dimensionality and size in controlling the drag Seebeck coefficient of doped silicon nanostructures: A fundamental understanding von Sen, Raja, Vast, Nathalie, Sjakste, Jelena

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Thermodynamical stability of carbon-based defects in α boron from first principles von Cho, Yeonsoo, Sjakste, Jelena, Hardouin Duparc, Olivier, Vast, Nathalie

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Role of Dimensionality and Size in Governing the Drag Seebeck Coefficient of Doped Silicon Nanostructures: A Fundamental Understanding von Sen, Raja, Vast, Nathalie, Sjakste, Jelena

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When carbon impurities trigger the synthesis of alpha boron at high pressure and high temperature von Chakraborti, Amrita, Cho, Yeonsoo, Sjakste, Jelena, Baptiste, Benoit, Henry, Laura, Guignot, Nicolas, Le Godec, Yann, Vast, Nathalie

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Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe von Chen, Zhesheng, Sjakste, Jelena, Dong, Jingwei, Taleb-Ibrahimi, Amina, Rueff, Jean-Pascal, Shukla, Abhay, Peretti, Jacques, Papalazarou, Evangelos, Marsi, Marino, Perfetti, Luca

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Formation of hot-electron ensembles quasiequilibrated in momentum space by ultrafast momentum scattering of highly excited hot electrons photoinjected into the Γ valley of GaAs von Tanimura, Hiroshi, Kanasaki, Jun'ichi, Tanimura, Katsumi, Sjakste, Jelena, Vast, Nathalie, Calandra, Matteo, Mauri, Francesco

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Hydrodynamic Heat Transport Regime in Bismuth: A Theoretical Viewpoint von Markov, Maxime, Sjakste, Jelena, Barbarino, Giuliana, Fugallo, Giorgia, Paulatto, Lorenzo, Lazzeri, Michele, Mauri, Francesco, Vast, Nathalie

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Boron carbide under torsional deformation: Evidence of the formation of chain vacancies in the plastic regime von Chakraborti, Amrita, Jay, Antoine, Hardouin Duparc, Olivier, Sjakste, Jelena, Béneut, Keevin, Vast, Nathalie, Le Godec, Yann

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Anharmonic coupling, thermal transport and acoustic wave attenuation in cubic semiconductors and bismuth von Markov, Maxime, Sjakste, Jelena, Vast, Nathalie, Perrin, Bernard, Paulatto, Lorenzo

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Ab initio method for calculating electron-phonon scattering times in semiconductors: application to GaAs and GaP von Sjakste, Jelena, Vast, Nathalie, Tyuterev, Valeriy

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