Transient Turn-ON Characteristics of the Fin p-Body IGBT von Hao Feng, Wentao Yang, Onozawa, Yuichi, Yoshimura, Takashi, Tamenori, Akira, Sin, Johnny K. O.

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A Novel Silicon-Embedded Coreless Inductor for High-Frequency Power Management Applications von Rongxiang Wu, Sin, J K O

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A New Trench Power MOSFET With an Inverted L-Shaped Source Region von Ng, Jacky C W, Sin, Johnny K O, Sumida, Hitoshi, Toyoda, Yoshiaki, Ohi, Akihiko, Tanaka, Hiroyuki, Nishimura, Takeyoshi, Ueno, Katsunori

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Analytical Modeling of AC Resistance in Thick Coil Integrated Spiral Inductors von Xiangming Fang, Rongxiang Wu, Sin, Johnny K. O.

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A Novel Sloped Field Plate-Enhanced Ultra-Short Edge Termination Structure von Wentao Yang, Hao Feng, Xiangming Fang, Onozawa, Yuichi, Tanaka, Hiroyuki, Sin, Johnny K. O.

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Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications von Shi, R. P., Huang, X. D., Sin, Johnny K. O., Lai, P. T.

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Analysis and Characterization of the Punchthrough n-p-n Diode for Hard Switching Power Control Applications von Peng, Xin, Liu, Yong, Feng, Hao, Huang, Linhua, Sin, Johnny K. O.

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A Fast and Soft Reverse Recovery Diode With a Punch-Through NPN Structure von Peng, Xin, Liu, Yong, Feng, Hao, Huang, Linhua, Sin, Johnny K. O.

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Integrated Power Devices and TCAD Simulation von Fu, Yue

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Static Performance and Threshold Voltage Stability Improvement of Al2O3/LaAlO3/SiO2 Gate-Stack for SiC Power MOSFETs von Huang, Linhua, Liu, Yong, Peng, Xin, Onozawa, Yuichi, Tsuji, Takashi, Fujishima, Naoto, Sin, Johnny K. O.

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On-Resistance-Reliability Tradeoffs in Al₂O₃/LaAlO₃/SiO₂ Gate for SiC Power MOSFETs von Huang, Linhua, Liu, Yong, Peng, Xin, Tsuji, Takashi, Onozawa, Yuichi, Fujishima, Naoto, Sin, Johnny K. O.

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A New Fan-Out-Package-Embedded Power Inductor Technology von Ding, Yixiao, Fang, Xiangming, Wu, Rongxiang, Sin, Johnny K. O.

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A High-Efficiency Double-Side Silicon- Embedded Inductor for Integrated DC-DC Converter Applications von Lv, Guangfu, Liao, Niteng, Ding, Yixiao, Fang, Xiangming, Bai, Feiming, Sin, Johnny K. O., Wu, Rongxiang

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Scalability of Quasi-Hysteretic FSM-Based Digitally Controlled Single-Inductor Dual-String Buck LED Driver to Multiple Strings von Lee, Albert T. L., Sin, Johnny K. O., Chan, Philip C. H.

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Low-Temperature-Processed Power Schottky Diode Based on Amorphous Indium-Tin-Zinc-Oxide/Indium-Gallium-Zinc-Oxide Bilayer von Zhou, Xianda, Lu, Lei, Wang, Kai, Wong, Man, Sin, Johnny K. O., Kwok, Hoi-Sing

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Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices von Liu, Yong, Yang, Wentao, Feng, Hao, Huang, Linhua, Onozawa, Yuichi, Wakimoto, Setsuko, Fujishima, Naoto, Sin, Johnny K. O.

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Characterization of Al2O3/LaAlO3/SiO2 Gate Stack on 4H-SiC After Post-Deposition Annealing von Huang, Linhua, Liu, Yong, Xiao, Chao, Ding, Yixiao, Peng, Xin, Onozawa, Yuichi, Tsuji, Takashi, Fujishima, Naoto, Sin, Johnny K. O.

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A Suspended Thick-Winding Inductor for Integrated Voltage Regulator Applications von Ding, Yixiao, Fang, Xiangming, Wu, Rongxiang, Guo, Qili, Sin, Johnny K. O.

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A Trench-Field-Plate High-Voltage Power MOSFET von Xiao, Chao, Yang, Wentao, Liu, Yong, Zhou, Xianda, Feng, Hao, Sin, Johnny K. O.

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UIS Analysis and Characterization of the Inverted L-Shaped Source Trench Power MOSFET von Ng, J. C. W., Sin, J. K. O., Sumida, H., Toyoda, Y., Ohi, A., Tanaka, H., Nishimura, T., Ueno, K.

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