Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact von Claeys, Cor

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Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam von Uedono, Akira, Zhao, Ming, Simoen, Eddy

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On the diffusion and activation of n-type dopants in Ge von Vanhellemont, Jan, Simoen, Eddy

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On the diffusion and activation of ion-implanted n-type dopants in germanium von Simoen, Eddy, Vanhellemont, Jan

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Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors von Simoen, E., Gaillardin, M., Paillet, P., Reed, R. A., Schrimpf, R. D., Alles, M. L., El-Mamouni, F., Fleetwood, D. M., Griffoni, A., Claeys, C.

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InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models von Smets, Quentin, Verreck, Devin, Verhulst, Anne S., Rooyackers, Rita, Merckling, Clément, Van De Put, Maarten, Simoen, Eddy, Vandervorst, Wilfried, Collaert, Nadine, Thean, Voon Y., Sorée, Bart, Groeseneken, Guido, Heyns, Marc M.

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Electrical properties of extended defects in strain relaxed GeSn von Gupta, Somya, Simoen, Eddy, Loo, Roger, Shimura, Yosuke, Porret, Clement, Gencarelli, Federica, Paredis, Kristof, Bender, Hugo, Lauwaert, Johan, Vrielinck, Henk, Heyns, Marc

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Experimental Comparison Between Trigate p-TFET and p-FinFET Analog Performance as a Function of Temperature von Ghedini Der Agopian, Paula, Martino, Joao Antonio, Rooyackers, Rita, Vandooren, Anne, Simoen, Eddy, Claeys, Cor

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Defect engineering for shallow n-type junctions in germanium: Facts and fiction von Simoen, Eddy, Schaekers, Marc, Liu, Jinbiao, Luo, Jun, Zhao, Chao, Barla, Kathy, Collaert, Nadine

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On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films von Dhayalan, Sathish Kumar, Kujala, Jiri, Slotte, Jonatan, Pourtois, Geoffrey, Simoen, Eddy, Rosseel, Erik, Hikavyy, Andriy, Shimura, Yosuke, Iacovo, Serena, Stesmans, Andre, Loo, Roger, Vandervorst, Wilfried

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Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETs von Walke, Amey M., Verhulst, Anne S., Vandooren, Anne, Verreck, Devin, Simoen, Eddy, Rao, Valipe Ramgopal, Groeseneken, Guido, Collaert, Nadine, Thean, Aaron V. Y.

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Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn von Gupta, Somya, Simoen, Eddy, Loo, Roger, Madia, Oreste, Lin, Dennis, Merckling, Clement, Shimura, Yosuke, Conard, Thierry, Lauwaert, Johan, Vrielinck, Henk, Heyns, Marc

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Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs von Xiaolei Wang, Jinjuan Xiang, Kai Han, Shengkai Wang, Jun Luo, Chao Zhao, Tianchun Ye, Radamson, Henry H., Simoen, Eddy, Wenwu Wang

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Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides von Mohammed, Mazharuddin, Verhulst, Anne S., Verreck, Devin, Van de Put, Maarten, Simoen, Eddy, Sorée, Bart, Kaczer, Ben, Degraeve, Robin, Mocuta, Anda, Collaert, Nadine, Thean, Aaron, Groeseneken, Guido

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Neutron-Induced Failure in Silicon IGBTs, Silicon Super-Junction and SiC MOSFETs von Griffoni, Alessio, van Duivenbode, Jeroen, Linten, Dimitri, Simoen, Eddy, Rech, Paolo, Dilillo, Luigi, Wrobel, Frédéric, Verbist, Patrick, Groeseneken, Guido

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Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors von Kao, Kuo-Hsing, Verhulst, Anne S., Rooyackers, Rita, Douhard, Bastien, Delmotte, Joris, Bender, Hugo, Richard, Olivier, Vandervorst, Wilfried, Simoen, Eddy, Hikavyy, Andriy, Loo, Roger, Arstila, Kai, Collaert, Nadine, Thean, Aaron, Heyns, Marc M., Meyer, Kristin De

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(Invited) Random Telegraph Noise: From a Device Physicist's Dream to a Designer's Nightmare von Simoen, Eddy, Kaczer, Ben, Toledano-Luque, Maria, Claeys, Cor

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Endurance of One Transistor Floating Body RAM on UTBOX SOI von Aoulaiche, Marc, Bravaix, Alain, Simoen, Eddy, Caillat, Christian, Moonju Cho, Witters, Liesbeth, Blomme, Pieter, Fazan, Pierre, Groeseneken, Guido, Jurczak, Malgorzata

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Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification von Smets, Quentin, Verhulst, Anne S., Martens, Koen, Lin, Han Chung, Kazzi, Salim El, Verreck, Devin, Simoen, Eddy, Collaert, Nadine, Thean, Aaron, Raskin, Jean-Pierre, Heyns, Marc M.

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Refined DC and Low-Frequency Noise Characterization at Room and Cryogenic Temperatures of Vertically Stacked Silicon Nanosheet FETs von Cretu, Bogdan, Veloso, Anabela, Simoen, Eddy

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