Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications von Choi, Dooho, Lee, Dongsoo, Sim, Hyunjun, Chang, Man, Hwang, Hyunsang

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Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications von Dongsoo Lee, Hyejung Choi, Hyunjun Sim, Dooho Choi, Hyunsang Hwang, Myoung-Jae Lee, Sun-Ae Seo, Yoo, I.K.

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Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications von Hong Sik Yoon, In-Gyu Baek, Jinshi Zhao, Hyunjun Sim, Min Young Park, Hansin Lee, Gyu-Hwan Oh, Jong Chan Shin, In-Seok Yeo, U-In Chung

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Resistance-switching Characteristics of polycrystalline Nb/sub 2/O/sub 5/ for nonvolatile memory application von Sim, Hyunjun, Choi, Dooho, Lee, Dongsoo, Seo, Sunae, Lee, Myong-Jae, Yoo, In-Kyeong, Hwang, Hyunsang

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ELECTRICAL CHARACTERISTICS OF OZONE-OXIDIZED HfO2 GATE DIELECTRICS von Sim, H, Chang, H, Hwang, H

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Resistance-switching characteristics of polycrystalline Nb2O5 for nonvolatile memory application von SIM, Hyunjun, CHOI, Dooho, LEE, Dongsoo, SEO, Sunae, LEE, Myong-Jae, YOO, In-Kyeong, HWANG, Hyunsang

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Electrical Characteristics of Ozone-Oxidized HfO 2 Gate Dielectrics von Sim, Hyunjun, Chang, Hyosik, Hwang, Hyunsang

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Reverse resistance switching in polycrystalline Nb2O5 films von JO, Younghun, SIM, Hyunjun, HWANG, Hyunsang, AHN, Ken, JUNG, Myung-Hwa

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ELECTRICAL CHARACTERISTICS OF TiO2/ZrSixOy STACK GATE DIELECTRIC FOR METAL-OXIDE-SEMICONDUCTOR DEVICE APPLICATIONS von Sim, H, Jeon, S, Hwang, H

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Reverse resistance switching in polycrystalline Nb 2O 5 films von Jo, Younghun, Sim, Hyunjun, Hwang, Hyunsang, Ahn, Ken, Jung, Myung-Hwa

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Effect of deuterium postmetal annealing on the reliability characteristics of an atomic-layer-deposited HfO2/SiO2 stack gate dielectrics von Sim, Hyunjun, Hwang, Hyunsang

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Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5 von Sim, Hyunjun, Choi, Dooho, Lee, Dongsoo, Hasan, Musarrat, Samantaray, Chandan B., Hwang, Hyunsang

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ELECTRICAL AND RELIABILITY CHARACTERISTICS OF AN ULTRATHIN TaOxNy GATE DIELECTRIC PREPARED BY O3 ANNEALING von Jung, H, Sim, H, Im, K, Yang, D, Hwang, H

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Reversible resistive switching of Sr Ti O x thin films for nonvolatilememory applications von Choi, Dooho, Lee, Dongsoo, Sim, Hyunjun, Chang, Man, Hwang, Hyunsang

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Electronic structures of transitional metal aluminates as high- k gate dielectrics: first principles study von Samantaray, C.B., Sim, Hyunjun, Hwang, Hyunsang

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Reproducible resistance switching characteristics of pulsed laser-deposited polycrystalline Nb2O5 von SIM, Hyunjun, CHOI, Dooho, LEE, Dongsoo, HASAN, Musarrat, SAMANTARAY, Chandan B, HWANG, Hyunsang

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Electronic structures of transitional metal aluminates as high-k gate dielectrics: first principles study von SAMANTARAY, C. B, SIM, Hyunjun, HWANG, Hyunsang

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Resistance-switching Characteristics of polycrystalline Nb sub(2)O sub(5) for nonvolatile memory application von Sim, Hyunjun, Choi, Dooho, Lee, Dongsoo, Seo, Sunae, Lee, Myong-Jae, Yoo, In-Kyeong, Hwang, Hyunsang

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Electrical Properties of Atomic Layer Deposited HfO 2 Gate Dielectric Film Using D 2 O as Oxidant for Improved Reliability von Lee, Taeho, Ko, Han-Kyoung, Ahn, Jinho, Park, In-Sung, Sim, Hyunjun, Park, Hokyung, Hwang, Hyunsang

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Electrical Characteristics of TiO 2 /ZrSi x O y Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications von Sim, Hyunjun, Jeon, Sanghun, Hwang, Hyunsang

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