Paramagnetism in Mn/Fe implanted ZnO von Gunnlaugsson, H. P., Mølholt, T. E., Mantovan, R., Masenda, H., Naidoo, D., Dlamini, W. B., Sielemann, R., Bharuth-Ram, K., Weyer, G., Johnston, K., Langouche, G., Ólafsson, S., Gíslason, H. P., Kobayashi, Y., Yoshida, Y., Fanciulli, M.

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Magnetism at single isolated iron atoms implanted in graphite von Sielemann, R, Kobayashi, Y, Yoshida, Y, Gunnlaugsson, H P, Weyer, G

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Interstitial Fe in MgO von Mølholt, T. E., Mantovan, R., Gunnlaugsson, H. P., Svane, A., Masenda, H., Naidoo, D., Bharuth-Ram, K., Fanciulli, M., Gislason, H. P., Johnston, K., Langouche, G., Ólafsson, S., Sielemann, R., Weyer, G.

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Fe charge state adjustment in ZnO upon ion implantation von Mantovan, R, Gunnlaugsson, H P, Naidoo, D, Ólafsson, S, Johnston, K, Masenda, H, Mølholt, T E, Bharuth-Ram, K, Fanciulli, M, Gislason, H P, Langouche, G, Sielemann, R, Weyer, G, The ISOLDE Collaboration

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Defect annealing in Sb/Sn implanted diamond investigated with 119Sn Mössbauer spectroscopy von Bharuth-Ram, K., Gunnlaugsson, H.P., Masenda, H., Sielemann, R., Weyer, G., Köster, U.

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Study of intrinsic defects in semiconductors with radioactive probes von Sielemann, R

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Microscopic observation of vacancy and self-interstitial and the formation of Frenkel pairs in InSb by Mössbauer spectroscopy von Sielemann, R., Govindaraj, R., Müller, M., Wende, L., Weyer, G.

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57Fe Mössbauer studies on 57Mn ∗ implanted InP and InAs von Bharuth-Ram, K., Dlamini, W.B., Masenda, H., Naidoo, D., Gunnlaugsson, H.P., Weyer, G., Mantovan, R., Mølholt, T.E., Sielemann, R., Ólafsson, S., Langouche, G., Johnston, K.

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Temperature and dose dependence of defect complex formation with ion implanted Mn/Fe in ZnO von Mølholt, T.E., Mantovan, R., Gunnlaugsson, H.P., Bharuth-Ram, K., Fanciulli, M., Gíslason, H.P., Johnston, K., Kobayashi, Y., Langouche, G., Masenda, H., Naidoo, D., Ólafsson, S., Sielemann, R., Weyer, G.

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Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy von Gunnlaugsson, H. P., Weyer, G., Dietrich, M., Fanciulli, M., Bharuth-Ram, K., Sielemann, R.

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Erbium-related band gap states in 4H– and 6H–silicon carbide von Pasold, G., Albrecht, F., Grillenberger, J., Grossner, U., Hülsen, C., Witthuhn, W., Sielemann, R.

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Radiotracer identification of a Ta-related deep level in 4H–SiC von Grillenberger, J., Achtziger, N., Sielemann, R., Witthuhn, W.

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Deep acceptor states of platinum and iridium in 4H-silicon carbide von GRILLENBERGER, J, GROSSNER, U, SVENSSON, B. G, ALBRECHT, F, WITTHUHN, W, SIELEMANN, R

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Europium Induced Deep Levels in Hexagonal Silicon Carbide von Pasold, G., Witthuhn, W., Albrecht, F., Hülsen, C., Sielemann, R.

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Mössbauer spectroscopy on Fe impurities in germanium von Gunnlaugsson, H.P., Weyer, G., Dietrich, M., Fanciulli, M., Bharuth-Ram, K., Sielemann, R.

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Creation and annealing of defect structures in silicon-based semiconductors during and after implantations at 77–500 K von Weyer, G., Gunnlaugsson, H.P., Dietrich, M., Fanciulli, M., Bharuth-Ram, K., Sielemann, R.

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Vacancies and Self-Interstitials in Germanium Observed by Perturbed Angular Correlation Spectroscopy von Haesslein, Helmut, Sielemann, Rainer, Zistl, Christian

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On the kinetics of the formation of interstitial Fe–vacancy pairs in silicon at high temperatures von Gunnlaugsson, H.P., Weyer, G., Christensen, N.E., Dietrich, M., Fanciulli, M., Bharuth-Ram, K., Sielemann, R., Svane, A., ISOLDE Collaboration, the

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Microscopic observation of interaction between self-interstitials and In-acceptors in germanium von Sielemann, R, Haesslein, H, Zistl, Ch

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Vacancies and self-interstitials in germanium: a picture derived from radioactive probes von Sielemann, R., Hässlein, H., Zistl, Ch, Müller, M., Stadler, L., Emtsev, V.V.

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