Al2O3/InGaAs interface passivation by fluorine-containing anodic layers von Aksenov, M. S., Valisheva, N. A., Gorshkov, D. V., Sidorov, G. Y., Prosvirin, I. P., Gutakovskii, A. K.

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An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy von Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y., Yakushev, M. V.

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Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al2O3 passivation von Voitsekhovskii, A V, Nesmelov, S N, Dzyadukh, S M, Dvoretsky, S A, Mikhailov, N N, Sidorov, G Y, Yakushev, M V

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Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures von Voitsekhovskii, A V, Nesmelov, S N, Dzyadukh, S M, Dvoretsky, S A, Mikhailov, N N, Sidorov, G Y, Yakushev, M V

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Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques von Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y., Yakushev, M. V., Marin, D. V.

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Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques von Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y., Yakushev, M. V., Marin, D. V.

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Wet Chemical Methods of HgCdTe Surface Treatment von Zakirov, E. R., Kesler, V. G., Sidorov, G. Y., Golyashov, V. A., Tereshchenko, O. E., Marin, D. V., Yakushev, M. V.

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Admittance studies of modification of HgCdTe surface properties with ion implantation and thermal annealing von Korotaev, A.G., Voitsekhovskii, A.V., Izhnin, I.I., Mynbaev, K.D., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Y.

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Admittance of barrier nanostructures based on MBE HgCdTe von Izhnin, I. I., Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y., Yakushev, M. V.

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Admittance dependences of the mid-wave infrared barrier structure based on HgCdTe grown by molecular beam epitaxy von Voitsekhovskii, A V, Nesmelov, S N, Dzyadukh, S M, Dvoretsky, S A, Mikhailov, N N, Sidorov, G Y, Yakushev, M V

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Electrical characterization of insulator-semiconductor systems based on graded band gap MBE HgCdTe with atomic layer deposited Al2O3 films for infrared detector passivation von Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Yakushev, M.V., Sidorov, G.Y.

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Diffusion-limited dark currents in mid-wave infrared HgCdTe-based nBn structures with Al 2 O 3 passivation von Voitsekhovskii, A V, Nesmelov, S N, Dzyadukh, S M, Dvoretsky, S A, Mikhailov, N N, Sidorov, G Y, Yakushev, M V

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Nanowired structure, optical properties and conduction band offset of RF magnetron-deposited n-Si\In2O3:Er films von Feklistov, K V, Lemzyakov, A G, Prosvirin, I P, Gismatulin, A A, Shklyaev, A A, Zhivodkov, Y A, Krivyakin, G, Komonov, A I, Kozhukhov, S, Spesivsev, E V, Gulyaev, D V, Abramkin, D S, Pugachev, A M, Esaev, D G, Sidorov, G Yu

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Unipolar superlattice structures based on MBE HgCdTe for infrared detection von Izhnin, I. I., Kurbanov, K. R., Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y.

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Properties of MBE CdxHg1−xTe/GaAs structures modified by ion-beam milling von Bogoboyashchyy, V. V., Dvoretsky, S. A., Izhnin, I. I., Mikhailov, N. N., Sidorov, Yu. G., Sizov, F. F., Varavin, V. S., Yudenkov, V. A.

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Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxy von Sabinina, I.V., Gutakovsky, A.K., Sidorov, Yu.G., Latyshev, A.V.

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Defect formation during growth of CdTe(111) and HgCdTe films by molecular beam epitaxy von Sabinina, I.V., Gutakovsky, A.K., Sidorov, Yu.G., Dvoretsky, S.A., Kuzmin, V.D.

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In situ ellipsometry for control of Hg1−xCdxTe nanolayer structures and inhomogeneous layers during MBE growth von Shvets, V.A., Rykhlitski, S.V., Spesivtsev, E.V., Aulchenko, N.A., Mikhailov, N.N., Dvoretsky, S.A., Sidorov, Yu.G., Smirnov, R.N.

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Molecular-beam epitaxy of mercury-cadmium-telluride solid solutions on alternative substrates von Sidorov, Yu. G., Dvoretskii, S. A., Varavin, V. S., Mikhailov, N. N., Yakushev, M. V., Sabinina, I. V.

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Investigation and characterization of Hg1−xCdxTe epilayers von Tsybrii-Ivasiv, Z.F., Darchuk-Korovina, L.O., Sizov, F.F., Golenkov, O.G., Bilevych, Ye.O., Sidorov, Yu.G., Varavin, V.S.

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