Photon far-infrared and submillimeter array detectors von Neizvestnyi, I G, Klimov, A E, Shumsky, V N

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PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity von Ishchenko, D. V., Klimov, A. E., Shumsky, V. N., Epov, V. S.

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Quantum dots of Ge in a GaAs/ZnSe/Ge unstrained heterosystem: fabrication and properties von Neizvestny, I G, Suprun, S P, Shumsky, V N, Talochkin, A B, Fedosenko, E V, Burbaev, T M, Kurbatov, V A

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Three-spectrum multielement photodetector device von Neizvestny, I. G., Shumsky, V. N.

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Specific temperature-related features of photoconductivity relaxation in PbSnTe:In films under interband excitation von Akimov, A. N., Klimov, A. E., Neizvestny, I. G., Shumsky, V. N., Epov, V. S.

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Injection currents in narrow-gap (Pb1−x SnxTe):In insulators von Akimov, A. N., Erkov, V. G., Klimov, A. E., Molodtsova, E. L., Suprun, S. P., Shumsky, V. N.

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Study of the Photoelectric Properties of Ge Quantum Dots in a ZnSe Matrix on GaAs von Neizvestny, I. G.

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Effect of electron trapping centers on electrical and photoelectric properties of PbSnTe : In von Klimov, A. E., Shumsky, V. N.

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Electric and photoelectric properties of GaAs/ZnSe-Ge/ZnSe/Al structures with Ge quantum dots von Borodin, I. Yu, Litvinova, I. A., Neizvestny, I. G., Prozorov, A. V., Suprun, S. P., Talochkin, A. B., Sherstyakova, V. N., Shumsky, V. N.

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Industrial prospects of Pb1 − x Sn x Te:In with x > 0.3 solid solutions for photodetectors with extended sensitivity spectral range von Akimov, A. N., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Pashchin, N. S., Sherstyakova, V. N., Shumsky, V. N.

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Terahertz detectors based on Pb1−xSnxTe:In films von Akimov, A. N., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Pashchin, N. S., Sherstyakova, V. N., Shumsky, V. N., Epov, V. S.

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Terahertz detectors based on Pb1−x Sn x Te:In films von Akimov, A. N., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Pashchin, N. S., Sherstyakova, V. N., Shumsky, V. N., Epov, V. S.

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Effect of the material of injecting contacts on the CVCs of Pb1 − x Sn x Te:In films von Akimov, A. N., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Pashchin, N. S., Sherstyakova, V. N., Shumsky, V. N.

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Effect of the material of injecting contacts on the CVCs of Pb1 − xSnxTe:In films von Akimov, A. N., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Pashchin, N. S., Sherstyakova, V. N., Shumsky, V. N.

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Industrial prospects of Pb1 − xSnxTe:In with x > 0.3 solid solutions for photodetectors with extended sensitivity spectral range von Akimov, A. N., Ishchenko, D. V., Klimov, A. E., Neizvestny, I. G., Pashchin, N. S., Sherstyakova, V. N., Shumsky, V. N.

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Germanium quantum dots in an unstrained GaAs/ZnSe/Ge/ZnSe heterosystem von Neizvestnyi, I. G., Suprun, S. P., Talochkin, A. B., Shumsky, V. N., Efanov, A. V.

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Surface LTT — film structure with In doping von Klimov, A.E., Krivopalov, D.V., Neizvestnyi, I.G., Shumsky, V.N., Petikov, N.I., Torlin, M.A., Fedosenko, E.V.

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Thin-film PbSnTe:In/BaF2/CaF2/Si structures for monolithic matrix photodetectors operating in the far infrared range von Akimov, A. N., Belenchuk, A. V., Klimov, A. É., Kachanova, M. M., Neizvestny, I. G., Suprun, S. P., Shapoval, O. M., Sherstyakova, V. N., Shumsky, V. N.

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Submillimeter matrix photosensitive device on PbSnTe : In films von Akimov, A. N., Klimov, A. E., Shumsky, V. N., Aseev, A. L.

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High-dielectric-constant medium used to increase qubit spacing von Klimov, A. E., Nadolinnyi, V. A., Neizvestny, I. G., Suprun, S. P., Tsidulko, Yu. A., Shumsky, V. N.

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