Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes von Nakamura, Shuji

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Background Story of the Invention of Efficient InGaN Blue-Light-Emitting Diodes (Nobel Lecture) von Nakamura, Shuji

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Current Status of GaN-Based Solid-State Lighting von Nakamura, Shuji

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Background story of the invention of efficient blue InGaN light emitting diodes (Nobel Lecture) von Nakamura, Shuji

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History of Gallium-Nitride-Based Light-Emitting Diodes for Illumination von Nakamura, Shuji, Krames, M. R.

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Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting von Feezell, Daniel, Nakamura, Shuji

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Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers von Chan, Philip, DenBaars, Steven P., Nakamura, Shuji

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Review-Progress in High Performance III-Nitride Micro-Light-Emitting Diodes von Wong, Matthew S., Nakamura, Shuji, DenBaars, Steven P.

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High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition von Wong, Matthew S, Hwang, David, Alhassan, Abdullah I, Lee, Changmin, Ley, Ryan, Nakamura, Shuji, DenBaars, Steven P

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Sustained high external quantum efficiency in ultrasmall blue III-nitride micro-LEDs von Hwang, David, Mughal, Asad, Pynn, Christopher D., Nakamura, Shuji, DenBaars, Steven P.

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The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes von Nakamura, Shuji

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High luminous flux from single crystal phosphor-converted laser-based white lighting system von Cantore, Michael, Pfaff, Nathan, Farrell, Robert M, Speck, James S, Nakamura, Shuji, DenBaars, Steven P

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Semipolar (}\bar}}\bar}}) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting von Feezell, D. F., Speck, J. S., DenBaars, S. P., Nakamura, S.

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Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays von DenBaars, Steven P., Feezell, Daniel, Kelchner, Katheryn, Pimputkar, Siddha, Pan, Chi-Chen, Yen, Chia-Chen, Tanaka, Shinichi, Zhao, Yuji, Pfaff, Nathan, Farrell, Robert, Iza, Mike, Keller, Stacia, Mishra, Umesh, Speck, James S., Nakamura, Shuji

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4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication von Lee, Changmin, Zhang, Chong, Cantore, Michael, Farrell, Robert M, Oh, Sang Ho, Margalith, Tal, Speck, James S, Nakamura, Shuji, Bowers, John E, DenBaars, Steven P

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Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors von Lee, Changmin, Shen, Chao, Cozzan, Clayton, Farrell, Robert M, Speck, James S, Nakamura, Shuji, Ooi, Boon S, DenBaars, Steven P

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Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates von Pasayat, Shubhra S., Gupta, Chirag, Wong, Matthew S., Wang, Yifan, Nakamura, Shuji, Denbaars, Steven P., Keller, Stacia, Mishra, Umesh K.

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Hybrid tunnel junction contacts to III-nitride light-emitting diodes von Young, Erin C., Yonkee, Benjamin P., Wu, Feng, Oh, Sang Ho, DenBaars, Steven P., Nakamura, Shuji, Speck, James S.

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Robust thermal performance of Sr2Si5N8:Eu2+: An efficient red emitting phosphor for light emitting diode based white lighting von Brinkley, Stuart E., Pfaff, Nathan, Denault, Kristin A., Zhang, Zhijun, (Bert) Hintzen, H. T., Seshadri, Ram, Nakamura, Shuji, DenBaars, Steven P.

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Measurement of electron overflow in 450 nm InGaN light-emitting diode structures von Vampola, Kenneth J., Iza, Michael, Keller, Stacia, DenBaars, Steven P., Nakamura, Shuji

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