Interband absorption strength in long-wave infrared type-II superlattices with small and large superlattice periods compared to bulk materials von Vurgaftman, I., Belenky, G., Lin, Y., Donetsky, D., Shterengas, L., Kipshidze, G., Sarney, W. L., Svensson, S. P.

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GaSb-based heterostructure with buried vacuum pocket photonic crystal layer von Liu, R, Shterengas, L, Stein, A, Kipshidze, G, Jiang, J, Hosoda, T, Belenky, G

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InAsSb-based heterostructures for infrared light modulation von Donetsky, D., Liu, J., Kipshidze, G., Shterengas, L., Belenky, G., Sarney, W. L., Svensson, S. P.

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Dual wavelength operation of the GaSb-based Y-branch distributed Bragg reflector lasers near 2.1 μ m von Jiang, J, Shterengas, L, Hosoda, T, Stein, A, Belyanin, A, Kipshidze, G, Belenky, G

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Diode lasers emitting near 3.44 μm in continuous-wave regime at 300K von HOSODA, T, KIPSHIDZE, G, SHTERENGAS, L, BELENKY, G

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Lattice parameter engineering for III–V long wave infrared photonics von Belenky, G, Lin, Y, Shterengas, L, Donetsky, D, Kipshidze, G, Suchalkin, S

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Electronic properties of unstrained unrelaxed narrow gap InAsxSb1−x alloys von Suchalkin, S, Ludwig, J, Belenky, G, Laikhtman, B, Kipshidze, G, Lin, Y, Shterengas, L, Smirnov, D, Luryi, S, Sarney, W L, Svensson, S P

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Extremely small bandgaps, engineered by controlled multi-scale ordering in InAsSb von Sarney, W. L., Svensson, S. P., Lin, Y., Donetsky, D., Shterengas, L., Kipshidze, G., Belenky, G.

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Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 [mu]m von Hosoda, T, Fradet, M, Frez, C, Shterengas, L, Sander, S, ouhar, S, Belenky, G

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Distributed feedback 3.27 mu m diode lasers with continuous-wave output power above 15 mW at room temperature von Liang, R, Hosoda, T, Shterengas, L, Stein, A, Lu, M, Kipshidze, G, Belenky, G

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Laterally coupled distributed feedback cascade diode lasers emitting near 2.9 µm von Hosoda, T, Fradet, M, Frez, C, Shterengas, L, Sander, S, Forouhar, S, Belenky, G

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AlInAsSb for M-LWIR detectors von Sarney, W.L., Svensson, S.P., Wang, D., Donetsky, D., Kipshidze, G., Shterengas, L., Lin, Y., Belenky, G.

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Narrow ridge GaSb-based cascade diode lasers fabricated by methane–hydrogen reactive ion etching von Wang, M, Hosoda, T, Shterengas, L, Kipshidze, G, Hwang, D.J, Belenky, G

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Room temperature operated diffraction limited λ ≃ 3 µm diode lasers with 37 mW of continuous-wave output power von Hosoda, T, Liang, R, Kipshidze, G, Shterengas, L, Belenky, G

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Highly efficient holmium fibre laser diode pumped at 1.94 μm von LI, R, LI, J, SHTERENGAS, L, JACKSON, S. D

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Distributed feedback 3.27 µm diode lasers with continuous-wave output power above 15 mW at room temperature von Liang, R, Hosoda, T, Shterengas, L, Stein, A, Lu, M, Kipshidze, G, Belenky, G

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Luminescence and carrier concentration in Sb-containing narrow bandgap quantum wells under optical excitation von Selivanov, A V, Vinnichenko, M Ya, Makhov, I S, Firsov, D A, Vorobjev, L E, Shterengas, L, Belenky, G

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Photoluminescence in InGaAsSb/AlGaAsSb quantum wells: impact of nonradiative recombination von Vinnichenko, M Ya, Makhov, I S, Selivanov, A V, Firsov, D A, Vorobjev, L E, Shterengas, L, Belenky, G

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Diode lasers emitting at 3 μm with 300 mW of continuous-wave output power von SHTERENGAS, L, KIPSHIDZE, G, HOSODA, T, CHEN, J, BELENKY, G

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Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves von Kim, J. G., Shterengas, L., Martinelli, R. U., Belenky, G. L., Garbuzov, D. Z., Chan, W. K.

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