Suchergebnisse - SHRETER, YURI GEORGIEVICH

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SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH AN AXIS OF SYMMETRY von Rebane, Yury Toomasovich, Shreter, Yuri Georgievich, Mironov, Aleksey Vladimirovich

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METHOD OF LASER SEPARATION OF THE EPITAXIAL FILM OR OF THE EPITAXIAL FILM LAYER FROM THE GROWTH SUBSTRATE OF THE EPITAXIAL SEMICONDUCTOR STRUCTURE (VARIATIONS) von Rebane, Yury Toomasovich, Shreter, Yuri Georgievich, Mironov, Aleksey Vladimirovich

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METHOD OF SEPARATING SURFACE LAYER OF SEMICONDUCTOR CRYSTAL USING A LASER BEAM PERPENDICULAR TO THE SEPARATING PLANE von SHRETER, YURI GEORGIEVICH, REBANE, YURI TOOMASOVICH, MIRONOV, ALEKSEY VLADIMIROVICH

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METHOD OF SEPARATING SURFACE LAYER OF SEMICONDUCTOR CRYSTAL USING A LASER BEAM PERPENDICULAR TO THE SEPARATING PLANE von Shreter, Yuri Georgievich, Rebane, Yuri Toomasovich, Mironov, Aleksey Vladimirovich

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LIGHT-EMITTING DEVICE WITH HETEROPHASE BOUNDARIES von Shreter, Yuri Georgievich, Rebane, Yuri Toomasovich, Mironov, Aleksey Vladimirovich

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SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH AN AXIS OF SYMMETRY von Rebane, Yury Toomasovich, Shreter, Yuri Georgievich, Mironov, Aleksey Vladimirovich

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Light-emitting device with heterophase boundaries von MIRONOV ALEKSEY VLADIMIROVICH, REBANE YURI TOOMASOVICH, SHRETER YURI GEORGIEVICH

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Method of Laser Separation of the Epitaxial Film or of the Epitaxial Film Layer from the Growth Substrate of the Epitaxial Semiconductor Structure (Variations) von MIRONOV ALEKSEY VLADIMIROVICH, REBANE YURI TOOMASOVICH, SHRETER YURI GEORGIEVICH

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METHOD OF LASER SEPARATION OF THE EPITAXIAL FILM OR OF THE EPITAXIAL FILM LAYER FROM THE GROWTH SUBSTRATE OF THE EPITAXIAL SEMICONDUCTOR STRUCTURE (VARIATIONS) von SHRETER, YURI GEORGIEVICH, REBANE, YURY TOOMASOVICH, MIRONOV, ALEKSEY VLADIMIROVICH

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METHOD OF SEPARATING SURFACE LAYER OF SEMICONDUCTOR CRYSTAL USING A LASER BEAM PERPENDICULAR TO THE SEPARATING PLANE von SHRETER, YURI GEORGIEVICH, REBANE, YURI TOOMASOVICH, MIRONOV, ALEKSEY VLADIMIROVICH

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Method of Separating Surface Layer of Semiconductor Crystal Using a Laser Beam Perpendicular to the Separating Plane von MIRONOV ALEKSEY VLADIMIROVICH, REBANE YURI TOOMASOVICH, SHRETER YURI GEORGIEVICH

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LIGHT-EMITTING DEVICE WITH HETEROPHASE BOUNDARIES von SHRETER, YURI GEORGIEVICH, REBANE, YURI TOOMASOVICH, MIRONOV, ALEKSEY VLADIMIROVICH

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LIGHT-EMITTING DEVICE WITH HETEROPHASE BOUNDARIES von MIRONOV ALEKSEY VLADIMIROVICH, REBANE YURI TOOMASOVICH, SHRETER YURI GEORGIEVICH

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LIGHT-EMITTING DEVICE WITH HETEROPHASE BOUNDARIES von SHRETER, YURI GEORGIEVICH, REBANE, YURI TOOMASOVICH, MIRONOV, ALEKSEY VLADIMIROVICH

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SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH AN AXIS OF SYMMETRY von Rebane, Yury Toomasovich, Shreter, Yuri Georgievich, Mironov, Aleksey Vladimirovich

METHOD OF LASER SEPARATION OF THE EPITAXIAL FILM OR OF THE EPITAXIAL FILM LAYER FROM THE GROWTH SUBSTRATE OF THE EPITAXIAL SEMICONDUCTOR STRUCTURE (VARIATIONS) von Rebane, Yury Toomasovich, Shreter, Yuri Georgievich, Mironov, Aleksey Vladimirovich

METHOD OF SEPARATING SURFACE LAYER OF SEMICONDUCTOR CRYSTAL USING A LASER BEAM PERPENDICULAR TO THE SEPARATING PLANE von SHRETER, YURI GEORGIEVICH, REBANE, YURI TOOMASOVICH, MIRONOV, ALEKSEY VLADIMIROVICH

METHOD OF SEPARATING SURFACE LAYER OF SEMICONDUCTOR CRYSTAL USING A LASER BEAM PERPENDICULAR TO THE SEPARATING PLANE von Shreter, Yuri Georgievich, Rebane, Yuri Toomasovich, Mironov, Aleksey Vladimirovich

LIGHT-EMITTING DEVICE WITH HETEROPHASE BOUNDARIES von Shreter, Yuri Georgievich, Rebane, Yuri Toomasovich, Mironov, Aleksey Vladimirovich

SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH AN AXIS OF SYMMETRY von Rebane, Yury Toomasovich, Shreter, Yuri Georgievich, Mironov, Aleksey Vladimirovich

Light-emitting device with heterophase boundaries von MIRONOV ALEKSEY VLADIMIROVICH, REBANE YURI TOOMASOVICH, SHRETER YURI GEORGIEVICH

Method of Laser Separation of the Epitaxial Film or of the Epitaxial Film Layer from the Growth Substrate of the Epitaxial Semiconductor Structure (Variations) von MIRONOV ALEKSEY VLADIMIROVICH, REBANE YURI TOOMASOVICH, SHRETER YURI GEORGIEVICH

METHOD OF LASER SEPARATION OF THE EPITAXIAL FILM OR OF THE EPITAXIAL FILM LAYER FROM THE GROWTH SUBSTRATE OF THE EPITAXIAL SEMICONDUCTOR STRUCTURE (VARIATIONS) von SHRETER, YURI GEORGIEVICH, REBANE, YURY TOOMASOVICH, MIRONOV, ALEKSEY VLADIMIROVICH

METHOD OF SEPARATING SURFACE LAYER OF SEMICONDUCTOR CRYSTAL USING A LASER BEAM PERPENDICULAR TO THE SEPARATING PLANE von SHRETER, YURI GEORGIEVICH, REBANE, YURI TOOMASOVICH, MIRONOV, ALEKSEY VLADIMIROVICH

Method of Separating Surface Layer of Semiconductor Crystal Using a Laser Beam Perpendicular to the Separating Plane von MIRONOV ALEKSEY VLADIMIROVICH, REBANE YURI TOOMASOVICH, SHRETER YURI GEORGIEVICH

LIGHT-EMITTING DEVICE WITH HETEROPHASE BOUNDARIES von SHRETER, YURI GEORGIEVICH, REBANE, YURI TOOMASOVICH, MIRONOV, ALEKSEY VLADIMIROVICH

LIGHT-EMITTING DEVICE WITH HETEROPHASE BOUNDARIES von MIRONOV ALEKSEY VLADIMIROVICH, REBANE YURI TOOMASOVICH, SHRETER YURI GEORGIEVICH

LIGHT-EMITTING DEVICE WITH HETEROPHASE BOUNDARIES von SHRETER, YURI GEORGIEVICH, REBANE, YURI TOOMASOVICH, MIRONOV, ALEKSEY VLADIMIROVICH

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