Ion energy distribution control in single and dual frequency capacitive plasma sources von Lee, J K, Manuilenko, O V, Babaeva, N Yu, Kim, H C, Shon, J W

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Analytic model for a dual frequency capacitive discharge von Kim, H. C., Lee, J. K., Shon, J. W.

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CPNE7 Induces Biological Dentin Sealing in a Dentin Hypersensitivity Model von Park, S.H., Lee, Y.S., Lee, D.S., Park, J.C., Kim, R., Shon, W.J.

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Tertiary Dentin Formation after Indirect Pulp Capping Using Protein CPNE7 von Choung, H.W., Lee, D.S., Lee, Ji-Hyun, Shon, W.J., Lee, Jong-Ho, Ku, Y., Park, J.C.

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Capacitively coupled plasma source operating in Xe/Ar mixtures von Yu Babaeva, N, Lee, J K, Shon, J W

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Investigation of anisotropic wafer bending curvature in a-plane GaN films grown on r-plane sapphire substrates von Shon, J.W., Ohta, J., Inoue, S., Kobayashi, A., Fujioka, H.

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Discharge asymmetry induced by the pulsed radio-frequency current von Kim, H. C., Lee, J. K., Shon, J. W.

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Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O2/N2/Ar and H2/N2/Ar inductively coupled plasmas von PARK, Y. R, KWON, B. S, JUNG, C. Y, HEO, W, LEE, N.-E, SHON, J. W

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Retention of uranium(VI) by laumontite, a fracture-filling material of granite von Baik, M. H., Lee, S. Y., Shon, W. J.

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Infinitely high etch selectivity during CH2F2/H2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a-C von Kim, J. S., Kwon, B. S., Heo, W., Jung, C. R., Park, J. S., Shon, J. W., Lee, N.-E.

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Highly selective etching of silicon nitride to physical-vapor-deposited a-C mask in dual-frequency capacitively coupled CH2F2∕H2 plasmas von Kim, J. S., Kwon, B. S., Heo, W., Jung, C. R., Park, J. S., Shon, J. W., Lee, N.-E.

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Two-dimensional kinetic and three-dimensional fluid-radiation transport simulations of plasma display panel von YANG, S. S, LEE, J. K, KO, S. W, KIM, H. C, SHON, J. W

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Inductively coupled plasma etching of chemical-vapor-deposited amorphous carbon in N2/H2/Ar chemistries von Lee, Nae-Eung, Lee, Hag Joo, Kwon, Bong Soo, Park, Young Rok, Ahn, Joung-Ho, Kim, Jin Sung, Shon, J. W.

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Oxygen ion energy distribution: Role of ionization, resonant, and nonresonant charge-exchange collisions von Babaeva, N. Yu, Lee, J. K., Shon, J. W., Hudson, E. A.

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Simulation of chemical downstream etch systems : Correlation of the effects of operating conditions on wafer etch rate and uniformity von VOSEN, S. R, MEEKS, E, LARSON, R. S, SHON, J. W

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Study on Fluorine Incorporation during Etch Step for HDP-CVD Oxide Gap-Filling of Nano-Scale Shallow-Trench Isolation von Kim, H. T., Kwon, B. S., Kim, S. I., Lee, N.-E., You, J. H., Han, J. H., Shon, J. W.

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Comparison of line edge roughness and profile angles of chemical vapor deposited amorphous carbon etched in O 2/N 2/Ar and H 2/N 2/Ar inductively coupled plasmas von Park, Y.R., Kwon, B.S., Jung, C.Y., Heo, W., Lee, N.-E., Shon, J.W.

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A comprehensive method for calibration of volumetric positioning accuracy of CNC-machines von Lee, Eung-Suk, Suh, Suk-Hwan, Shon, Jin-Wook

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The effects of primer precuring on the shear bond strength between gold alloy surfaces and metal brackets von Shon, Won-Jun, Kim, Tae-Woo, Chung, Shin-Hye, Jung, Min-Ho

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Ultrahigh Selective Etching of SiO[sub 2] Using an Amorphous Carbon Mask in Dual-Frequency Capacitively Coupled C[sub 4]F[sub 8]/CH[sub 2]F[sub 2]/O[sub 2]/Ar Plasmas von Kwon, B. S., Kim, J. S., Lee, N.-E., Shon, J. W.

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