Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers von Saito, Yoshiaki, Tezuka, Nobuki, Ikeda, Shoji, Endoh, Tetsuo

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Synthetic antiferromagnetic layer based on Pt/Ru/Pt spacer layer with 1.05 nm interlayer exchange oscillation period for spin–orbit torque devices von Saito, Yoshiaki, Ikeda, Shoji, Endoh, Tetsuo

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Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing von Hanyu, Takahiro, Endoh, Tetsuo, Suzuki, Daisuke, Koike, Hiroki, Ma, Yitao, Onizawa, Naoya, Natsui, Masanori, Ikeda, Shoji, Ohno, Hideo

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Atomic-Scale Structure and Local Chemistry of CoFeB–MgO Magnetic Tunnel Junctions von Wang, Zhongchang, Saito, Mitsuhiro, McKenna, Keith P, Fukami, Shunsuke, Sato, Hideo, Ikeda, Shoji, Ohno, Hideo, Ikuhara, Yuichi

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Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system von Saito, Yoshiaki, Ikeda, Shoji, Endoh, Tetsuo

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Large spin Hall effect and increase in perpendicular magnetic anisotropy in artificially synthesized amorphous W/Hf multilayer/CoFeB system von Saito, Yoshiaki, Tezuka, Nobuki, Ikeda, Shoji, Endoh, Tetsuo

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Effects of sulfate concentration on anaerobic treatment of wastewater containing monoethanolamine using an up-flow anaerobic sludge blanket reactor von Takemura, Yasuyuki, Aoki, Masataka, Danshita, Tsuyoshi, Iguchi, Akinori, Ikeda, Shoji, Miyaoka, Yuma, Sumino, Haruhiko, Syutsubo, Kazuaki

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Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers von Sinha, Jaivardhan, Hayashi, Masamitsu, Kellock, Andrew J., Fukami, Shunsuke, Yamanouchi, Michihiko, Sato, Hideo, Ikeda, Shoji, Mitani, Seiji, Yang, See-hun, Parkin, Stuart S. P., Ohno, Hideo

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Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition von Natsui, Masanori, Tamakoshi, Akira, Honjo, Hiroaki, Watanabe, Toshinari, Nasuno, Takashi, Zhang, Chaoliang, Tanigawa, Takaho, Inoue, Hirofumi, Niwa, Masaaki, Yoshiduka, Toru, Noguchi, Yasuo, Yasuhira, Mitsuo, Ma, Yitao, Shen, Hui, Fukami, Shunsuke, Sato, Hideo, Ikeda, Shoji, Ohno, Hideo, Endoh, Tetsuo, Hanyu, Takahiro

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Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper von Yamanouchi, Michihiko, Chen, Lin, Kim, Junyeon, Hayashi, Masamitsu, Sato, Hideo, Fukami, Shunsuke, Ikeda, Shoji, Matsukura, Fumihiro, Ohno, Hideo

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W thickness dependence of spin Hall effect for (W/Hf)-multilayer electrode/CoFeB/MgO systems with flat and highly (100) oriented MgO layer von Saito, Yoshiaki, Tezuka, Nobuki, Ikeda, Shoji, Endoh, Tetsuo

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Enhancement of current to spin-current conversion and spin torque efficiencies in a synthetic antiferromagnetic layer based on a Pt/Ir/Pt spacer layer von Saito, Yoshiaki, Ikeda, Shoji, Endoh, Tetsuo

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Micromagnetic simulation of the temperature dependence of the switching energy barrier using string method assuming sidewall damages in perpendicular magnetized magnetic tunnel jun... von Naganuma, Hiroshi, Sato, Hideo, Ikeda, Shoji, Endoh, Tetsuo

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Novel Method of Evaluating Accurate Thermal Stability for MTJs Using Thermal Disturbance and its Demonstration for Single-/Double-Interface p-MTJ von Saito, Takashi, Ito, Kenchi, Honjo, Hiroaki, Ikeda, Shoji, Endoh, Tetsuo

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Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions von Matsunaga, Shoun, Hayakawa, Jun, Ikeda, Shoji, Miura, Katsuya, Hasegawa, Haruhiro, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro

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Spin Hall effect investigated by spin Hall magnetoresistance in Pt100−xAux/CoFeB systems von Saito, Yoshiaki, Tezuka, Nobuki, Ikeda, Shoji, Sato, Hideo, Endoh, Tetsuo

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Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction von Natsui, Masanori, Suzuki, Daisuke, Sakimura, Noboru, Nebashi, Ryusuke, Tsuji, Yukihide, Morioka, Ayuka, Sugibayashi, Tadahiko, Miura, Sadahiko, Honjo, Hiroaki, Kinoshita, Keizo, Ikeda, Shoji, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro

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Domain Wall Motion Device for Nonvolatile Memory and Logic - Size Dependence of Device Properties von Fukami, Shunsuke, Yamanouchi, Michihiko, Ikeda, Shoji, Ohno, Hideo

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Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature von Hayakawa, Jun, Ikeda, Shoji, Matsukura, Fumihiro, Takahashi, Hiromasa, Ohno, Hideo

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Influence of sidewall damage on thermal stability in quad-CoFeB/MgO interfaces by micromagnetic simulation von Naganuma, Hiroshi, Honjo, Hiroaki, Kaneta, Chioko, Nishioka, Koichi, Ikeda, Shoji, Endoh, Tetsuo

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