Measurement of ultrafast carrier dynamics in epitaxial graphene von Dawlaty, Jahan M., Shivaraman, Shriram, Chandrashekhar, Mvs, Rana, Farhan, Spencer, Michael G.

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Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene von George, Paul A, Strait, Jared, Dawlaty, Jahan, Shivaraman, Shriram, Chandrashekhar, Mvs, Rana, Farhan, Spencer, Michael G

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Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible von Dawlaty, Jahan M., Shivaraman, Shriram, Strait, Jared, George, Paul, Chandrashekhar, Mvs, Rana, Farhan, Spencer, Michael G., Veksler, Dmitry, Chen, Yunqing

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Very Slow Cooling Dynamics of Photoexcited Carriers in Graphene Observed by Optical-Pump Terahertz-Probe Spectroscopy von Strait, Jared H, Wang, Haining, Shivaraman, Shriram, Shields, Virgil, Spencer, Michael, Rana, Farhan

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Ultrafast relaxation dynamics of hot optical phonons in graphene von Wang, Haining, Strait, Jared H., George, Paul A., Shivaraman, Shriram, Shields, Virgil B., Chandrashekhar, Mvs, Hwang, Jeonghyun, Rana, Farhan, Spencer, Michael G., Ruiz-Vargas, Carlos S., Park, Jiwoong

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van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst von Hwang, Jeonghyun, Kim, Moonkyung, Campbell, Dorr, Alsalman, Hussain A, Kwak, Joon Young, Shivaraman, Shriram, Woll, Arthur R, Singh, Arunima K, Hennig, Richard G, Gorantla, Sandeep, Rümmeli, Mark H, Spencer, Michael G

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Thickness Estimation of Epitaxial Graphene on SiC Using Attenuation of Substrate Raman Intensity von Shivaraman, Shriram, Chandrashekhar, M. V. S., Boeckl, John J., Spencer, Michael G.

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Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD) von Hwang, Jeonghyun, Shields, Virgil B., Thomas, Christopher I., Shivaraman, Shriram, Hao, Dong, Kim, Moonkyung, Woll, Arthur R., Tompa, Gary S., Spencer, Michael G.

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Raman spectroscopy and electrical transport studies of free-standing epitaxial graphene: Evidence of an AB-stacked bilayer von Shivaraman, Shriram, Jobst, Johannes, Waldmann, Daniel, Weber, Heiko B., Spencer, Michael G.

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Emission of terahertz radiation from SiC von Strait, Jared H., George, Paul A., Dawlaty, Jahan, Shivaraman, Shriram, Chandrashekhar, Mvs, Rana, Farhan, Spencer, Michael G.

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Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene von Rana, Farhan, George, Paul A., Strait, Jared H., Dawlaty, Jahan, Shivaraman, Shriram, Chandrashekhar, Mvs, Spencer, Michael G.

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Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide von Shivaraman, Shriram, Herman, Lihong H., Rana, Farhan, Park, Jiwoong, Spencer, Michael G.

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Ultra-High‑k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p‑Type High-Performance Transistors von Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J., Maxey, Kirby, O’Brien, Kevin P., Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa Ekin, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan, Oni, Adedapo, Putna, Steve, Clendenning, Scott B., Metz, Matthew, Radosavljevic, Marko, Avci, Uygar, Young, Ian A.

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Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors von Debashis, Punyashloka, Ryu, Hojoon, Steinhardt, Rachel, Buragohain, Pratyush, Plombon, John J, Maxey, Kirby, O'Brien, Kevin P, Kim, Raseong, Sen Gupta, Arnab, Rogan, Carly, Lux, Jennifer, Tung, I-Cheng, Adams, Dominique, Gulseren, Melisa, Verma Penumatcha, Ashish, Shivaraman, Shriram, Li, Hai, Zhong, Ting, Harlson, Shane, Tronic, Tristan, Oni, Adedapo, Putna, Steve, Clendenning, Scott B, Metz, Matthew, Radosavljevic, Marko, Avci, Uygar, Young, Ian A

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Free-Standing Epitaxial Graphene von Shivaraman, Shriram, Barton, Robert A, Yu, Xun, Alden, Jonathan, Herman, Lihong, Chandrashekhar, MVS, Park, Jiwoong, McEuen, Paul L, Parpia, Jeevak M, Craighead, Harold G, Spencer, Michael G

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Measurement of the optical absorption spectra of epitaxial graphenefrom terahertz to visible von Dawlaty, Jahan M., Shivaraman, Shriram, Strait, Jared, George, Paul, Chandrashekhar, Mvs, Rana, Farhan, Spencer, Michael G., Veksler, Dmitry, Chen, Yunqing

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Thickness Estimation of Epitaxial Graphene on SiC Using Attenuation of Substrate Raman Intensity : Carbon-based electronic materials von SHIVARAMAN, Shriram, CHANDRASHEKHAR, M. V. S, BOECKL, John J, SPENCER, Michael G

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GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM von DUTTA, Sourav, CHANG, Sou-Chi, SHIVARAMAN, Shriram, AVCI, Uygar E

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Very slow carrier cooling in graphene measured by optical/THz pump-probe spectroscopy von Strait, Jared, Haining Wang, Shivaraman, Shriram, Shields, Virgil, Spencer, Michael, Rana, Farhan

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SELF-ALIGNED MEMORY CELL WITH REPLACEMENT METAL GATE VERTICAL ACCESS TRANSISTOR AND STACKED 3D CAPACITORS von Dutta, Sourav, Chakraborty, Wriddhi, Dewey, Gilbert, Haratipour, Nazila, Chang, Sou-Chi, Avci, Uygar, Shivaraman, Shriram

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