Optical properties of strained asymmetric triangular InGaAs/GaAs multiple quantum wells von DROOPAD, R, CHOI, K. Y, PUECHNER, R. A, SHIRALAGI, K. T, GERBER, D. S, MARACAS, G. N

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Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfaces von DROOPAD, R, PUECHNER, R. A, SHIRALAGI, K. T, CHOI, K. Y, MARACAS, G. N

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Low temperature GaAs grown by gas source molecular beam epitaxy von Droopad, R., Shiralagi, K.T., Puechner, R.A., Choi, K.Y., Maracas, G.N.

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Molecular beam epitaxial growth and optical properties of strained rectangular and asymmetric triangular InGaAs quantum well structures von Droopad, R., Puechner, R.A., Choi, K.Y., Shiralagi, K.T., Maracas, G.N.

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Electrical and optical characterization of gas source and solid source MBE low temperature buffers von Puechner, R.A., Johnson, D.A., Shiralagi, K.T., Gerber, D.S., Droopad, R., Maracas, G.N.

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Optical properties of quantum wells grown upon gas source molecular-beam epitaxy low-temperature buffers von SHIRALAGI, K. T, PUECHNER, R. A, CHOI, K. Y, DROOPAD, R, MARACAS, G. N

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Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy von Shiralagi, K.T., Puechner, R.A., Choi, K.Y., Droopad, R., Maracas, G.N.

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A novel optically bistable multiple-quantum-well phase modulator von PARK, C, SHIRALAGI, K. T, DROOPAD, R, MARACAS, G. N

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Gas source molecular beam epitaxial growth and characterization of InP on GaAs von Droopad, R., Choi, K.Y., Shiralagi, K.T., Puechner, R.A., Maracas, G.N.

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A novel optical bistable multiple-quantum-well phase modulator von Park, C., Shiralagi, K.T., Droopad, R., Maracas, G.N.

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In-situ and ex-situ characterization of GaAs/AlAs quantum well structures using spectroscopic ellipsometry von Edwards, J.L., Maracas, G.N., Shiralagi, K.T., Choi, K.Y., Droopad, R.

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Long wavelength GaAsP/GaAs/GaAsSb VCSELs on GaAs substrates for communications applications von Dowd, P., Johnson, S.R., Feld, S.A., Adamcyk, M., Chaparro, S.A., Joseph, J., Hilgers, K., Horning, M.P., Shiralagi, K., Zhang, Y.-H.

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Selective formation and alignment of InAs quantum dots over mesa stripes along the [011] and [001] directions on GaAs (100) substrates von Zhang, R., Tsui, R., Shiralagi, K., Convey, D., Goronkin, H.

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Selective positioning of InAs self-organized quantum dots on sub-250 nm GaAs facets von Tsui, R., Zhang, R., Shiralagi, K., Goronkin, H.

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Resistless patterning of Si for processing von Shiralagi, Kumar, Tsui, Raymond

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Effects of layer design on the performance of InAs/AlSb/GaSb resonant interband tunneling diodes on GaAs substrates von SHIRALAGI, K, SHEN, J, TSUI, R

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Spatially Selective Formation of InAs Self-organized Quantum Dots on Patterned GaAs (100) Substrates von Zhang, Ruth, Tsui, Raymond, Goronkin, KumarShiralagi

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GaAs MESFET fabrication without using photoresist von Shiralagi, K., Tsui, R., Goronkin, H.

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Controlled growth of quantum dots on mesa top von Shiralagi, Kumar, Zhang, Ruth, Tsui, Raymond

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Selective InAs growth by chemical beam epitaxy von Shiralagi, K., Walther, M., Tsui, R., Goronkin, H.

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