A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices von Whitaker, Bret, Barkley, Adam, Cole, Zach, Passmore, Brandon, Martin, Daniel, McNutt, Ty R., Lostetter, Alexander B., Jae Seung Lee, Shiozaki, Koji

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Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor von Ochi, Ryota, Maeda, Erika, Nabatame, Toshihide, Shiozaki, Koji, Sato, Taketomo, Hashizume, Tamotsu

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Continuous Operation of a Half-Bridge with Multi-Parallel GaN Power Devices for Increased Current Capability von Sawada, Takashi, Tadano, Hiroshi, Shiozaki, Koji, Isobe, Takanori

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Hafnium silicate gate dielectrics in GaN metal oxide semiconductor capacitors von Nabatame, Toshihide, Maeda, Erika, Inoue, Mari, Yuge, Kazuya, Hirose, Masafumi, Shiozaki, Koji, Ikeda, Naoki, Ohishi, Tomoji, Ohi, Akihiko

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Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition von Nabatame, Toshihide, Maeda, Erika, Inoue, Mari, Hirose, Masafumi, Irokawa, Yoshihiro, Ohi, Akihiko, Ikeda, Naoki, Onaya, Takashi, Shiozaki, Koji, Ochi, Ryota, Hashizume, Tamotsu, Koide, Yasuo

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Erratum: "Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface von Chokawa, Kenta, Narita, Tetsuo, Kikuta, Daigo, Kachi, Tetsu, Shiozaki, Koji, Shiraishi, Kenji

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(Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device von Nabatame, Toshihide, Maeda, Erika, Inoue, Mari, Hirose, Masafumi, Ochi, Ryota, Sawada, Tomomi, Irokawa, Yoshihiro, Hashizume, Tamotsu, Shiozaki, Koji, Onaya, Takashi, Tsukagoshi, Kazuhito, Koide, Yasuo

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Highly reliable nickel-tin transient liquid phase bonding technology for high temperature operational power electronics in electrified vehicles von Sang Won Yoon, Shiozaki, K., Yasuda, S., Glover, M. D.

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Change of characteristics of n-GaN MOS capacitors with Hf-rich HfSiOx gate dielectrics by post-deposition annealing von Maeda, Erika, Nabatame, Toshihide, Yuge, Kazuya, Hirose, Masafumi, Inoue, Mari, Ohi, Akihiko, Ikeda, Naoki, Shiozaki, Koji, Kiyono, Hajime

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Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiO x capacitors using plasma-enhanced atomic layer deposition von Nabatame, Toshihide, Maeda, Erika, Inoue, Mari, Hirose, Masafumi, Irokawa, Yoshihiro, Ohi, Akihiko, Ikeda, Naoki, Onaya, Takashi, Shiozaki, Koji, Ochi, Ryota, Hashizume, Tamotsu, Koide, Yasuo

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Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide ( Al 2 O 3 ) 1 − x ( Si O 2 ) x : First-Principles Exploration of Gate Oxides in Ga N -Based Power Device... von Chokawa, Kenta, Narita, Tetsuo, Kikuta, Daigo, Shiozaki, Koji, Kachi, Tetsu, Oshiyama, Atsushi, Shiraishi, Kenji

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Nickel-Tin Transient Liquid Phase Bonding Toward High-Temperature Operational Power Electronics in Electrified Vehicles von Sang Won Yoon, Glover, M. D., Shiozaki, K.

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Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO2 interface von Chokawa, Kenta, Narita, Tetsuo, Kikuta, Daigo, Kachi, Tetsu, Shiozaki, Koji, Shiraishi, Kenji

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(Invited) Characteristics of Several High-k Gate Insulators for GaN Power Device von Nabatame, Toshihide, Maeda, Erika, Inoue, Mari, Hirose, Masafumi, Kiyono, Hajime, Irokawa, Yoshihiro, Shiozaki, Koji, Koide, Yasuo

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(Invited) Study of HfO 2 -Based High-k Gate Insulators for GaN Power Device von Nabatame, Toshihide, Maeda, Erika, Inoue, Mari, Hirose, Masafumi, Ochi, Ryota, Sawada, Tomomi, Irokawa, Yoshihiro, Hashizume, Tamotsu, Shiozaki, Koji, Onaya, Takashi, Tsukagoshi, Kazuhito, Koide, Yasuo

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Erratum: “Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO 2 interface” von Chokawa, Kenta, Narita, Tetsuo, Kikuta, Daigo, Kachi, Tetsu, Shiozaki, Koji, Shiraishi, Kenji

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Theoretical prediction of a self-forming gallium oxide layer at an n-type GaN/SiO 2 interface von Chokawa, Kenta, Narita, Tetsuo, Kikuta, Daigo, Kachi, Tetsu, Shiozaki, Koji, Shiraishi, Kenji

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Reliable and repeatable bonding technology for high temperature automotive power modules for electrified vehicles von Yoon, Sang Won, Glover, Michael D, Mantooth, H Alan, Shiozaki, Koji

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A 77-81-GHz 16-Element Phased-Array Receiver With [Formula Omitted] Beam Scanning for Advanced Automotive Radars von Ku, Bon-Hyun, Schmalenberg, Paul, Inac, Ozgur, Gurbuz, Ozan Dogan, Lee, Jae Seung, Shiozaki, Koji, Rebeiz, Gabriel M

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A 77-81-GHz 16-Element Phased-Array Receiver With \pm }^ Beam Scanning for Advanced Automotive Radars von Bon-Hyun Ku, Schmalenberg, Paul, Inac, Ozgur, Gurbuz, Ozan Dogan, Jae Seung Lee, Shiozaki, Koji, Rebeiz, Gabriel M.

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