A Floating-Body Cell Fully Compatible With 90-nm CMOS Technology Node for a 128-Mb SOI DRAM and Its Scalability von Hamamoto, T., Minami, Y., Shino, T., Kusunoki, N., Nakajima, H., Morikado, M., Yamada, T., Inoh, K., Sakamoto, A., Higashi, T., Fujita, K., Hatsuda, K., Ohsawa, T., Nitayama, A.

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Corrigendum: "Analysis of hot carrier instability in a floating body cell" [Jpn. J. Appl. Phys. 63, 094002 (2024)] von Nakajima, Hiroomi, Shino, Tomoaki, Furuhashi, Hironobu, Nishimura, Jun, Higashi, Tomoki, Fujita, Katsuyuki, Hatsuda, Kosuke, Fukuda, Ryo, Kajiyama, Takeshi

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Analysis of hot carrier instability in a floating body cell von Nakajima, Hiroomi, Shino, Tomoaki, Furuhashi, Hironobu, Nishimura, Jun, Higashi, Tomoki, Fujita, Katsuyuki, Hatsuda, Kosuke, Fukuda, Ryo, Kajiyama, Takeshi

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SEMICONDUCTOR MEMORY DEVICE von SHINO, Tomoaki

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Reduction of Bipolar Disturb of Floating-Body Cell (FBC) by Silicide and Thin Silicon Film Formed at Source and Drain Regions von Hamamoto, Takeshi, Fukuzumi, Yoshiaki, Higashi, Tomoki, Nakajima, Hiroomi, Minami, Yoshihiro, Shino, Tomoaki, Ohsawa, Takashi, Nitayama, Akihiro

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Semiconductor memory device von Shino, Tomoaki, Tanaka, Hiroyasu

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SEMICONDUCTOR DEVICE von SHINO, Tomoaki, NOGUCHI, Mitsuhiro, TOBA, Takayuki

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Autonomous Refresh of Floating-Body Cell due to Current Anomaly of Impact Ionization von Ohsawa, T., Fukuda, R., Higashi, T., Fujita, K., Matsuoka, F., Shino, T., Furuhashi, H., Minami, Y., Nakajima, H., Hamamoto, T., Watanabe, Y., Nitayama, A., Furuyama, T.

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SEMICONDUCTOR MEMORY DEVICE von SHINO, Tomoaki, TANAKA, Hiroyasu

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Semiconductor memory device von Shino, Tomoaki, Tanaka, Hiroyasu

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Operation voltage dependence of memory cell characteristics in fully depleted floating-body cell von Shino, T., Ohsawa, T., Higashi, T., Fujita, K., Kusunoki, N., Minami, Y., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., Nitayama, A.

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A novel lateral bipolar transistor with 67 GHz fmax on thin-film SOI for RF analog applications von Nii, H, Yamada, T, Inoh, K, Shino, T, Kawanaka, S, Yoshimi, M, Katsumata, Y

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SEMICONDUCTOR MEMORY DEVICE von Shino, Tomoaki, Tanaka, Hiroyasu

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Semiconductor memory device von Shino, Tomoaki, Tanaka, Hiroyasu

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Design of a 128-mb SOI DRAM using the floating body cell (FBC) von Ohsawa, T., Fujita, K., Hatsuda, K., Higashi, T., Shino, T., Minami, Y., Nakajima, H., Morikado, M., Inoh, K., Hamamoto, T., Watanabe, S., Fujii, S., Furuyama, T.

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Semiconductor device von Shino, Tomoaki, Tezuka, Ryuta, Noguchi, Mitsuhiro

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Semiconductor memory device and manufacturing method thereof von SHINO, TOMOAKI

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SEMICONDUCTOR DEVICE von SHINO, Tomoaki, NOGUCHI, Mitsuhiro, TEZUKA, Ryuta

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SEMICONDUCTOR MEMORY DEVICE von SHINO Tomoaki, TANAKA Hiroyasu

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Evaluation of replicated dynamic random access memory cell patterns using X-ray lithography von KIKUCHI, Y, MUROOKA, K.-I, MIYOSHI, K, FUKUDA, M, SUGIHARA, S, MITSUI, S, NOMURA, H, KONDO, K, SHINO, T, KAWAGUCHIYA, H, SUNOUCHI, K, DEGUCHI, K

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