Nonvolatile memory operations using intersubband transitions in GaN/AlN resonant tunneling diodes grown on Si(111) substrates von Nagase, Masanori, Takahashi, Tokio, Shimizu, Mitsuaki

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Enhancement of nonvolatile memory characteristics caused by GaN/AlN resonant tunneling diodes von Nagase, Masanori, Takahashi, Tokio, Shimizu, Mitsuaki

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Near‐Complete Elimination of Size‐Dependent Efficiency Decrease in GaN Micro‐Light‐Emitting Diodes von Zhu, Jun, Takahashi, Tokio, Ohori, Daisuke, Endo, Kazuhiko, Samukawa, Seiji, Shimizu, Mitsuaki, Wang, Xue-Lun

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Impact of byproducts formed on a 4H–SiC surface on interface state density of Al2O3/4H–SiC(0001) gate stacks von Doi, Takuma, Shibayama, Shigehisa, Takeuchi, Wakana, Sakashita, Mitsuo, Taoka, Noriyuki, Shimizu, Mitsuaki, Nakatsuka, Osamu

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Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory von Nagase, Masanori, Takahashi, Tokio, Shimizu, Mitsuaki

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Chemical Vapor Deposition Growth of BN Thin Films Using B2H6 and NH3 von Yamada, Hisashi, Inotsume, Sho, Kumagai, Naoto, Yamada, Toshikazu, Shimizu, Mitsuaki

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Comparative Study of Boron Precursors for Chemical Vapor‐Phase Deposition‐Grown Hexagonal Boron Nitride Thin Films von Yamada, Hisashi, Inotsume, Sho, Kumagai, Naoto, Yamada, Toshikazu, Shimizu, Mitsuaki

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Control of the inversion-channel MOS properties by Mg doping in homoepitaxial p-GaN layers von Takashima, Shinya, Ueno, Katsunori, Matsuyama, Hideaki, Inamoto, Takuro, Edo, Masaharu, Takahashi, Tokio, Shimizu, Mitsuaki, Nakagawa, Kiyokazu

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Comparison of Electrical Properties of Ni/n‐GaN Schottky Diodes on c‐Plane and m‐Plane GaN Substrates von Yamada, Hisashi, Chonan, Hiroshi, Takahashi, Tokio, Shimizu, Mitsuaki

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Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3 von Yamada, Hisashi, Inotsume, Sho, Kumagai, Naoto, Yamada, Toshikazu, Shimizu, Mitsuaki

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Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel von Nguyen, Trung Huu, Takahashi, Tokio, Chonan, Hiroshi, Van Nguyen, Hoang, Yamada, Hisashi, Yamada, Toshikazu, Shimizu, Mitsuaki

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Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface von Nishio, Kengo, Yayama, Tomoe, Miyazaki, Takehide, Taoka, Noriyuki, Shimizu, Mitsuaki

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Switching characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes von Nagase, Masanori, Takahashi, Tokio, Shimizu, Mitsuaki

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Controlled oxide interlayer for improving reliability of SiO2/GaN MOS devices von Yamada, Takahiro, Terashima, Daiki, Nozaki, Mikito, Yamada, Hisashi, Takahashi, Tokio, Shimizu, Mitsuaki, Yoshigoe, Akitaka, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Nd } Fe } N } Magnetic Core Application for Resonance Coil of 13.56 MHz GaN Wireless Power Transmission von Ide, Toshihide, Imaoka, Nobuyoshi, Ozaki, Kimihiro, Shimizu, Mitsuaki, Takada, Noriyuki

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Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs von Doi, Takuma, Shibayama, Shigehisa, Sakashita, Mitsuo, Taoka, Noriyuki, Shimizu, Mitsuaki, Nakatsuka, Osamu

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Stabilization of nonvolatile memory operations using GaN/AlN resonant tunneling diodes by reducing structural inhomogeneity von Nagase, Masanori, Takahashi, Tokio, Shimizu, Mitsuaki

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Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties von Taoka, Noriyuki, Kubo, Toshiharu, Yamada, Toshikazu, Egawa, Takashi, Shimizu, Mitsuaki

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Impacts of Al2O3/GaN interface properties on the screening effect and carrier mobility in an inversion layer von Taoka, Noriyuki, Yamada, Toshikazu, Shimizu, Mitsuaki

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Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth von Ishikawa, Yukari, Sugawara, Yoshihiro, Yao, Yongzhao, Noguchi, Naoto, Takeda, Yukihisa, Yamada, Hisashi, Shimizu, Mitsuaki, Tadatomo, Kazuyuki

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