High-Sensitivity CMOS-Integrated Floating Gate-Based UVC Sensors von Yampolsky, Michael, Pikhay, Evgeny, Shima Edelstein, Ruth, Roizin, Yakov

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Specific and Label‐Free bioFET Sensing of the Interaction Between the Electrically Neutral Small Estriol Molecule and Its Antibody in a Microliter Drop of Diluted Plasma von Babbar, Shubham, Garika, Vijay, Samanta, Soumadri, Bhattarai, Shankar, Sadhujan, Sumesh, Harilal, Sherina, Pikhay, Evgeny, Shima‐Edelstein, Ruth, Greental, Doron, Eisenberg‐Lerner, Avital, Rotfogel, Ziv, Bashouti, Muhammad Y., Akabayov, Barak, Ron, Izhar, Roizin, Yakov, Erez, Offer, Shalev, Gil

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A New Approach toward the Realization of Specific and Label‐Free Biological Sensing Based on Field‐Effect Devices von Bhattacharyya, Ie Mei, Ron, Izhar, Shima‐Edelstein, Ruth, Pikhay, Evgeny, Roizin, Yakov, Shalev, Gil

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Specific and Label‐Free Sensing of Prostate‐Specific Antigen (PSA) from an Ultrasmall Drop of Diluted Human Serum with the Meta‐Nano‐Channel Silicon Field‐Effect Biosensor... von Samanta, Soumadri, Bhattacharyya, Ie Mei, Prajapati, Ashish, Ron, Izhar, Shima‐Edelstein, Ruth, Pikhay, Evgeny, Greental, Doron, Eisenberg‐Lerner, Avital, Rotfogel, Ziv, Roizin, Yakov, Akabayov, Barak, Shalev, Gil

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Label-free and specific detection of active Botulinum neurotoxin in 0.5 μL drops with the meta-nano-channel field-effect biosensor von Ron, Izhar, Bhattacharyya, Ie Mei, Samanta, Soumadri, Tiwari, Vinay Shankar, Greental, Doron, Shima-Edelstein, Ruth, Pikhay, Evgeny, Roizin, Yakov, Akabayov, Barak, Shalev, Gil

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From sensing interactions to controlling the interactions: a novel approach to obtain biological transistors for specific and label-free immunosensing von Samanta, Soumadri, Tiwari, Vinay S, Sadhujan, Sumesh, Harilal, Sherina, Eisenberg-Lerner, Avital, Rotfogel, Ziv, Pikhay, Evgeny, Shima-Edelstein, Ruth, Greental, Doron, Bashouti, Muhammad Y, Akabayov, Barak, Ron, Izhar, Roizin, Yakov, Erez, Offer, Shalev, Gil

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EEPROM memory stack with scaled down thickness von Shima Edelstein, Ruth, Cork, Chris, Aloni, Efraim, Vofsy, Nachi, Roizin, Yakov

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Bonding, Backbonding, and Spin-Polarized Molecular Orbitals: Basis for Magnetism and Semiconducting Transport in V [ TCNE ] x ∼ 2 von Kortright, J. B., Lincoln, D. M., Edelstein, R. Shima, Epstein, A. J.

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Electrostatically controlled gallium nitride based sensor and method of operating same von Roizin, Yakov, Kairys, Victor, Shima-edelstein, Ruth

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Chemical bonding and interdiffusion in scaled down SiO2∕Si3N4∕SiO2 stacks with top oxide formed by thermal ed copyoxidation von Saraf, Meirav, Edrei, Rachel, Akhvlediani, Roza, Roizin, Yakov, Shima-Edelstein, Ruth, Hoffman, Alon

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Low thermal budget SiO2∕Si3N4∕SiO2 stacks for advanced SONOS memories von Saraf, Meirav, Akhvlediani, Roza, Edrei, Rachel, Edelstein, Ruth Shima, Roizin, Yakov, Hoffman, Alon

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Electrostatically Controlled Gallium Nitride Based Sensor And Method Of Operating Same von Roizin, Yakov, Kairys, Victor, Shima-Edelstein, Ruth

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Low thermal budget SiO 2 ∕ Si 3 N 4 ∕ SiO 2 stacks for advancedSONOS memories von Saraf, Meirav, Akhvlediani, Roza, Edrei, Rachel, Edelstein, Ruth Shima, Roizin, Yakov, Hoffman, Alon

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Gallium nitride based ultra-violet sensor with intrinsic amplification and method of operating same von Roizin, Yakov, Kairys, Victor, Shima-edelstein, Ruth, Sahar, Carmel

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Method of forming a GaN sensor having a controlled and stable threshold voltage in the sensing area von Strul, Roy, Roizin, Yakov, Sergienko, Anatoly, Gilad, Ido, Sirkis, Alex, Shima-Edelstein, Ruth, Shaul, Ronen, Poliak, Liz

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Gallium Nitride Based Ultra-Violet Sensor With Intrinsic Amplification and Method of Operating Same von Roizin, Yakov, Kairys, Victor, Shima-edelstein, Ruth, Sahar, Carmel

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METHOD OF FORMING A GaN SENSOR HAVING A CONTROLLED AND STABLE THRESHOLD VOLTAGE IN THE SENSING AREA von Strul, Roy, Roizin, Yakov, Sergienko, Anatoly, Gilad, Ido, Sirkis, Alex, Shima-Edelstein, Ruth, Shaul, Ronen, Poliak, Liz

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Method of forming a GaN sensor having a controlled and stable threshold voltage von Strul, Roy, Roizin, Yakov, Sergienko, Anatoly, Gilad, Ido, Sirkis, Alex, Shima-Edelstein, Ruth, Shaul, Ronen, Poliak, Liz

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Method Of Forming A GaN Sensor Having A Controlled And Stable Threshold Voltage von Strul, Roy, Roizin, Yakov, Sergienko, Anatoly, Gilad, Ido, Sirkis, Alex, Shima-Edelstein, Ruth, Shaul, Ronen, Poliak, Liz

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Nitrogen diffusion and accumulation at the Si∕SiO2 interface in SiO2∕Si3N4∕SiO2 structures for nonvolatile semiconductor memories von Saraf, Meirav, Edrei, Rachel, Shima-Edelstein, Ruth, Roizin, Yakov, Hoffman, Alon

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