Improved Output Power of 380 nm InGaN-Based LEDs Using a Heavily Mg-Doped GaN Insertion Layer Technique von Huang, Shih-Cheng, Wuu, Dong-Sing, Wu, Peng-Yi, Chan, Shih-Hsiung

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Electrical Properties of the Si Implantation in Mg Doped p-GaN von Lai, Wei-Chih, Yokoyama, M., Tsai, Chiung-Chi, Chang, Chen-Shiung, Guo, Jan-Dar, Tsang, Jian-Shih, Chan, Shih-Hsiung

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Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition von Lai, Wei-Chi, Chang, Chun-Yen, Yokoyama, Meiso, Guo, Jen-Dar, Tsang, Jian-Shihn, Chan, Shih-Hsiung, Bow, Jong-Shing, Wei, Sun-Chin, Hong, Ray-Hua, Sze, Simon M.

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Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructures von TSANG, J.-S, GUO, J.-D, CHAN, S.-H, FENG, M.-S, CHANG, C.-Y

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Thermal Stability of Co-Sputtered Ru–Ti Alloy Electrodes for Dynamic Random Access Memory Applications von Horng, Ray-Hua, Wuu, Dong-Sing, Wu, Luh-Huei, Lee, Ming-Kwei, Chan, Shih-Hsiung, Leu, Ching-Chich, Huang, Tiao-Yuan, Sze, Simon Min

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Silicon delta doping of GaInP grown by low-pressure metalorganic chemical vapor deposition von Wang, Chien-Jen, Wu, Janne-Wha, Chan, Shih-Hsiung, Chang, Chun-Yen, Sze, Simon Min, Feng, Ming-Shiann

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Selective epitaxial growth of GaInP by LP-MOCVD using ethyldimethylindium, trimethylindium, trimethylgallium and triethylgallium as group III sources von Chan, Shih-Hsiung, Sze, Simon Ming, Chang, Chun-Yen, Lee, Wei-I

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Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor deposition von CHIEN-JEN WANG, MING-SHIANN FENG, SHIH-HSIUNG CHAN, JANNE-WHA WU, CHUN-YEN CHANG, MIN SZE, S

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Influence of metalorganic sources on the composition uniformity of selectively grown GaxIn1-xP von SHIH-HSIUNG CHAN, CHUN-YEN CHANG, SIMON MING SZE

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Electrical Properties of Multiple High-Dose Si Implantation in p-GaN von Lai, Wei-Chih, Yokoyama, Mesio, Tsai, Chiung-Chi, Chang, Chen-Shiung, Guo, Jan-Dar, Tsang, Jian-Shihn, Chan, Shih-Hsiung, Chang, Chun-Yen

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Back-gating effects on the Ga0.1In0.9P/InP/InGaAs high-electron-mobility transistor von KUN-CHUAN LIN, CHUN-YEN CHANG, CHANG-CHERNG WU, HORNG-DAR CHEN, PO-AN CHEN, SHIH-HSIUNG CHAN, JANNE-WHA WU, E-YI CHANG

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OPTICAL AND ELECTRICAL CHARACTERISTICS OF CO2-LASER-TREATED Mg-DOPED GaN FILM von Lai, W-C, Yokoyama, M, Chang, S-J, Guo, J-D, Sheu, C-H, Chen, T-Y

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Effects of O2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films von Leu, Ching-Chich, Chan, Shih-Hsiung, Chen, Haur-Ywh, Horng, Ray-Hua, Wuu, Dong-Sing, Wu, Luh-Huei, Huang, Tiao-Yuan, Chang, Chun-Yen, Sze, Simon Min

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Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition von Wang, Chien-Jen, Feng, Ming-Shiann, Chan, Shih-Hsiung, Chang, Chun-Yen, Wu, Janne-Hua, Sze, Simon Min

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Selective epitaxial growth of GaInP by low-pressure metal-organic chemical-vapor deposition using ethyldimethylindium as In source von Chan, Shih-Hsiung, Sze, Simon Ming, Chang, Chun-Yen, Lee, Wei-I

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Magnesium doping of InGaAlP grown by low-pressure metalorganic chemical vapor deposition von Wu, Chang-Cherng, Chang, Chun-Yen, Chen, Po-An, Chen, Horng-Dar, Lin, Kun-Chuan, Chan, Shih-Hsiung

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High-performance Au/Ti/Ge/Pd ohmic contacts on n-type In0.5Ga0.5P von CHAI, S.-Y, WU, J.-W, GUO, J.-D, HUANG, J.-A, LAI, Y.-L, CHAN, S.-H, CHANG, C.-Y, CHAN, Y.-J, CHENG, H.-C

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Back-Gating Effects on the Ga 0.1 In 0.9 P/InP/InGaAs High-Electron-Mobility Transistor von Lin, Kun-Chuan, Chang, Chun-Yen, Wu, Chang-Cherng, Chen, Horng-Dar, Chen, Po-An, Chan, Shih-Hsiung, Wu, Janne-Wha, Chang, E-Yi

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Dry etching of platinum films with TiN masks in an Ar/O2 helicon wave plasma von Chiang, Ming-Chung, Pan, Fu-Ming, Cheng, Han-Chung, Liu, Jeng-Shu, Chan, Shih-Hsiung, Wei, Ta-Chin

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Dry etching of platinum films with TiN masks in an Ar/O 2 helicon wave plasma von Chiang, Ming-Chung, Pan, Fu-Ming, Cheng, Han-Chung, Liu, Jeng-Shu, Chan, Shih-Hsiung, Wei, Ta-Chin

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