Investigation of normal and superconducting states in noncentrosymmetric Re24Ti5 von Lue, C S, Liu, H F, Kuo, C N, Shih, P S, Lin, J-Y, Kuo, Y K, Chu, M W, Hung, T-L, Chen, Y Y

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Comparison of intraabdominal pressures using the gastroscope and laparoscope for transgastric surgery von MEIRELES, O, KANTSEVOY, S. V, MAROHN, M. R, KALLOO, A. N, JAGANNATH, S. B, GIDAY, S. A, MAGNO, P, SHIH, S. P, HANLY, E. J, KO, C.-W, BEITLER, D. M

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Hybrid minimally invasive surgery- : a bridge between laparoscopic and translumenal surgery von SHIH, S. P, KANTSEVOY, S. V, KALLOO, A. N, MAGNO, P, GIDAY, S. A, KO, C.-W, ISAKOVICH, N. V, MEIRELES, O, HANLY, E. J, MAROHN, M. R

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Highly uniform microfluidic electroless interconnections for chip stacking applications von Hung, H.T., Ma, Z.D., Shih, P.S., Huang, J.H., Kao, L.Y., Yang, C.Y., Renganathan, Vengudusamy, Kao, C.L., Hung, Y.C., Kao, C.R.

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Laparoscopic surgery and the parasympathetic nervous system von FUENTES, J. M, HANLY, E. J, AURORA, A. R, DE MAIO, A, SHIH, S. P, MAROHN, M. R, TALAMINI, M. A

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Characterization and formation of nanocrystalline diamonds in a-C/N films by filtered cathodic vacuum arc plasma von Hsieh, W.J., Shih, P.S., Lin, J.H., Lin, C.C., Chen, U.S., Huang, S.C., Chang, Y.S., Shih, H.C.

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Additive-induced crystallization of highly (111) textured Cu nanotwins by electroless deposition von Shih, P.S., Huang, C.H., Kao, C.R.

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Effects of an interposed Mo layer on the interfacial reactions of Ti/Si0.76Ge0.24 by rapid thermal annealing and pulsed laser annealing von Huang, Jun-Chieh, Luo, Jian-Shing, Lin, Wen-Tai, Chang, C Y, Shih, P S

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Development of high copper concentration, low operating temperature, and environmentally friendly electroless copper plating using a copper ‐ glycerin complex solution von Huang, J.H., Shih, P.S., Renganathan, V., Grӓfner, S.J., Chen, Y.A., Huang, C.H., Kao, C.L., Lin, Y.S., Hung, Y.C., Kao, C.R.

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Application of high temperature deposited aluminum gate electrode to the fabrication of a-SI:H TFT von Shih, P.S., Chang, T.C., Chen, S.M., Feng, M.S., Peng, D.Z., Chang, C.Y.

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Annealing effects on the interfacial reactions of Ni on Si0.76Ge0.24 and Si1−x−yGexCy von Luo, Jian-Shing, Lin, Wen-Tai, Chang, C. Y., Shih, P. S., Pan, F. M.

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Mechanical Strain for 0.16 µm nMOSFET on 30 µm Si-Substrate von Ke, J. Y., Shih, S. P., Lee, Y. C., Kao, H. L., Yeh, C. S., Chen, M. T.

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withoutprior2.mp4 von SU, SHIH-PO

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withprior2.mp4 von SU, SHIH-PO

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Room temperature oxidation of Cu/Si0.76Ge0.24 annealed at 200 to 300°C von LUO, J.-S, LIN, W.-T, CHANG, C. Y, SHIH, P. S

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Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors von Peng, D.Z, Zan, H.W, Shih, P.S, Chang, T.C, Lin, C.W, Chang, C.Y

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Investigation of normal and superconducting states in noncentrosymmetric Re 24 Ti 5 von Lue, C S, Liu, H F, Kuo, C N, Shih, P S, Lin, J-Y, Kuo, Y K, Chu, M W, Hung, T-L, Chen, Y Y

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The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor von Chang, Chun-Yen, Lee, Yeong-Shyang, Huang, Tiao-Yuan, Shih, Po-Sheng, Lin, Chiung-Wei

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Investigation of normal and superconducting states in noncentrosymmetric Re sub(24)Ti sub(5) von Lue, C S, Liu, H F, Kuo, C N, Shih, P S, J-Y, Lin, Kuo, Y K, Chu, M W, T-L, Hung, Chen, Y Y

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Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing von Chen, Da-Ren, Luo, Jian-Shing, Lin, Wen-Tai, Chang, C. Y., Shih, P. S.

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