off-State Degradation in Drain-Extended NMOS Transistors: Interface Damage and Correlation to Dielectric Breakdown von Varghese, D., Kufluoglu, H., Reddy, V., Shichijo, H., Mosher, D., Krishnan, S., Muhammad Ashraful Alam

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Device and technology evolution for Si-based RF integrated circuits von Bennett, H.S., Brederlow, R., Costa, J.C., Cottrell, P.E., Huang, W.M., Immorlica, A.A., Mueller, J.-E., Racanelli, M., Shichijo, H., Weitzel, C.E., Bin Zhao

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RF CMOS on high-resistivity substrates for system-on-chip applications von Benaissa, K., Jau-Yuann Yang, Crenshaw, D., Williams, B., Sridhar, S., Ai, J., Boselli, G., Song Zhao, Shaoping Tang, Ashburn, S., Madhani, P., Blythe, T., Mahalingam, N., Shichijo, H.S.

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High-voltage drain extended MOS transistors for 0.18-μm logic CMOS process von Mitros, J.C., Chin-Yu Tsai, Shichijo, H., Kunz, M., Morton, A., Goodpaster, D., Mosher, D., Efland, T.R.

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280GHz and 860GHz image sensors using Schottky-barrier diodes in 0.13μm digital CMOS von Ruonan Han, Yaming Zhang, Youngwan Kim, Dae Yeon Kim, Shichijo, H., Afshari, E., Kenneth, O.

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Broadband Root-Mean-Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave Voltages von Chuan Lee, Wooyeol Choi, Ruonan Han, Shichijo, H., Kenneth, K. O.

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I-Gate Body-Tied Silicon-on-Insulator MOSFETs With Improved High-Frequency Performance von Chieh-Lin Wu, Chikuang Yu, Shichijo, H, Kenneth, K O

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Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates von Lee, J. W., Shichijo, H., Tsai, H. L., Matyi, R. J.

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A Physical Understanding of RF Noise in Bulk nMOSFETs With Channel Lengths in the Nanometer Regime von Mahajan, V. M., Patalay, P. R., Jindal, R. P., Shichijo, H., Martin, S., Hou, F., Machala, C., Trombley, D. E.

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Foreword special issue on device integration technology for mixed-signal SOC von Chatterjee, A., Cressler, J.D., Klaassen, D.B.M., Matsuzawa, A., Shichijo, H.

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Compact, High Impedance and Wide Bandwidth Detectors for Characterization of Millimeter Wave Performance von Chikuang Yu, Chieh-Lin Wu, Kshattry, S., Yang-Hun Yun, Choong-Yul Cha, Shichijo, H., O, Kenneth K.

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Anomalous leakage current in LPCVD PolySilicon MOSFET's von Fossum, J.G., Ortiz-Conde, A., Shichijo, H., Banerjee, S.K.

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Characteristics and three-dimensional integration of MOSFET's in small-grain LPCVD polycrystalline Silicon von Malhi, S.D.S., Shichijo, H., Banerjee, S.K., Sundaresan, R., Elahy, M., Pollack, G.P., Richardson, W.F., Shah, A.H., Hite, L.R., Womack, R.H., Chatterjee, P.K., Lam, H.W.

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Negative differential resistance through real-space electron transfer von Hess, K., Morkoç, H., Shichijo, H., Streetman, B. G.

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Schottky diodes in CMOS for terahertz circuits and systems von Yarning Zhang, Ruonan Han, Youngwan Kim, Dae Yeon Kim, Shichijo, H., Sankaran, S., Chuying Mao, Eunyoung Seok, Dongha Shim, Kenneth, K. O.

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Hot-electron degradation of n-channel polysilicon MOSFETs von Banerjee, S., Sundaresan, R., Shichijo, H., Malhi, S.

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Growth of GaAs on GaAs-coated Si by liquid-phase epitaxy von SAKAI, S, MATYI, R. J, SHICHIJO, H

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Monolithic process for co-integration of GaAs MESFET and silicon CMOS devices and circuits von Shichijo, H., Matyi, R., Taddiken, A.H., Kao, Y.-C.

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A comprehensive analysis of off-state stress in drain extended PMOS transistors: Theory and characterization of parametric degradation and dielectric failure von Varghese, D., Reddy, V., Shichijo, H., Mosher, D., Krishnan, S., Alam, M.A.

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GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrate von Shichijo, H., Lee, J.W., McLevige, W.V., Taddiken, A.H.

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