Quadruple Cross-Coupled Latch-Based 10T and 12T SRAM Bit-Cell Designs for Highly Reliable Terrestrial Applications von Jiang, Jianwei, Xu, Yiran, Zhu, Wenyi, Xiao, Jun, Zou, Shichang

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Broadband and fabrication-tolerant on-chip scalable mode-division multiplexing based on mode-evolution counter-tapered couplers von Wang, Jing, Xuan, Yi, Qi, Minghao, Huang, Haiyang, Li, You, Li, Ming, Chen, Xin, Sheng, Zhen, Wu, Aimin, Li, Wei, Wang, Xi, Zou, Shichang, Gan, Fuwan

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Novel ultra-broadband polarization splitter-rotator based on mode-evolution tapers and a mode-sorting asymmetric Y-junction von Wang, Jing, Niu, Ben, Sheng, Zhen, Wu, Aimin, Li, Wei, Wang, Xi, Zou, Shichang, Qi, Minghao, Gan, Fuwan

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Uniform voltage distribution analysis for high peak voltage antenna tuner switch von Ren, Jiangchuan, Dai, Ruofan, He, Jun, Zhang, Zhengxuan, Zou, Shichang

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Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs von Jia, Yupeng, Zhang, Zhengxuan, Bi, Dawei, Hu, Zhiyuan, Zou, Shichang

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Single-Event Transient Characterization of a Radiation-Tolerant Charge-Pump Phase-Locked Loop Fabricated in 130 nm PD-SOI Technology von Chen, Zhuojun, Lin, Min, Zheng, Yunlong, Wei, Zuodong, Huang, Shuigen, Zou, Shichang

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Analysis of Single-Event Effects in a Radiation-Hardened Low-Jitter PLL Under Heavy Ion and Pulsed Laser Irradiation von Chen, Zhuojun, Lin, Min, Ding, Ding, Zheng, Yunlong, Sang, Zehua, Zou, Shichang

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An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-nm PDSOI I/O nMOSFETs von Xie, Xin, Zhu, Huilong, Zhang, Mengying, Liu, Xiaonian, Dai, Lihua, Bi, Dawei, Hu, Zhiyuan, Zhang, Zhengxuan, Zou, Shichang

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Total-Ionizing-Dose Induced Coupling Effect in the 130-nm PDSOI I/O nMOSFETs von Peng, Chao, Hu, Zhiyuan, Ning, Bingxu, Huang, Huixiang, Zhang, Zhengxuan, Bi, Dawei, En, Yunfei, Zou, Shichang

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A Compact and Low-Loss MMI Coupler Fabricated With CMOS Technology von Zhen Sheng, Zhiqi Wang, Chao Qiu, Le Li, Pang, A., Aimin Wu, Xi Wang, Shichang Zou, Fuwan Gan

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Fabrication, Characterization and Loss Analysis of Silicon Nanowaveguides von Qiu, Chao, Gan, Fuwan, Sheng, Zhen, Li, Hao, Liu, Wei, Li, Le, Pang, Albert, Wu, Aimin, Wang, Xi, Zou, Shichang

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Optical beam steering based on the symmetry of resonant modes of nanoparticles von Du, Junjie, Lin, Zhifang, Chui, S T, Lu, Wanli, Li, Hao, Wu, Aimin, Sheng, Zhen, Zi, Jian, Wang, Xi, Zou, Shichang, Gan, Fuwan

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Optimization and Demonstration of a Large-bandwidth Carrier-depletion Silicon Optical Modulator von Jing Wang, Chao Qiu, Hao Li, Wei Ling, Le Li, Pang, Albert, Zhen Sheng, Aimin Wu, Xi Wang, Shichang Zou, Fuwan Gan

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Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs von Dai, Lihua, Liu, Xiaonian, Zhang, Mengying, Zhang, Leqing, Hu, Zhiyuan, Bi, Dawei, Zhang, Zhengxuan, Zou, Shichang

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Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology von Song, Lei, Hu, Zhiyuan, Zhang, Mengying, Liu, Xiaonian, Dai, Lihua, Zhang, Zhengxuan, Zou, Shichang

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Three-Dimensional Tapered Spot-Size Converter Based on (111) Silicon-on-Insulator von Na Fang, Na Fang, Zhifeng Yang, Zhifeng Yang, Aimin Wu, Aimin Wu, Jing Chen, Jing Chen, Miao Zhang, Miao Zhang, Shichang Zou, Shichang Zou, Xi Wang, Xi Wang

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Anomalous Electrical Properties Induced by Hot-Electron-Injection in 130-nm Partially Depleted SOI NMOSFETs Fabricated on Modified Wafer von Dai, Lihua, Bi, Dawei, Ning, Bingxu, Hu, Zhiyuan, Song, Lei, Liu, Xiaonian, Zhang, Mengying, Zhang, Zhengxuan, Zou, Shichang

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A New Method for Extracting the Radiation Induced Trapped Charge Density Along the STI Sidewall in the PDSOI NMOSFETs von Peng, Chao, Hu, Zhiyuan, Zhang, Zhengxuan, Huang, Huixiang, Ning, Bingxu, Bi, Dawei, Zou, Shichang

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A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory With a Sensing Current Protection Technique von Zhang, Shengbo, Xiao, Jun, Yang, Guangjun, Hu, Jian, Huang, Mingyong, Zou, Shichang

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Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs von Ning, Bingxu, Bi, Dawei, Huang, Huixiang, Zhang, Zhengxuan, Hu, Zhiyuan, Chen, Ming, Zou, Shichang

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