Enhanced superconductivity close to a non-magnetic quantum critical point in electron-doped strontium titanate von Tomioka, Yasuhide, Shirakawa, Naoki, Shibuya, Keisuke, Inoue, Isao H.

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Polarized Raman scattering of epitaxial vanadium dioxide films with low-temperature monoclinic phase von Shibuya, Keisuke, Sawa, Akihito

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Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4 Thin Films von Shibuya, Keisuke, Dittmann, Regina, Mi, Shaobo, Waser, Rainer

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Defects and transport in complex oxide thin films von Ohnishi, Tsuyoshi, Shibuya, Keisuke, Yamamoto, Takahisa, Lippmaa, Mikk

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Metal-insulator transition in epitaxial V1−xWxO2(≤x≤0.33) thin films von Shibuya, Keisuke, Kawasaki, Masashi, Tokura, Yoshinori

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Epitaxial growth and polarized Raman scattering of niobium dioxide films von Shibuya, Keisuke, Sawa, Akihito

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Modulation of Metal-Insulator Transition in VO2 by Electrolyte Gating-Induced Protonation von Shibuya, Keisuke, Sawa, Akihito

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Selective synthesis of spiro and dispiro compounds using Mn(III)-based oxidation of tetracarbonyl compounds von Yokote, Suzuka, Nishikawa, Satomi, Shibuya, Keisuke, Hisano, Kazuki, Nishino, Hiroshi

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Polarization switching behavior of Hf-Zr-O ferroelectric ultrathin films studied through coercive field characteristics von Migita, Shinji, Ota, Hiroyuki, Yamada, Hiroyuki, Shibuya, Keisuke, Sawa, Akihito, Toriumi, Akira

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Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition von Shibuya, Keisuke, Sawa, Akihito

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Switching dynamics of silicon waveguide optical modulator driven by photothermally induced metal-insulator transition of vanadium dioxide cladding layer von Shibuya, Keisuke, Ishii, Kiyo, Atsumi, Yuki, Yoshida, Tomoya, Sakakibara, Youichi, Mori, Masahiko, Sawa, Akihito

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Phase transformation behavior of ultrathin Hf0.5Zr0.5O2 films investigated through wide range annealing experiments von Migita, Shinji, Ota, Hiroyuki, Shibuya, Keisuke, Yamada, Hiroyuki, Sawa, Akihito, Matsukawa, Takashi, Toriumi, Akira

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Fabrication and Raman scattering study of epitaxial VO2 films on MgF2 (001) substrates von Shibuya, Keisuke, Tsutsumi, Jun’ya, Hasegawa, Tatsuo, Sawa, Akihito

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High temperature coefficient of resistance of low-temperature-grown VO2 films on TiO2-buffered SiO2/Si (100) substrates von Miyazaki, Kenichi, Shibuya, Keisuke, Suzuki, Megumi, Wado, Hiroyuki, Sawa, Akihito

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Silicon waveguide optical modulator driven by metal–insulator transition of vanadium dioxide cladding layer von Shibuya, Keisuke, Atsumi, Yuki, Yoshida, Tomoya, Sakakibara, Youichi, Mori, Masahiko, Sawa, Akihito

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Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition von Miyazaki, Kenichi, Shibuya, Keisuke, Suzuki, Megumi, Sakai, Kenichi, Fujita, Jun-ichi, Sawa, Akihito

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Metallic conductivity at the CaHfO3∕SrTiO3 interface von Shibuya, Keisuke, Ohnishi, Tsuyoshi, Lippmaa, Mikk, Oshima, Masaharu

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Epitaxial growth and structural transition of VO2/MgF2(001) von Shibuya, Keisuke, Sawa, Akihito

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Metal-insulator transition in SrTiO3 induced by field effect von Shibuya, Keisuke, Ohnishi, Tsuyoshi, Sato, Taisuke, Lippmaa, Mikk

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Distinct Substrate Effect on the Reversibility of the Metal–Insulator Transitions in Electrolyte‐Gated VO2 Thin Films von Nakano, Masaki, Okuyama, Daisuke, Shibuya, Keisuke, Mizumaki, Masaichiro, Ohsumi, Hiroyuki, Yoshida, Masaro, Takata, Masaki, Kawasaki, Masashi, Tokura, Yoshinori, Arima, Takahisa, Iwasa, Yoshihiro

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