Epitaxial lift-off process for gallium arsenide substrate reuse and flexible electronics von Cheng, Cheng-Wei, Shiu, Kuen-Ting, Li, Ning, Han, Shu-Jen, Shi, Leathen, Sadana, Devendra K.

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Single charge and confinement effects in nano-crystal memories von Tiwari, Sandip, Rana, Farhan, Chan, Kevin, Shi, Leathen, Hanafi, Hussein

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Hybrid-orientation technology (HOT): opportunities and challenges von Min Yang, Chan, V.W.C., Chan, K.K., Shi, L., Fried, D.M., Stathis, J.H., Chou, A.I., Gusev, E., Ott, J.A., Burns, L.E., Fischetti, M.V., Meikei Ieong

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Low-Temperature Oxide Wafer Bonding for 3-D Integration: Chemistry of Bulk Oxide Matters von Wei Lin, Shi, Leathen, Yiping Yao, Madan, Anita, Pinto, Teresa, Zavolas, Nick, Murphy, Richard, Skordas, Spyridon, Iyer, Subramanian

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Extreme scaling with ultra-thin Si channel MOSFETs von Doris, B., Meikei Ieong, Kanarsky, T., Ying Zhang, Roy, R.A., Dokumaci, O., Zhibin Ren, Fen-Fen Jamin, Leathen Shi, Natzle, W., Hsiang-Jen Huang, Mezzapelle, J., Mocuta, A., Womack, S., Gribelyuk, M., Jones, E.C., Miller, R.J., Wong, H.-S.P., Haensch, W.

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A 23.8-GHz SOI CMOS tuned amplifier von Floyd, B.A., Shi, L., Yuan Taur, Lagnado, I., O, K.K.

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Semiconductor device including built-in crack-arresting film structure von Lin, Wei, Skordas, Spyridon, Shi, Leathen, Winstel, Kevin R

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Semiconductor device including built-in crack-arresting film structure von Lin, Wei, Skordas, Spyridon, Shi, Leathen, Winstel, Kevin R

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SEMICONDUCTOR DEVICE INCLUDING BUILT-IN CRACK-ARRESTING FILM STRUCTURE von Lin, Wei, Skordas, Spyridon, Shi, Leathen, Winstel, Kevin R

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Semiconductor device including built-in crack-arresting film structure von Lin, Wei, Skordas, Spyridon, Shi, Leathen, Winstel, Kevin R

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SEMICONDUCTOR DEVICE INCLUDING BUILT-IN CRACK-ARRESTING FILM STRUCTURE von Winstel Kevin R, Shi Leathen, Skordas Spyridon, Lin Wei

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Semiconductor device including built-in crack-arresting film structure von Winstel Kevin R, Shi Leathen, Skordas Spyridon, Lin Wei

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SEMICONDUCTOR DEVICE INCLUDING BUILT-IN CRACK-ARRESTING FILM STRUCTURE von Winstel Kevin R, Shi Leathen, Skordas Spyridon, Lin Wei

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SEMICONDUCTOR DEVICE INCLUDING BUILT-IN CRACK-ARRESTING FILM STRUCTURE von LIN WEI, WINSTEL KEVIN R, SHI LEATHEN, SKORDAS SPYRIDON

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WAFER LEVEL INTEGRATION INCLUDING DESIGN/CO-DESIGN, STRUCTURE PROCESS, EQUIPMENT STRESS MANAGEMENT, AND THERMAL MANAGEMENT von HUNG Li-Wen, WEBB Bucknell C, KNICKERBOCKER John U, TSANG YANG Cornelia, SHI Leathen

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Epitaxial lift-off process with guided etching von Sadana Devendra K, Shi Leathen, Shiu Kuen-Ting, Cheng Cheng-Wei, Li Ning

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Novel Epitaxial Lift-Off Process for GaAs Substrate Reuse and Flexible Electronics von Cheng, Cheng-Wei, Shiu, Kuen-Ting, Li, Ning, Han, Shu-Jen, Shi, Leathen, Sadana, Devendra K.

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High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz fT von Wann, C., Assaderaghi, F., Shi, L., Chan, K., Cohen, S., Hovel, H., Jenkins, K., Lee, Y., Sadana, D., Viswanathan, R., Wind, S., Taur, Y.

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EPITAXIAL LIFT-OFF PROCESS WITH GUIDED ETCHING von Sadana Devendra K, Shi Leathen, Shiu Kuen-Ting, Cheng Cheng-Wei, Li Ning

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Epitaxial lift-off process with guided etching von Sadana Devendra K, Shi Leathen, Shiu Kuen-Ting, Cheng Cheng-Wei, Li Ning

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