Self-Annealing Effect of Tensile Liner on Thick-Tinv PMOS von Qintao Zhang, Jie Chen, Sherony, M. J.

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Transient behavior of the kink effect in partially-depleted SOI MOSFET's von Wei, A., Sherony, M.J., Antoniadis, D.A.

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Effect of floating-body charge on SOI MOSFET design von Wei, A., Sherony, M.J., Antoniadis, D.A.

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SOI MOSFET effective channel mobility von Sherony, M.J., Su, L.T., Chung, J.E., Antoniadis, D.A.

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Reduction of threshold voltage sensitivity in SOI MOSFET's von Sherony, M.J., Su, L.T., Chung, J.E., Antoniadis, D.A.

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ESTABLISHING A THERMAL PROFILE ACROSS A SEMICONDUCTOR CHIP von SCHNABEL CHRISTOPHER M, SHERONY MELANIE J, HOOK TERENCE B

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Establishing a thermal profile across a semiconductor chip von SCHNABEL CHRISTOPHER M, SHERONY MELANIE J, HOOK TERENCE B

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ESTABLISHING A THERMAL PROFILE ACROSS A SEMICONDUCTOR CHIP von SCHNABEL CHRISTOPHER M, SHERONY MELANIE J, HOOK TERENCE B

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In-situ annealing for extending the lifetime of CMOS products von SHERONY MELANIE J, SCHNABEL CHRISTOPHER M, HOOK TERENCE B

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In-situ relaxation for improved CMOS product lifetime von SHERONY MELANIE J, SCHNABEL CHRISTOPHER M, HOOK TERENCE B

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IN-SITU RELAXATION FOR IMPROVED CMOS PRODUCT LIFETIME von SHERONY MELANIE J, SCHNABEL CHRISTOPHER M, HOOK TERENCE B

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IN-SITU ANNEALING FOR EXTENDING THE LIFETIME OF CMOS PRODUCTS von SHERONY MELANIE J, SCHNABEL CHRISTOPHER M, HOOK TERENCE B

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Reduced plasma-induced chaging damage in SOI MOSFETs von Sherony, Melanie J., Antoniadis, Dimitri A., Chen, Ann J., Mistry, Kaizad R.

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High pressure deuterium treatment for semiconductor/high-K insulator interface von PARK DAE-GYU, CHEN XIANGDONG, SHERONY MELANIE J, KANG LAEGU, LI WEIPENG

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HIGH PRESSURE DEUTERIUM TREATMENT FOR SEMICONDUCTOR/HIGH-K INSULATOR INTERFACE von PARK DAE-GYU, CHEN XIANGDONG, SHERONY MELANIE J, KANG LAEGU, LI WEIPENG

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Self-limiting oxygen seal for high-K dielectric and design structure von STEIN KENNETH J, SHAH JAY M, NARAYANAN VIJAY, SHERONY MELANIE J, HOOK TERENCE B, WANG HELEN H, ZHU CHENDONG

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SELF-LIMITING OXYGEN SEAL FOR HIGH-K DIELECTRIC, RELATED METHOD AND DESIGN STRUCTURE von STEIN KENNETH J, SHAH JAY M, NARAYANAN VIJAY, SHERONY MELANIE J, HOOK TERENCE B, WANG HELEN H, ZHU CHENDONG

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Threshold voltage improvement employing fluorine implantation and adjustment oxide layer von PARK DAE-GYU, LEE YONG MENG, HAN JIN-PING, SHERONY MELANIE J, LI WEIPENG

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Threshold voltage improvement employing fluorine implantation and adjustment oxide layer von Li, Weipeng, Park, Dae-Gyu, Sherony, Melanie J, Han, Jin-Ping, Lee, Yong Meng

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THRESHOLD VOLTAGE IMPROVEMENT EMPLOYING FLUORINE IMPLANTATION AND ADJUSTMENT OXIDE LAYER von WEIPENG LI, DAE-GYU PARK, SHERONY MELANIE J, MENG LEE YONG, JIN-PING HAN

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