Quantum dot lasers: breakthrough in optoelectronics von Bimberg, D., Grundmann, M., Heinrichsdorff, F., Ledentsov, N.N., Ustinov, V.M., Zhukov, A.E., Kovsh, A.R., Maximov, M.V., Shernyakov, Y.M., Volovik, B.V., Tsatsul’nikov, A.F., Kop’ev, P.S., Alferov, Zh.I.

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Observation of zero linewidth enhancement factor at excited state band in quantum dot laser von Zubov, F.I, Maximov, M.V, Moiseev, E.I, Savelyev, A.V, Shernyakov, Y.M, Livshits, D.A, Kryzhanovskaya, N.V, Zhukov, A.E

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High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence von Maximov, M.V., Shernyakov, Y.M., Novikov, I.I., Kuznetsov, S.M., Karachinsky, L.Ya, Gordeev, N.Yu, Kalosha, V.P., Shchukin, V.A., Ledentsov, N.N.

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High-power edge-emitting laser diode with narrow vertical beam divergence von LEDENTSOV, N. N, SHCHUKIN, V. A, BUGGE, F, WEYERS, M, NOVIKOV, I. I, GORDEEV, N. Yu, MAXIMOV, M. V, SHERNYAKOV, Y. M, PAUSOV, A. S, POSILOVIC, K, KETTLER, T, BIMBERG, D

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MBE-grown ultra-large aperture single-mode vertical-cavity surface-emitting laser with all-epitaxial filter section von Blokhin, S.A., Karachinsky, L.Ya, Novikov, I.I., Kuznetsov, S.M., Gordeev, N.Yu, Shernyakov, Y.M., Savelyev, A.V., Maximov, M.V., Mutig, A., Hopfer, F., Kovsh, A.R., Mikhrin, S.S., Krestnikov, I.L., Livshits, D.A., Ustinov, V.M., Shchukin, V.A., Ledentsov, N.N., Bimberg, D.

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Tilted Wave Lasers: A Way to High Brightness Sources of Light von Shchukin, V, Ledentsov, N, Posilovic, K, Kalosha, V, Kettler, T, Seidlitz, D, Winterfeldt, M, Bimberg, D, Gordeev, N Y, Karachinsky, L Y, Novikov, I I, Shernyakov, Y M, Chunareva, A V, Maximov, M V, Bugge, F, Weyers, M

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High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide von Maximov, M.V., Shernyakov, Y.M., Novikov, I.I., Karachinsky, L.Ya, Gordeev, N.Yu, Ben-Ami, U., Bortman-Arbiv, D., Sharon, A., Shchukin, V.A., Ledentsov, N.N., Kettler, T., Posilovic, K., Bimberg, D.

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Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots von Blokhin, S.A., Maleev, N.A., Kuzmenkov, A.G., Sakharov, A.V., Kulagina, M.M., Shernyakov, Y.M., Novikov, I.I., Maximov, M.V., Ustinov, V.M., Kovsh, A.R., Mikhrin, S.S., Ledentsov, N.N., Lin, G., Chi, J.Y.

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35 GHz mode-locking of 1.3μm quantum dot lasers von Kuntz, M., Fiol, G., Lämmlin, M., Bimberg, D., Thompson, M. G., Tan, K. T., Marinelli, C., Penty, R. V., White, I. H., Ustinov, V. M., Zhukov, A. E., Shernyakov, Yu. M., Kovsh, A. R.

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InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain von Kovsh, A.R., Maleev, N.A., Zhukov, A.E., Mikhrin, S.S., Vasil’ev, A.P., Semenova, E.A., Shernyakov, Yu.M., Maximov, M.V., Livshits, D.A., Ustinov, V.M., Ledentsov, N.N., Bimberg, D., Alferov, Zh.I.

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InAs/InGaAs/GaAs quantum dot lasers of 1.3 mu m range with high (88%) differential efficiency von Kovsh, A R, Maleev, N A, Zhukov, A E, Mikhrin, S S, Vasil'ev, A P, Shernyakov, Yu M, Maximov, M V, Livshits, D A, Ustinov, V M, Alferov, Zh I, Ledentsov, N N, Bimberg, D

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InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition von MAXIMOV, M. V, KOCHNEV, I. V, LEDENTSOV, N. N, BIMBERG, D, KOSOGOV, A. O, WERNER, P, GÖSELE, U, SHERNYAKOV, Y. M, ZAITSEV, S. V, GORDEEV, N. YU, TSATSUL'NIKOV, A. F, SAKHAROV, A. V, KRESTNIKOV, I. L, KOP'EV, P. S, ALFEROV, Z. I

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High-power edge-emitting laser diode with narrow vertical beam divergence von Ledentsov, N N, Shchukin, V A, Novikov, I I, Gordeev, N Yu, Maximov, M V, Shernyakov, Y M, Pausov, A S, Posilovic, K, Kettler, T, Bimberg, D, Bugge, F, Weyers, M

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InGaAs-GaAs quantum dots for application in long wavelength (1.3 µm) resonant vertical cavity enhanced devices von Maximov, M. V., Krestnikov, I. L., Shernyakov, Y. M., Zhukov, A. E., Maleev, N. A., Musikhin, Y. G., Ustinov, V. M., Alferov, Zh. I., Chernyshov, A. Y., Ledentsov, N. N., Bimberg, D., Maka, T., Torres, C. M. Sotomayor

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Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept von Blokhin, S.A., Karachinsky, L.Ya, Novikov, I.I., Gordeev, N.Yu, Sakharov, A.V., Maleev, N.A., Kuzmenkov, A.G., Shernyakov, Y.M., Maximov, M.V., Kovsh, A.R., Mikhrin, S.S., Shchukin, V.A., Ledentsov, N.N., Ustinov, V.M., Bimberg, D.

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Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate von Zhukov, A.E., Kovsh, A.R., Ustinov, V.M., Shernyakov, Yu.M., Mikhrin, S.S., Maleev, N.A., Kondrat'eva, E.Yu, Livshits, D.A., Maximov, M.V., Volovik, B.V., Bedarev, D.A., Musikhin, Yu.G., Ledentsov, N.N., Kop'ev, P.S., Alferov, Z.I., Bimberg, D.

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Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates von Zhukov, A. E., Kovsh, A. R., Maleev, N. A., Mikhrin, S. S., Ustinov, V. M., Tsatsul’nikov, A. F., Maximov, M. V., Volovik, B. V., Bedarev, D. A., Shernyakov, Yu. M., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D.

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Spectrotemporal response of 1.3 μm quantum-dot lasers von Kuntz, M., Ledentsov, N. N., Bimberg, D., Kovsh, A. R., Ustinov, V. M., Zhukov, A. E., Shernyakov, Yu. M.

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Injection lasers based on InGaAs quantum dots in an AlGaAs matrix von Zhukov, A. E., Ustinov, V. M., Egorov, A. Yu, Kovsh, A. R., Tsatsul’nikov, A. F., Maximov, M. V., Ledentsov, N. N., Zaitsev, S. V., Gordeev, N. Yu, Kopchatov, V. I., Shernyakov, Y. M., Kop’ev, P. S., Bimberg, D., Alferov, Zh. I.

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Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation von Maximov, M.V., Asryan, L.V., Shernyakov, Yu.M., Tsatsul'nikov, A.F., Kaiander, I.N., Nikolaev, V.V., Kovsh, A.R., Mikhrin, S.S., Ustinov, V.M., Zhukov, A.E., Alferov, Z.I., Ledenstou, N.N., Bimberg, D.

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