Phase separation in SiOx films annealed under enhanced hydrostatic pressure von Rudko, G. Yu, Maidanchuk, I. Yu, Indutnyy, I. Z., Misiuk, A., Gule, E. G., Shepeliavyi, P. E.

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Polarized photoluminescence of nc-Si–SiO x nanostructures von Michailovska, E. V., Indutnyi, I. Z., Shepeliavyi, P. E., Sopinskii, N. V.

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Raman spectra of Ag- and Cu-photo-doped As40S60-xSex films von STRONSKI, A. V, VLCEK, M, STETSUN, A. I, SKLENAR, A, SHEPELIAVYI, P. E

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VISIBLE PHOTOLUMINESCENCE FROM ANNEALED POROUS SiOx FILMS von Indutnyy, I Z, Maidanchuk, I Yu, Min'ko, V I, Shepeliavyi, P E, Dan'ko, V A

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APPLICATION OF AMORPHOUS CHALCOGENIDE FILMS FOR RECORDING OF HIGH-FREQUENCY PHASE-RELIEF DIFFRACTION GRATINGS von Min'ko, V I, Indutnyy, I Z, Shepeliavyi, P E, Litvin, P M

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Structural transformations and silicon nanocrystallite formation in SiOx films von Bratus’, V. Ya, Yukhimchuk, V. A., Berezhinsky, L. I., Valakh, M. Ya, Vorona, I. P., Indutnyi, I. Z., Petrenko, T. T., Shepeliavyi, P. E., Yanchuk, I. B.

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Effect of Si nanoparticles embedded in SiOx on optical properties of the films studied by spectroscopic ellipsometry and photoluminescence spectroscopy von Szekeres, A., Nikolova, T., Paneva, A., Lisovskyy, I., Shepeliavyi, P.E., Rudko, G.Yu

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Fabrication of submicrometer periodic structures using Interference lithography and two-layer chalcogenide photoresist von Indutnyi, I Z, Popescu, M, Lorinczi, A, Sava, F, Mn'ko, V I, Shepeliavyi, P E, Dan'ko, V A

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Interference lithography using chalcogenide inorganic photoresist von Indutnyy, I Z, Popescv, M, Lorin, A, Sava, F, Minko, V I, Shepeliavyi, P E

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Polarized photoluminescence of nc-Si–SiO{sub x} nanostructures von Michailovska, E. V., Indutnyi, I. Z., Shepeliavyi, P. E., Sopinskii, N. V.

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Polarized photoluminescence of nc-Si–SiOx nanostructures von Michailovska, E. V., Indutnyi, I. Z., Shepeliavyi, P. E., Sopinskii, N. V.

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Investigation of thermal sensitivity and radiation resistance of SiOx〈Ti〉 metal-dielectric films von Shepeliavyi, P.E., Indutnyi, I.Z., Dan’ko, V.A., Neimash, V.B., Povarchuk, V.Yu

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Investigation of thermal sensitivity and radiation resistance of SiOx metal-dielectric films von Shepeliavyi, P E, Indutnyi, I Z, Dan'ko, V A, Neimash, V B, Povarchuk, VYu

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Efficient SERS substrates based on laterally ordered gold nanostructures made using interference lithography von Hreshchuk, O.M., Yukhymchuk, V.O.

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Nanostructured Au Chips with Enhanced Sensitivity for Sensors Based on Surface Plasmon Resonance von Indutnyi, I.Z., Ushenin, Yu.V., Myn'ko, V.I., Shepeliavyi, P.E., Lukaniuk, M.V., Korchovyi, A.A., Khrystosenko, R.V.

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Polarization memory of photoluminescence related with Si nanoparticles embedded into oxide matrix von Michailovska, K. V.

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Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device von Chegel, V. I.

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Mechanism of Tin-Induced Crystallization in Amorphous Silicon von Neimash, V.B., Goushcha, A.O., Shepeliavyi, P.E., Yukhymchuk, V.O., Dan’ko, V.A., Melnyk, V.V., Kuzmich, A.G.

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Nickel-induced enhancement of photoluminescence in nc-Si-SiOx nanostructures von Michailovska, K.V.

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Ellipsometric characterization of SiOx films with embedded Si nanoparticles von Szekeres, A., Vlaikova, E., Lohner, T., Petrik, P., Huhn, G., Havancsak, K., Lisovskyy, I., Zlobin, S., Indutnyy, I.Z., Shepeliavyi, P.E.

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