54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF von Stepniak, G, Lewandowski, A, Kropp, J.R, Ledentsov, N.N, Shchukin, V.A, Ledentsov, N, Schaefer, G, Agustin, M, Turkiewicz, J.P

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20 Gb/s 85 ^C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots von Hopfer, F., Mutig, A., Fiol, G., Kuntz, M., Shchukin, V.A., Haisler, V.A., Warming, T., Stock, E., Mikhrin, S.S., Krestnikov, I.L., Livshits, D.A., Kovsh, A.R., Bornholdt, C., Lenz, A., Eisele, H., Dahne, M., Ledentsov, N.N., Bimberg, D.

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Temperature-Dependent Small-Signal Analysis of High-Speed High-Temperature Stable 980-nm VCSELs von Mutig, A., Fiol, G., Potschke, K., Moser, P., Arsenijevic, D., Shchukin, V.A., Ledentsov, N.N., Mikhrin, S.S., Krestnikov, I.L., Livshits, D.A., Kovsh, A.R., Hopfer, F., Bimberg, D.

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High-Power Low-Beam Divergence Edge-Emitting Semiconductor Lasers with 1- and 2-D Photonic Bandgap Crystal Waveguide von Maximov, M.V., Shernyakov, Y.M., Novikov, I.I., Karachinsky, L.Ya, Gordeev, N.Yu, Ben-Ami, U., Bortman-Arbiv, D., Sharon, A., Shchukin, V.A., Ledentsov, N.N., Kettler, T., Posilovic, K., Bimberg, D.

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MBE-grown metamorphic lasers for applications at telecom wavelengths von Ledentsov, N.N., Shchukin, V.A., Kettler, T., Posilovic, K., Bimberg, D., Karachinsky, L.Ya, Gladyshev, A.Yu, Maximov, M.V., Novikov, I.I., Shernyakov, Yu.M., Zhukov, A.E., Ustinov, V.M., Kovsh, A.R.

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High-Brightness and Ultranarrow-Beam 850-nm GaAs/AlGaAs Photonic Band Crystal Lasers and Single-Mode Arrays von Kettler, T., Posilovic, K., Karachinsky, L.Ya, Ressel, P., Ginolas, A., Fricke, J., Pohl, U.W., Shchukin, V.A., Ledentsov, N.N., Bimberg, D., Jonsson, J., Weyers, M., Erbert, G., Trankle, G.

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High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence von Maximov, M.V., Shernyakov, Y.M., Novikov, I.I., Kuznetsov, S.M., Karachinsky, L.Ya, Gordeev, N.Yu, Kalosha, V.P., Shchukin, V.A., Ledentsov, N.N.

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Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s von Blokhin, S.A., Lott, J.A., Mutig, A., Fiol, G., Ledentsov, N.N., Maximov, M.V., Nadtochiy, A.M., Shchukin, V.A., Bimberg, D.

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Narrow vertical beam divergence laser diode based on longitudinal photonic band crystal waveguide von Maximov, M.V., Shernyakov, Yu.M., Novikov, I.I., Shchukin, V.A., Shamid, I., Ledentsov, N.N.

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Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C von Ledentsov, N., Agustin, M., Shchukin, V.A., Kropp, J.-R., Ledentsov, N.N., Chorchos, Ł., Turkiewicz, J.P., Khan, Z., Cheng, C.-L., Shi, J.W., Cherkashin, N.

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Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept von Blokhin, S.A., Karachinsky, L.Ya, Novikov, I.I., Gordeev, N.Yu, Sakharov, A.V., Maleev, N.A., Kuzmenkov, A.G., Shernyakov, Y.M., Maximov, M.V., Kovsh, A.R., Mikhrin, S.S., Shchukin, V.A., Ledentsov, N.N., Ustinov, V.M., Bimberg, D.

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(In,Ga,Al)P-GaP laser diodes grown on high-index GaAs surfaces emitting in the green, yellow and bright red spectral range von Ledentsov, N N, Shchukin, V A, Shernyakov, Yu M, Kulagina, M M, Payusov, A S, Gordeev, N Yu, Maximov, M V, Cherkashin, N A

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Room temperature yellow InGaAlP quantum dot laser von Ledentsov, N.N., Shchukin, V.A., Shernyakov, Yu. M., Kulagina, M.M., Payusov, A.S., Gordeev, N. Yu, Maximov, M.V., Zhukov, A.E., Karachinsky, L. Ya, Denneulin, T., Cherkashin, N.

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Passive cavity surface emitting laser von LOTT, J. A, SHCHUKIN, V. A, LEDENTSOV, N. N, KASTEN, A. M, CHOQUETTE, K. D

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120°C 20 Gbit/s operation of 980 nm VCSEL von MUTIG, A, FIOL, G, HOPFER, F, BIMBERG, D, MOSER, P, ARSENIJEVIC, D, SHCHUKIN, V. A, LEDENTSOV, N. N, MIKHRIN, S. S, KRESTNIKOV, I. L, LIVSHITS, D. A, KOVSH, A. R

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Strain-induced formation and tuning of ordered nanostructures on crystal surfaces von Shchukin, V.A., Ledentsov, N.N., Grundmann, M., Kop'ev, P.S., Bimberg, D.

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Efficient electro-optic semiconductor medium based on type-II heterostructures von Shchukin, V. A., Ledentsov, N. N., Karachinsky, L. Ya, Blokhin, S. A., Novikov, I. I., Bogoslovskiy, N. A., Savelyev, A. V.

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10.7 W peak power picosecond pulses from high-brightness photonic band crystal laser diode von RIECKE, S, POSILOVIC, K, KETTLER, T, SEIDLITZ, D, SHCHUKIN, V. A, LEDENTSOV, N. N, LAURITSEN, K, BIMBERG, D

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High-frequency electrical properties of a vertical-cavity surface-emitting laser with a monolithically integrated electro-optical modulator von Nadtochiy, A. M., Hofmann, W., Germann, T. D., Blokhin, S. A., Karachinskiy, L. Ya, Maximov, M. V., Shchukin, V. A., Zhukov, A. E., Bimberg, D.

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Strain-driven self-organization of nanostructures on semiconductor surfaces von Shchukin, V.A., Bimberg, D.

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