Well-barrier hole burning in quantum well lasers von Rideout, W., Sharfin, W.F., Koteles, E.S., Vassell, M.O., Elman, B.

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Femtojoule optical switching in nonlinear semiconductor laser amplifiers von SHARFIN, W. F, DAGENAIS, M

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High contrast, 1.3 μm optical AND gate with gain von SHARFIN, W. F, DAGENAIS, M

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Observation of mode beating and self-frequency locking in a nearly single-mode semiconductor laser von Sharfin, W.F., Schlafer, J., Koteles, E.S.

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Cavityless optical bistability due to light-induced absorption in cadmium sulfide von DAGENAIS, M, SHARFIN, W. F

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Measurement of the damping dispersion of exciton polaritons in CdS von DAGENAIS, M, SHARFIN, W. F

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Linear- and nonlinear-optical properties of free and bound excitons in CdS and applications in bistable devices von DAGENAIS, M, SHARFIN, W. F

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Picojoule, subnanosecond, all-optical switching using bound excitons in CdS von DAGENAIS, M, SHARFIN, W. F

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Anomalously high damping in strained InGaAs-GaAs single quantum well lasers von Sharfin, W.F., Schlafer, J., Rideout, W., Elman, B., Lauer, R.B., LaCourse, J., Crawford, F.D.

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Effect of Auger recombination and differential gain on the temperature sensitivity of 1.5 μm quantum well lasers von ZOU, Y, OSINSKI, J. S, GRODZINSKI, P, DAPKUS, P. D, RIDEOUT, W, SHARFIN, W. F, CRAWFORD, F. D

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Small-signal predictions of the well-barrier hole burning model on quantum-well laser dynamics von VASSELL, M. O, SHARFIN, W. F, RIDEOUT, W, LEE, J

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Dynamics of optically switched bistable diode laser amplifiers von Sharfin, W., Dagenais, M.

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Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasers von Zou, Y., Osinski, J.S., Grodzinski, P., Dapkus, P.D., Rideout, W.C., Sharfin, W.F., Schlafer, J., Crawford, F.D.

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Room-temperature optical bistability in InGaAsP/InP amplifiers and implications for passive devices von Sharfin, W. F., Dagenais, M.

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Competing effects of well-barrier hole burning and nonlinear gain on the resonance characteristics of quantum-well lasers von Vassell, M.O., Sharfin, W.F., Rideout, W.C., Lee, J.

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Generation of new bound exciton lines by lithium implantation of CdS von DAGENAIS, M, ELMAN, B. S, SHARFIN, W. F

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Lateral-mode selectivity in external-cavity diode lasers with residual facet reflectivity von Sharfin, W.F., Mooradian, A., Harding, C.M., Waters, R.G.

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High-power, diffraction-limited, narrow-band, external-cavity diode laser von SHARFIN, W. F, SEPPALA, J, MOORADIAN, A, SOLTZ, B. A, WATERS, R. G, VOLLMER, B. J, BYSTROM, K. J

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Intracavity optical bistability due to thermally induced changes in absorption and refraction von Dagenais, M., Surkis, A., Sharfin, W., Winful, H.

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Optical switching of semiconductor laser amplifiers von Sharfin, W. F., Dagenais, M.

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