Glutamate sensing with enzyme-modified floating-gate field effect transistors von Braeken, D., Rand, D.R., Andrei, A., Huys, R., Spira, M.E., Yitzchaik, S., Shappir, J., Borghs, G., Callewaert, G., Bartic, C.

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Dielectric relaxation and porosity determination of porous silicon von Axelrod, E, Givant, A, Shappir, J, Feldman, Y, Sa'ar, A

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Infrared photo-induced absorption spectroscopy of porous silicon von Krapf, D., Davidi, A., Shappir, J., Sa'ar, A.

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Infrared multispectral detection using Si/SixGe1−x quantum well infrared photodetectors von Krapf, D., Adoram, B., Shappir, J., Sa’ar, A., Thomas, S. G., Liu, J. L., Wang, K. L.

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Pyramid-shaped silicon photodetector with subwavelength aperture [for NSOM] von Chelly, R.A., Cohen, Y., Sa'ar, A., Shappir, J.

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Reversible transition of extracellular field potential recordings to intracellular recordings of action potentials generated by neurons grown on transistors von Cohen, Ariel, Shappir, Joseph, Yitzchaik, Shlomo, Spira, Micha E.

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Photoluminescence anisotropy from laterally anodized porous silicon von Givant, A., Shappir, J., Sa’ar, A.

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Trap generation and occupation dynamics in SiO2 under charge injection stress von NISSAN-COHEN, Y, SHAPPIR, J, FROHMAN-BENTCHKOWSKY, D

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Porous Silicon on Insulator: A New Approach to Fabricate Porous Silicon Based Optoelectronic Devices von Givant, A., Shappir, J., Sa'ar, A.

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A model for silicon-oxide breakdown under high field and current stress von AVNI, E, SHAPPIR, J

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Depletion type floating gate p-channel MOS transistor for recording action potentials generated by cultured neurons von Cohen, Ariel, Spira, Micha E, Yitshaik, Shlomo, Borghs, Gustaaf, Shwartzglass, Ofer, Shappir, Joseph

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Dynamic model of trapping-detrapping in SiO2 von NISSAN-COHEN, Y, SHAPPIR, J, FROHMAN-BENTCHKOWSKY, D

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High-field and current-induced positive charge in thermal SiO2 layers von NISSAN-COHEN, Y, SHAPPIR, J, FROHMAN-BENTCHKOWSKY, D

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Dielectric relaxation and transport in porous silicon von Axelrod, E., Givant, A., Shappir, J., Feldman, Y., Sa’ar, A.

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Analysis and modeling of floating-gate EEPROM cells von Kolodny, A., Nieh, S.T.K., Eitan, B., Shappir, J.

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Thermal relaxation processes probed by intersubband and inter-valence-band transitions in Si/Si1−xGex multiple quantum wells von Adoram, B., Krapf, D., Shappir, J., Sa’ar, A., Levy, M., Beserman, R., Thomas, S. G., Wang, K. L.

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Glutamate sensing with enzyme-modified floating-gate field effect transistors von Braeken, D, Rand, D.R, Andrei, A, Huys, Rik, Spira, M.E, Yitzchaik, S, Shappir, J, Borghs, Gustaaf, Callewaert, Geert, Bartic, Carmen

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Enhanced electroluminescence in silicon-on-insulator metal–oxide–semiconductor transistors with thin silicon layer von Karsenty, Avi, Sa’ar, Amir, Ben-Yosef, Nissim, Shappir, Joseph

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Modeling of charge-injection effects in metal-oxide-semiconductor structures von AVNI, E, SHAPPIR, J

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Novel interface nitridation process for thin gate oxides von Rahat, I., Shappir, J., Ben-Atar, D.

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