Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping von Xu, Zhiyu, Daeumer, Matthias A., Cho, Minkyu, Yoo, Jae-Hyuck, Detchprohm, Theeradetch, Bakhtiary-Noodeh, Marzieh, Shao, Qinghui, Laurence, Ted A., Key, Daryl, Letts, Edward, Hashimoto, Tadao, Dupuis, Russell D., Shen, Shyh-Chiang

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Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation von Daeumer, Matthias, Yoo, Jae-Hyuck, Xu, Zhiyu, Cho, Minkyu, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Zhang, Yuxuan, Thirupakuzi Vangipuram, Vijay Gopal, Talesara, Vishank, Xu, Yibo, Letts, Edward, Key, Daryl, Li, Tian T., Shao, Qinghui, Dupuis, Russell, Shen, Shyh-Chiang, Lu, Wu, Zhao, Hongping, Hashimoto, Tadao, Laurence, Ted A.

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Design considerations for three-dimensional betavoltaics von Murphy, John W., Voss, Lars F., Frye, Clint D., Shao, Qinghui, Kazkaz, Kareem, Stoyer, Mark A., Henderson, Roger A., Nikolic, Rebecca J.

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System von Shao, Qinghui, Jarrell, Joshua T., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Flicker Noise in Bilayer Graphene Transistors von Qinghui Shao, Guanxiong Liu, Teweldebrhan, D., Balandin, A.A., Rumyantsev, S., Shur, M.S., Dong Yan

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Smooth Bosch Etch for Improved Si Diodes von Voss, Lars F., Qinghui Shao, Conway, Adam M., Reinhardt, Cathy E., Graff, Robert T., Nikolic, Rebecca J.

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Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching von Dowling, Karen M., Chatterjee, Bikramjit, Ghandiparsi, Soroush, Shao, Qinghui, Varley, Joel, Schneider, Joseph D., Chapin, Caitlin, Gottlieb, Miranda S., Leos, Laura, Sword, Michael, Harrison, Sara, Voss, Lars

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Evaluation of Fe-βGa2O3 for Photoconductive Semiconductor Switching von Dowling, Karen M., Chatterjee, Bikramjit, Ghandiparsi, Soroush, Shao, Qinghui, Varley, Joel, Schneider, Joseph D., Chapin, Caitlin, Gottlieb, Miranda S., Leos, Laura, Sword, Michael, Harrison, Sara, Voss, Lars

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Ultradeep electron cyclotron resonance plasma etching of GaN von Harrison, Sara E., Voss, Lars F., Torres, Andrea M., Frye, Clint D., Shao, Qinghui, Nikolić, Rebecca J.

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1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings von Cho, Minkyu, Xu, Zhiyu, Bakhtiary-Noodeh, Marzieh, Detchprohm, Theeradetch, Daeumer, Matthias A., Yoo, Jae-Hyuck, Shao, Qinghui, Laurence, Ted A., Key, Daryl, Hashimoto, Tadao, Letts, Edward, Dupuis, Russell D., Shen, Shyh-Chiang

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Effect of the intermediate layer-core ratio on the morphology and opacity ability of hollow latex particles von Yuan, Teng, Shao, Qinghui, Hu, Jianqing, Wang, Feng, Tu, Weiping

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Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC von Frye, Clint D., Murphy, John W., Shao, Qinghui, Voss, Lars F., Harrison, Sara E., Edgar, James H., Nikolić, Rebecca J.

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Radiation Hardness of Si Compared to 4H-SiC for Betavoltaics Assessed by Accelerated Aging Using an Electron Beam System von Shao, Qinghui, Jarrell, Joshua T., Murphy, John M., Frye, Clint D., Henderson, Roger A., Stoyer, Mark A., Voss, Lars F., Nikolic, Rebecca J.

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Pillar-structured neutron detector based multiplicity system von Murphy, John W., Shao, Qinghui, Voss, Lars F., Kerr, Phil L., Fabris, Lorenzo, Conway, Adam M., Nikolic, Rebecca J.

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Enhanced Laser Damage Threshold in Optically Addressable Light Valves via Aluminum Nitride Photoconductors von Ghandiparsi, Soroush, Chatterjee, Bikram, Shen, Jimmy‐Xuan, Gottlieb, Miranda S., Frye, Clint D., Schneider, Joseph D., Muir, Ryan D., Buckley, Brandon W., Harrison, Sara E., Shao, Qinghui, Varley, Joel B., Voss, Lars F.

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p-i-n High-Speed Photodiodes for X-Ray and Infrared Imagers Fabricated by In Situ-Doped APCVD Germanium Homoepitaxy von Hunt, Charles E., Carpenter, Arthur, Voss, Lars F., Scott, Robin C., Shao, Qinghui, Looker, Quinn, Garafalo, Anne, Mistyuk, Sergey, Durand, Cassandra, Kumar, Ankit, Stroud, Jean-Paul, van Benthem, Klaus

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Pillar-structured neutron detector based multiplicity system von Murphy, John W., Shao, Qinghui, Voss, Lars F., Kerr, Phil L., Fabris, Lorenzo, Conway, Adam M., Nikolic, Rebecca J.

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Hall Effect Characterization of α‐Irradiated p‐Type 4H‐SiC von Frye, Clint D., Murphy, John W., Shao, Qinghui, Voss, Lars F., Harrison, Sara E., Edgar, James H., Nikolić, Rebecca J.

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Experimental determination of gamma-ray discrimination in pillar-structured thermal neutron detectors under high gamma-ray flux von Shao, Qinghui, Conway, Adam M., Voss, Lars F., Radev, Radoslav P., Nikolić, Rebecca J., Dar, Mushtaq A., Cheung, Chin L.

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Analysis and modeling of space radiation effects in quantum dot based nanomaterials for high-efficiency photovoltaic cells von Fedoseyev, A.I., Turowski, M., Raman, A., Balandin, A.A., Qinghui Shao, Hubbard, S., Polly, S., Taylor, E.W.

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