STUDY ON EVALUATION METHOD FOR PROBABILITY OF LEVEE FAILURES DURING LARGE SCALE FLOOD von TABATA, Kosuke, FUKUOKA, Shoji, SEZAKI, Tomoyuki

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STUDY ON EVALUATION METHOD FOR PROBABILITY OF LEVEE FAILURES DURING LARGE SCALE FLOOD von TABATA, Kosuke, FUKUOKA, Shoji, SEZAKI, Tomoyuki

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超過洪水時における堤防破堤確率評価手法に関する研究 von 田端, 幸輔, 福岡, 捷二, 瀬﨑, 智之

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CHANGE OF FLUVIAL SYSTEM CAUSED BY THE CHANNEL WIDENING IN THE KITA RIVER von HATTORI, Atsushi, SEZAKI, Tomoyuki, FUKUSHIMA, Masaki, ITOU, Masahiko, SUETSUGI, Tadashi

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FIELD STUDY ON THE DESTRUCTION PROCESSES OF HERBACEOUS VEGETATION ON GRAVEL BARS DUE TO FLOOD FLOWS von SEZAKI, Tomoyuki, HATTORI, Atsushi, KONDO, Kazuhito, TOKUDA, Makoto, FUJITA, Koh-ichi, YOSHIDA, Masaki

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WATER ENVIRONMENTS IN A STRATIFIED SHALLOW SEA ON A SANDY BEACH IN TOKYO BAY von Uchiyama, Yusuke, Nadaoka, Kazuo, Sezaki, Tomoyuki, Yagi, Hiroshi

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STUDY ON THE FORMATION OF OPENWORK GRAVEL LAYERS AND ITS FILLING-UP MECHANISM WITH MATRICES von Fukushima, Masaki, SUETSUGI, Tadashi, SEZAKI, Tomoyuki

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Change of Vegetation by Flood Disturbance: Case Study of Chikuma River von SUETSUGI, Tadashi, HATTORI, Atsushi, SEZAKI, Tomoyuki

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洪水攪乱に伴う植生の変化: 千曲川を例にとって von 末次, 忠司, 服部, 敦, 瀬崎, 智之

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東京湾奥極浅海域の砂浜海岸周辺における成層期の水環境特性 von 内山, 雄介, 灘岡, 和夫, 瀬崎, 智之, 八木, 宏

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High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications von Van Cuong, Vuong, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Miyazaki, Takamichi, Kuroki, Shin-Ichiro

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Optimized conditions for prediction of intestinal drug permeability using Caco-2 cells von Yamashita, Shinji, Furubayashi, Tomoyuki, Kataoka, Makoto, Sakane, Toshiyasu, Sezaki, Hitoshi, Tokuda, Hideaki

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Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC von Van Cuong, Vuong, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Miyazaki, Takamichi, Kuroki, Shin-Ichiro

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Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC von Muraoka, Kosuke, Ishikawa, Seiji, Sezaki, Hiroshi, Tomonori, Maeda, Yasuno, Satoshi, Koganezawa, Tomoyuki, Kuroki, Shin-Ichiro

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CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC von Van Cuong, Vuong, Miyazaki, Takamichi, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Kuroki, Shin-Ichiro

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Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC von Van Cuong, Vuong, Maeda, Tomonori, Yasuno, Satoshi, Koganezawa, Tomoyuki, Kuroki, Shin Ichiro, Ishikawa, Seiji, Sezaki, Hiroshi

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CF 4 :O 2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC von Van Cuong, Vuong, Miyazaki, Takamichi, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Kuroki, Shin-Ichiro

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INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM von AKAGI, Takuma, IRIE, Bunpei, OHKAWA, Yasuhiro, SEZAKI, Kentaro, HAMAMURA, Tomoyuki

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Information processing apparatus, information processing method, and program von AKAGI, Takuma, IRIE, Bunpei, OHKAWA, Yasuhiro, SEZAKI, Kentaro, HAMAMURA, Tomoyuki

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INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM von AKAGI, Takuma, IRIE, Bunpei, OHKAWA, Yasuhiro, SEZAKI, Kentaro, HAMAMURA, Tomoyuki

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