Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications von Van Cuong, Vuong, Meguro, Tatsuya, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Kuroki, Shin-Ichiro

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High-temperature reliability of Ni/Nb ohmic contacts on 4H-SiC for harsh environment applications von Van Cuong, Vuong, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Miyazaki, Takamichi, Kuroki, Shin-Ichiro

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500 °C high-temperature reliability of Ni/Nb ohmic contact on n-type 4H-SiC von Van Cuong, Vuong, Sato, Tadashi, Miyazaki, Takamichi, Meguro, Tatsuya, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Kuroki, Shin-Ichiro

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Characterization of Ba-Introduced Thin Gate Oxide on 4H-SiC von Maeda, Tomonori, Muraoka, Kosuke, Ishikawa, Seiji, Kuroki, Shin Ichiro, Sezaki, Hiroshi

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Influence of Ni and Nb thickness on low specific contact resistance and high-temperature reliability of ohmic contacts to 4H-SiC von Van Cuong, Vuong, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Miyazaki, Takamichi, Kuroki, Shin-Ichiro

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Thickness dependencies of SiO2/BaOx layers on interfacial properties of a layered gate dielectric on 4H-SiC von Muraoka, Kosuke, Ishikawa, Seiji, Sezaki, Hiroshi, Tomonori, Maeda, Yasuno, Satoshi, Koganezawa, Tomoyuki, Kuroki, Shin-Ichiro

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CF4:O2 surface etching for the improvement of contact resistance and high-temperature reliability in Ni/Nb ohmic contacts on n-type 4H-SiC von Van Cuong, Vuong, Miyazaki, Takamichi, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Yasuno, Satoshi, Koganezawa, Tomoyuki, Kuroki, Shin-Ichiro

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Optimization of Ni/Nb Ratio for High-Temperature-Reliable Ni/Nb Silicide Ohmic Contact on 4H-SiC von Van Cuong, Vuong, Yasuno, Satoshi, Koganezawa, Tomoyuki, Sezaki, Hiroshi, Maeda, Tomonori, Ishikawa, Seiji, Kuroki, Shin Ichiro

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Effects of CF4 Surface Etching on 4H-SiC MOS Capacitors von Sezaki, Hiroshi, Kuroki, Shin Ichiro, Kobayakawa, Kiichi, Ishikawa, Seiji, Muraoka, Kosuke, Maeda, Tomonori

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Suppression of Short-Channel Effects in 4H-SiC Trench MOSFETs von Östling, Mikael, Kuroki, Shin Ichiro, Ohshima, Takeshi, Zetterling, Carl Mikael, Makino, Takahiro, Maeda, Tomonori, Ishii, Tomoyasu, Ishikawa, Seiji, Sezaki, Hiroshi

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4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters von Kuroki, Shin Ichiro, Ohshima, Takeshi, Ishikawa, Seiji, Makino, Takahiro, Sezaki, Hiroshi, Östling, Mikael, Zetterling, Carl Mikael, Inoue, Jun, Maeda, Tomonori

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Low-Parasitic-Capacitance Self-Aligned 4H-SiC nMOSFETs for Harsh Environment Electronics von Kurose, Tatsuya, Kuroki, Shin Ichiro, Ohshima, Takeshi, Ishikawa, Seiji, Makino, Takahiro, Sezaki, Hiroshi, Östling, Mikael, Zetterling, Carl Mikael, Maeda, Tomonori

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Inhibitory activity of blasticidin A, a strong aflatoxin production inhibitor, on protein synthesis of yeast: selective inhibition of aflatoxin production by protein synthesis inhi... von Yoshinari, Tomoya, Noda, Yoichi, Yoda, Koji, Sezaki, Hiroshi, Nagasawa, Hiromichi, Sakuda, Shohei

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4H-SiC pseudo-CMOS logic inverters for harsh environment electronics von Kuroki, S.-I, Kurose, T., Nagatsuma, H., Ishikawa, S., Maeda, T., Sezaki, H., Kikkawa, T., Makino, T., Ohshima, T., Östling, M., Zetterling, C.-M

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Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation von Kuroki, Shin Ichiro, Makino, Takahiro, Ohshima, Takeshi, Ishikawa, Seiji, Zetterling, Carl Mikael, Sezaki, Hiroshi, Kikkawa, Takamaro, Östling, Mikael, Nagatsuma, Hirofumi, De Silva, Wijemuni, Maeda, Tomonori

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Characterization of Grapho-Silicidation on n+ 4H-SiC C-Face for Back Side Ohmic Contacts of Power Devices von De Silva, Milantha, Maeda, Tomonori, Ishikawa, Seiji, Sezaki, Hiroshi, Miyazaki, Takamichi, Kikkawa, Takamaro, Kuroki, Shin-Ichiro

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Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits von Van Cuong, Vuong, Meguro, Tatsuya, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Kuroki, Shin-Ichiro

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Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model von Van Cuong, Vuong, Koyanagi, Kaho, Meguro, Tatsuya, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Kuroki, Shin-Ichiro

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Synthesis of l-cysteine derivatives containing stable sulfur isotopes and application of this synthesis to reactive sulfur metabolome von Ono, Katsuhiko, Jung, Minkyung, Zhang, Tianli, Tsutsuki, Hiroyasu, Sezaki, Hiroshi, Ihara, Hideshi, Wei, Fan-Yan, Tomizawa, Kazuhito, Akaike, Takaaki, Sawa, Tomohiro

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High-temperature reliability of integrated circuit based on 4H-SiC MOSFET with Ni/Nb ohmic contacts for harsh environment applications von Van Cuong, Vuong, Ishikawa, Seiji, Maeda, Tomonori, Sezaki, Hiroshi, Meguro, Tetsuya, Kuroki, Shin-Ichiro

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