Thermal and flow behaviors in heat transportation container using phase change material von Kaizawa, Akihide, Kamano, Hiroomi, Kawai, Atsushi, Jozuka, Tetsuji, Senda, Takeshi, Maruoka, Nobuhiro, Akiyama, Tomohiro

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Thermophysical and heat transfer properties of phase change material candidate for waste heat transportation system von Kaizawa, Akihide, Maruoka, Nobuhiro, Kawai, Atsushi, Kamano, Hiroomi, Jozuka, Tetsuji, Senda, Takeshi, Akiyama, Tomohiro

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Formation of a flavin-linked peptide von Morikawa, Masayuki, Kino, Katsuhito, Senda, Takeshi, Suzuki, Masayo, Kobayashi, Takanobu, Miyazawa, Hiroshi

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Technical Feasibility Study of Waste Heat Transportation System Using Phase Change Material from Industry to City von Kaizawa, Akihide, Kamano, Hiroomi, Kawai, Atsushi, Jozuka, Tetsuji, Senda, Takeshi, Maruoka, Nobuhiro, Okinaka, Noriyuki, Akiyama, Tomohiro

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Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals von Araki, Koji, Maeda, Susumu, Senda, Takeshi, Sudo, Haruo, Saito, Hiroyuki, Izunome, Koji

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Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface von Toyoda, Eiji, Sakai, Akira, Isogai, Hiromichi, Senda, Takeshi, Izunome, Koji, Nakatsuka, Osamu, Ogawa, Masaki, Zaima, Shigeaki

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Strain relaxation of patterned Ge and SiGe layers on Si(0 0 1) substrates von Mochizuki, Shogo, Sakai, Akira, Nakatsuka, Osamu, Kondo, Hiroki, Yukawa, Katsunori, Izunome, Koji, Senda, Takeshi, Toyoda, Eiji, Ogawa, Masaki, Zaima, Shigeaki

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Critical Thickness of Strained Si on SiGe Bulk Virtual Substrate by Low-Pressure Chemical Vapor Deposition von Senda, Takeshi, Igarashi, Masato, Izunome, Koji, Mitani, Shinichi

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Microscopic Structure of Directly Bonded Silicon Substrates von Kikkawa, Jun, Sakai, Akira, Nakatsuka, Osamu, Kimura, Shigeru, Tajiri, Hiroo, Ueda, Takaya, Zaima, Shigeaki, Toyoda, Eiji, Nakamura, Yoshiaki, Isogai, Hiromichi, Ogawa, Masaki, Senda, Takeshi, Izunome, Kouji, Ohara, Yuji, Sakata, Osamu, Kato, Tetsuji

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Crystallinity Investigation of Compositionally Graded SiGe Layers by Synchrotron X-ray Cross-Sectional Diffraction von Senda, Takeshi, Izunome, Koji, Tsusaka, Yoshiyuki, Fukuda, Kazunori, Hayashi, Kazuki, Abe, Maiko, Takahata, Sayuri, Takano, Hidekazu, Kagoshima, Yasushi, Matsui, Junji

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Formation mechanism of the as-grown SiP in CZ-Si crystals with heavily doped phosphorus von Nakamura, Kozo, Senda, Takeshi, Narimatsu, Shingo, maeda, Susumu

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Manufacturing method for semiconductor silicon wafer von Narimatsu, Shingo, Senda, Takeshi

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Strain Analysis of Silicon Surface Layer by Highly-parallel-X-ray Diffraction von Horikawa, Tomoyuki, Senda, Takeshi, Fujimori, Hiroyuki, Tsusaka, Yoshiyuki, Matsui, Junji

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Point defect reaction in the heavily doped n type CZ-Si during crystal growth process von Nakamura, Kozo, Narimatsu, Shingo, Senda, Takeshi, Maeda, Susumu

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MANUFACTURING METHOD FOR SEMICONDUCTOR SILICON WAFER von SENDA, Takeshi, SUDO, Haruo

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MANUFACTURING METHOD FOR SEMICONDUCTOR SILICON WAFER von NARIMATSU, Shingo, SENDA, Takeshi

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MANUFACTURING METHOD FOR SEMICONDUCTOR SILICON WAFER von NARIMATSU, Shingo, SENDA, Takeshi

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Formation behavior of SiP precipitates in CZ-Si crystals with heavily doped phosphorus von Senda, Takeshi, Narimatsu, Shingo, Abe, Yoshiaki, Maeda, Susumu, Matsumura, Hisashi, Isikawa, Takashi, Nakamura, Kozo

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Characterization of the Surface Layer on a Strained Si Wafer by Electrochemical Methods von Sakata, Kaoruho, Kato, Masahiro, Kubo, Nobuhiro, Senda, Takeshi, Izunome, Koji, Homma, Takayuki

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Analysis of Oxygen Precipitation by Highly Parallel X-ray Diffuse Scattering von Horikawa, Tomoyuki, Senda, Takeshi, Matsui, Junji, Tsusaka, Yoshiyuki

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