Growth rates of dry thermal oxidation of 4H-silicon carbide von Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S.

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Electromigration in submicron interconnect features of integrated circuits von Ceric, H., Selberherr, S.

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Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds von Ceric, H., Zahedmanesh, H., Croes, K., Lacerda de Orio, R., Selberherr, S.

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Physically based models of electromigration: From Black’s equation to modern TCAD models von de Orio, R.L., Ceric, H., Selberherr, S.

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Emerging memory technologies: Trends, challenges, and modeling methods von Makarov, A., Sverdlov, V., Selberherr, S.

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The Effect of General Strain on the Band Structure and Electron Mobility of Silicon von Ungersboeck, E., Dhar, S., Karlowatz, G., Sverdlov, V., Kosina, H., Selberherr, S.

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Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide von Šimonka, V., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J.

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Robust magnetic field-free switching of a perpendicularly magnetized free layer for SOT-MRAM von de Orio, R.L., Makarov, A., Selberherr, S., Goes, W., Ender, J., Fiorentini, S., Sverdlov, V.

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Intersubband spin relaxation reduction and spin lifetime enhancement by strain in SOI structures von Ghosh, J., Osintsev, D., Sverdlov, V., Selberherr, S.

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Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory Cell von de Orio, R. L., Ender, J., Fiorentini, S., Goes, W., Selberherr, S., Sverdlov, V.

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Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices von NEDJALKOV, M, KOSINA, H, SELBERHERR, S, RINGHOFER, C, FERRY, D. K

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A review of hydrodynamic and energy-transport models for semiconductor device simulation von Grasser, T., Ting-Wei Tang, Kosina, H., Selberherr, S.

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SIMON-A simulator for single-electron tunnel devices and circuits von Wasshuber, C., Kosina, H., Selberherr, S.

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Decoherence and time reversibility: The role of randomness at interfaces von Sellier, J M, Nedjalkov, M, Dimov, I, Selberherr, S

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Electromigration reliability of open TSV structures von Zisser, W.H., Ceric, H., Weinbub, J., Selberherr, S.

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Wigner equation for general electromagnetic fields: The Weyl-Stratonovich transform von Nedjalkov, M., Weinbub, J., Ballicchia, M., Selberherr, S., Dimov, I., Ferry, D. K.

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Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAM von Fiorentini, S., de Orio, R. L., Selberherr, S., Ender, J., Goes, W., Sverdlov, V.

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Stochastic model of the resistive switching mechanism in bipolar resistive random access memory: Monte Carlo simulations von Makarov, A., Sverdlov, V., Selberherr, S.

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Electron dynamics in nanoscale transistors by means of Wigner and Boltzmann approaches von Sellier, J.M., Amoroso, S.M., Nedjalkov, M., Selberherr, S., Asenov, A., Dimov, I.

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Electromigration failure in a copper dual-damascene structure with a through silicon via von de Orio, R.L., Ceric, H., Selberherr, S.

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