Different behavior of threading edge dislocation conversion during the solution growth of 4H―SiC depending on the Burgers vector von HARADA, Shunta, YAMAMOTO, Yuji, SEKI, Kazuaki, HORIO, Atsushi, TAGAWA, Miho, UJIHARA, Toru

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Solution Growth of 4-Inch Diameter SiC Single Crystal Using Si-Cr Based Solvent von Seki, Kazuaki, Kusunoki, Kazuhiko, Kishida, Yutaka

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Effect of Melt-Back Process on the Quality of Grown Crystal in SiC Solution Growth von Seki, Kazuaki, Kusunoki, Kazuhiko, Kawaguchi, Kotaro

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Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method von Seki, Kazuaki, Harada, Shinsuke, Ujihara, Toru, Kusunoki, Kazuhiko

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High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth von Yamamoto, Yuji, Harada, Shunta, Seki, Kazuaki, Horio, Atsushi, Mitsuhashi, Takato, Ujihara, Toru

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Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent von Kusunoki, Kazuhiko, Kamei, Kazuhito, Seki, Kazuaki, Harada, Shunta, Ujihara, Toru

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Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method von Yamamoto, Yuji, Harada, Shunta, Seki, Kazuaki, Horio, Atsushi, Mitsuhashi, Takato, Koike, Daiki, Tagawa, Miho, Ujihara, Toru

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Development of Solvent Inclusion Free 4H-SiC Off-Axis Wafer Grown by the Top-Seeded Solution Growth Technique von Moriguchi, Koji, Kado, Motohisa, Saito, Hiroaki, Daikoku, Hironori, Shirai, Takayuki, Seki, Kazuaki, Akita, Mitustoshi, Kusunoki, Kazuhiko, Kishida, Yutaka, Kaido, Hiroshi

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Influence of Solution Flow on Step Bunching in Solution Growth of SiC Crystals von Zhu, Can, Harada, Shunta, Seki, Kazuaki, Zhang, Huayu, Niinomi, Hiromasa, Tagawa, Miho, Ujihara, Toru

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Dislocation Behavior in Bulk Crystals Grown by TSSG Method von Moriguchi, Koji, Kado, Motohisa, Seki, Akinori, Saito, Hiroaki, Daikoku, Hironori, Akita, Mitustoshi, Kusunoki, Kazuhiko, Kaido, Hiroshi, Harada, Shunta, Shirai, Takayuki, Seki, Kazuaki, Ujihara, Toru, Kishida, Yutaka

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Polytype-selective growth of SiC by supersaturation control in solution growth von Seki, Kazuaki, Alexander, Kozawa, Shigeta, Harada, Shunta, Ujihara, Toru, Takeda, Yoshikazu

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Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth von Harada, Shunta, Seki, Kazuaki, Ujihara, Toru, Yamamoto, Yuji, Kozawa, Shigeta, Alexander, Alexander

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Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth von Harada, Shunta, Alexander, Seki, Kazuaki, Yamamoto, Yuji, Zhu, Can, Yamamoto, Yuta, Arai, Shigeo, Yamasaki, Jun, Tanaka, Nobuo, Ujihara, Toru

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Evolution of Threading Edge Dislocations at Earlier Stages of PVT Growth for 4H-SiC Single Crystals von Kamei, Kazuhito, Tani, Komomo, Kusunoki, Kazuhiko, Fujimoto, Tatsuo, Seki, Kazuaki, Yano, Takayuki

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Bulk 3C-SiC Crystal by Top Seeded Solution Growth Method von Ujihara, Toru, Harada, Shunta, Seki, Kazuaki

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Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si–Sc–C system von Seki, Kazuaki, Alexander, Kozawa, Shigeta, Ujihara, Toru, Chaudouët, Patrick, Chaussende, Didier, Takeda, Yoshikazu

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Reduction of Threading Screw Dislocation Utilizing Defect Conversion during Solution Growth of 4H-SiC von Yamamoto, Yuji, Harada, Shunta, Seki, Kazuaki, Ujihara, Toru

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Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth von Yamamoto, Yuji, Harada, Shunta, Seki, Kazuaki, Ujihara, Toru, Mitsuhashi, Takato, Horio, Atsushi

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Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth von Harada, Shunta, Seki, Kazuaki, Yamamoto, Yuji, Ujihara, Toru, Kozawa, Shigeta, Alexander, Alexander

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Polytype Stability of 4H-SiC Seed Crystal on Solution Growth von Seki, Kazuaki, Yamamoto, Yuji, Ujihara, Toru, Kozawa, Shigeta, Alexander, Alexander, Takeda, Yoshikazu

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