Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate von Kensaku Motoki, Kensaku Motoki, Takuji Okahisa, Takuji Okahisa, Naoki Matsumoto, Naoki Matsumoto, Masato Matsushima, Masato Matsushima, Hiroya Kimura, Hiroya Kimura, Hitoshi Kasai, Hitoshi Kasai, Kikurou Takemoto, Kikurou Takemoto, Koji Uematsu, Koji Uematsu, Tetsuya Hirano, Tetsuya Hirano, Masahiro Nakayama, Masahiro Nakayama, Seiji Nakahata, Seiji Nakahata, Masaki Ueno, Masaki Ueno, Daijirou Hara, Daijirou Hara, Yoshinao Kumagai, Yoshinao Kumagai, Akinori Koukitu, Akinori Koukitu, Hisashi Seki, Hisashi Seki

Volltext

Growth and characterization of freestanding GaN substrates von Motoki, Kensaku, Okahisa, Takuji, Nakahata, Seiji, Matsumoto, Naoki, Kimura, Hiroya, Kasai, Hitoshi, Takemoto, Kikurou, Uematsu, Koji, Ueno, Masaki, Kumagai, Yoshinao, Koukitu, Akinori, Seki, Hisashi

Volltext

Thermodynamic study on metalorganic vapor-phase epitaxial growth of group III nitrides von KOUKITU, A, TAKAHASHI, N, SEKI, H

Volltext

Thermodynamic analysis on Molecular Beam Epitaxy of GaN, InN and AlN von KOUKITU, A, SEKI, H

Volltext

Thermodynamic Analysis of Hydride Vapor Phase Epitaxy of GaN von Akinori Koukitu, Akinori Koukitu, Shin-ichi Hama, Shin-ichi Hama, Tetsuya Taki, Tetsuya Taki, Hisashi Seki, Hisashi Seki

Volltext

Thermodynamic study on the role of hydrogen during the MOVPE growth of group III nitrides von Koukitu, Akinori, Taki, Tetsuya, Takahashi, Naoyuki, Seki, Hisashi

Volltext

Investigation of Substrate Orientation Dependence for the Growth of GaN on GaAs (111)A and (111)B Surfaces by Metalorganic Hydrogen Chloride Vapor-Phase Epitaxy von Yoshinao Kumagai, Yoshinao Kumagai, Akinori Koukitu, Akinori Koukitu, Hisashi Seki, Hisashi Seki

Volltext

Unstable region of solid composition in ternary nitride alloys grown by metalorganic vapor-phase epitaxy von KOUKITU, A, SEKI, H

Volltext

Growth of Thick Hexagonal GaN Layer on GaAs (111)A Surfaces for Freestanding GaN by Metalorganic Hydrogen Chloride Vapor Phase Epitaxy von Yoshinao Kumagai, Yoshinao Kumagai, Hisashi Murakami, Hisashi Murakami, Akinori Koukitu, Akinori Koukitu, Kikurou Takemoto, Kikurou Takemoto, Hisashi Seki, Hisashi Seki

Volltext

Thermodynamic analysis of the MOVPE growth of InGaAlN quaternary alloy von Koukitu, Akinori, Kumagai, Yoshinao, Seki, Hisashi

Volltext

Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs (1 1 1)A and (1 1 1)B surfaces von Murakami, Hisashi, Kumagai, Yoshinao, Seki, Hisashi, Koukitu, Akinori

Volltext

Thermodynamics on halide vapor-phase epitaxy of InN using incl and InCl3 von KUMAGAI, Yoshinao, TAKEMOTO, Kikurou, KOUKITU, Akinori, SEKI, Hisashi

Volltext

Halogen-Transport Atomic-Layer Epitaxy of Cubic GaN Monitored by In Situ Gravimetric Method von Akinori Koukitu, Akinori Koukitu, Yoshinao Kumagai, Yoshinao Kumagai, Tetsuya Taki, Tetsuya Taki, Hisashi Seki, Hisashi Seki

Volltext

Growth of InN at high temperature by halide vapor phase epitaxy von TAKAHASHI, N, MATSUMOTO, R, KOUKITU, A, SEKI, H

Volltext

Growth of GaN on GaAs(111)B by metalorganic hydrogen chloride VPE using double buffer layer von TAKAHASHI, N, MATSUKI, S, KOUKITU, A, SEKI, H

Volltext

In situ gravimetric monitoring of halogen transport atomic layer epitaxy of cubic-GaN von Kumagai, Yoshinao, Mayumi, Miho, Koukitu, Akinori, Seki, Hisashi

Volltext

Thermodynamics on tri-halide vapor-phase epitaxy of GaN and In Ga1−N using GaCl3 and InCl3 von Kumagai, Yoshinao, Takemoto, Kikurou, Hasegawa, Takahiro, Koukitu, Akinori, Seki, Hisashi

Volltext

In situ observation of halogen-transport atomic layer epitaxy of GaAs in inert carrier gas system von TAKAHASHI, N, YAGI, M, KOUKITU, A, SEKI, H

Volltext

Thermodynamic study on phase separation during MOVPE growth of In Ga1−N von Koukitu, Akinori, Seki, Hisashi

Volltext

In situ monitoring of surface kinetics in GaAs atomic layer epitaxy by surface photo-absorption method von KOUKITU, A, IKEDA, H, SUZUKI, H, SEKI, H

Volltext