Characterization of boron carbon nitride film modified by excimer laser annealing von Aoki, Hidemitsu, Ohyama, Kazutoshi, Sota, Hiroshi, Seino, Toshiaki, Kimura, Chiharu, Sugino, Takashi

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Preparation of High-luminance SrGa 2 S 2 :Eu Thin Film Phosphors by Laser Annealing von Kominami, Hiroko, Nakanishi, Yoichiro, Terada, K., Yamasaki, Takahisa, Seino, Toshiaki, Hara, Kazuhiko

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Uniaxial Strain Effect on TV and Electrical Resistivity in Magnetite (Fe3O4) von Nagasawa, Yasuo, Hara, Ryohei, Seino, Toshiaki, Kosaka, Masashi, Mori, Nobuo, Todo, Sakae, Uwatoko, Yoshiya

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P-226L: Late-News Poster: Development of Technique for High Resolution and Low Temperature Crystallization of SrGa2S4 Thin Film Phosphors for FEDs von Seino, Toshiaki, Arai, Yuko, Ebisawa, Takashi, Kaneda, Yasumasa, Ishida, Toshiyuki, Hayashi, Nobuyuki, Kominami, Hiroko, Hara, Kazuhiko, Nakanishi, Yoichiro

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P-226L: Late-News Poster: Development of Technique for High Resolution and Low Temperature Crystallization of SrGa[sub 2]S[sub 4] Thin Film Phosphors for FEDs von Seino, Toshiaki, Arai, Yuko, Ebisawa, Takashi, Kaneda, Yasumasa, Ishida, Toshiyuki, Hayashi, Nobuyuki, Kominami, Hiroko, Hara, Kazuhiko, Nakanishi, Yoichiro

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Preparation of rare earth doped SrGa_2S_4 thin film phosphors by 355nm laser annealing von YAMASAKI, Takahisa, SEINO, Toshiaki, KOMINAMI, Hiroko, NAKANISHI, Yoichiro, HATANAKA, Yoshinori, HARA, Kazuhiko

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LASER ANNEALING APPARATUS AND LASER ANNEALING METHOD von KOBAYASHI Naoyuki, TOYODA Mitsuhiro, SANO Kazuya, KUDO Toshio, SEINO Toshiaki

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Preparation and CL properties of SrGa_2S_4:Eu thin film phosphors by laser annealing von YAMASAKI, Takahisa, SEINO, Toshiaki, KOMINAMI, Hiroko, NAKANISHI, Yoichiro, HATANAKA, Yoshinori, HARA, Kazuhiko

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Effect of pressure on the electrical resistivity of Ce 3SnC single crystal von Kosaka, Masashi, Seino, Toshiaki, Uwatoko, Yoshiya, Onodera, Hideya, Takeshita, Nao, Môri, Nobuo

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Effect of pressure on the electrical resistivity of Ce3SnC single crystal von Kosaka, Masashi, Seino, Toshiaki, Uwatoko, Yoshiya, Onodera, Hideya, Takeshita, Nao, Môri, Nobuo

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Low temperature preparation of SrGa_2S_4:Eu^<2+> Thin Film Phosphors by laser annealing von TERADA, Kyosuke, YAMASAKI, Takahisa, SEINO, Toshiaki, KOMINAMI, Hiroko, NAKANISHI, Yoichiro, HATANAKA, Yoshinori, HARA, Kazuhiko

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LASER ANNEALING APPARATUS AND LASER ANNEALING METHOD von KUDO TOSHIO, SEINO TOSHIAKI, SANO KAZUYA, KOBAYASHI NAOYUKI, TOYODA MITSUHIRO

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355nmレーザアニールによる希土類添加SrGa_2S_4薄膜蛍光体の作製(発光型/非発光型ディスプレイ合同研究会) von 山崎 貴久, YAMASAKI Takahisa, 清野 俊明, SEINO Toshiaki, 小南 裕子, KOMINAMI Hiroko, 中西 洋一郎, NAKANISHI Yoichiro, 畑中 義式, HATANAKA Yoshinori, 原 和彦, HARA Kazuhiko

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Preparation of High-Luminance SrGa 2 S 4 :Eu Thin Film Phosphors by Laser Annealing von Nakanishi, Yoichiro, Yamasaki, Takahisa, Seino, Toshiaki, Kominami, Hiroko, Hara, Kazuhiko

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レーザアニールによるSrGa_2S_4:Eu薄膜蛍光体の作製と発光特性(発光型/非発光型ディスプレイ) von 山崎 貴久, YAMASAKI Takahisa, 清野 俊明, SEINO Toshiaki, 小南 裕子, KOMINAMI Hiroko, 中西 洋一郎, NAKANISHI Yoichiro, 畑中 義式, HATANAKA Yoshinori, 原 和彦, HARA Kazuhiko

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LASER ANNEALING APPARATUS AND LASER ANNEALING METHOD von KUDO TOSHIO, SEINO TOSHIAKI, SANO KAZUYA, KOBAYASHI NAOYUKI, TOYODA MITSUHIRO

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Method for producing semiconductor having gettering layer, method for manufacturing semiconductor device, and semiconductor device von KOBAYASHI, NAOYUKI, KUDO, TOSHIO, SEINO, TOSHIAKI

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METHOD FOR PRODUCING SEMICONDUCTOR HAVING GETTERING LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE von KUDO TOSHIO, SEINO TOSHIAKI, KOBAYASHI NAOYUKI

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Thermoelectric power measurements of magnetite under high pressure von Kurita, Akio, Seino, Toshiaki, Kosaka, Masashi, Todo, Sakae, Mori, Nobuo

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13aPS-99 Effect of uniaxial pressure on the electrical resistivity of magnetite around the Verwey transition von Hara, Ryohei, Seino, Toshiaki, Kosaka, Masashi, Todo, Sakae, Uwatoko, Yoshiya, Mori, Nobuo

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