Array Architectures for 3-D NAND Flash Memories von Micheloni, Rino, Aritome, Seiichi, Crippa, Luca

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Novel Negative $Vt$ Shift Phenomenon of Program-Inhibit Cell in $\hbox{2}X{-}\hbox{3}X\hbox{-}\hbox{nm}$ Self-Aligned STI nand Flash Memory von Aritome, Seiichi, Seo, Soonok, Kim, Hyung-Seok, Park, Sung-Kye, Lee, Seok-Kiu, Hong, Sungjoo

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Scaling challenge of Self-Aligned STI cell (SA-STI cell) for NAND flash memories von Aritome, Seiichi, Kikkawa, Takamaro

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A New Metal Control Gate Last process (MCGL process) for high performance DC-SF (Dual Control gate with Surrounding Floating gate) 3D NAND flash memory von Yoohyun Noh, Youngsoo Ahn, Hyunseung Yoo, Byeongil Han, Sungjae Chung, Keonsoo Shim, Keunwoo Lee, Sanghyon Kwak, Sungchul Shin, Iksoo Choi, Sanghyuk Nam, Gyuseog Cho, Dongsun Sheen, Seungho Pyi, Jongmoo Choi, Sungkye Park, Jinwoong Kim, Seokkiu Lee, Aritome, S., Sungjoo Hong, Sungwook Park

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Compact Modeling of Negative V Shift Disturb in NAND Flash Memories von Zambelli, Cristian, Andrian, Fabio, Aritome, Seiichi, Olivo, Piero

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Compact Modeling of Negative Shift Disturb in NAND Flash Memories von Zambelli, Cristian, Andrian, Fabio, Aritome, Seiichi, Olivo, Piero

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Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in 2X-3X-nm Self-Aligned STI NAND Flash Memory von ARITOME, Seiichi, SEO, Soonok, KIM, Hyung-Seok, PARK, Sung-Kye, LEE, Seok-Kiu, HONG, Sungjoo

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Advanced DC-SF Cell Technology for 3-D NAND Flash von Aritome, S., Yoohyun Noh, Hyunseung Yoo, Eun Seok Choi, Han Soo Joo, Youngsoo Ahn, Byeongil Han, Sungjae Chung, Keonsoo Shim, Keunwoo Lee, Sanghyon Kwak, Sungchul Shin, Iksoo Choi, Sanghyuk Nam, Gyuseog Cho, Dongsun Sheen, Seungho Pyi, Jongmoo Choi, Sungkye Park, Jinwoong Kim, Seokkiu Lee, Sungjoo Hong, Sungwook Park, Kikkawa, T.

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Novel Negative [Formula Omitted] Shift Phenomenon of Program-Inhibit Cell in [Formula Omitted] Self-Aligned STI nand Flash Memory von Aritome, Seiichi, Seo, Soonok, Kim, Hyung-Seok, Park, Sung-Kye, Lee, Seok-Kiu, Hong, Sungjoo

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Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in hbox 2 X - hbox 3 X hbox - hbox nm Self-Aligned STI nand Flash Memory von Aritome, Seiichi, Seo, Soonok, Kim, Hyung-Seok, Park, Sung-Kye, Lee, Seok-Kiu, Hong, Sungjoo

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A novel three-dimensional dual control-gate with surrounding floating-gate (DC-SF) NAND flash cell von Aritome, Seiichi, Whang, SungJin, Lee, KiHong, Shin, DaeGyu, Kim, BeomYong, Kim, MinSoo, Bin, JinHo, Han, JiHye, Kim, SungJun, Lee, BoMi, Jung, YoungKyun, Cho, SungYoon, Shin, ChangHee, Yoo, HyunSeung, Choi, SangMoo, Hong, Kwon, Park, SungKi, Hong, SungJoo

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NAND Flash Innovations von Aritome, Seiichi

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Program and read trim setting von Aritome, Seiichi

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PROGRAM AND READ TRIM SETTING von Aritome Seiichi

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Program and read trim setting von Aritome Seiichi

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Three dimensional semiconductor memory device with line sharing scheme von Aritome Seiichi

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Semiconductor device von ARITOME SEIICHI

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Highly reliable 26nm 64Gb MLC E2NAND (Embedded-ECC & Enhanced-efficiency) flash memory with MSP (Memory Signal Processing) controller von Hyunyoung Shim, Seaung-Suk Lee, Byungkook Kim, Namjae Lee, Doyoung Kim, Hankyum Kim, Byungkeun Ahn, Youngho Hwang, Hoseok Lee, Jumsoo Kim, Youngbok Lee, Heeyoul Lee, Juyeab Lee, Seungho Chang, Joongseob Yang, Sungkye Park, Aritome, S., Seokkiu Lee, Kun-Ok Ahn, Gihyun Bae, Yeseok Yang

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Stress-induced leakage current of tunnel oxide derived from flash memory read-disturb characteristics von Satoh, S., Hemink, G., Hatakeyama, K., Aritome, S.

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Method for operating non-volatile memory device von ARITOME SEIICHI

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